A 60-GHs hyhrid integrated downconverter intended for use in a mitlimeter-wave radio relay experiment has heen designed and tested. The converter consists of a strip transmission line circuit and two beam-leaded Schot...
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A 60-GHs hyhrid integrated downconverter intended for use in a mitlimeter-wave radio relay experiment has heen designed and tested. The converter consists of a strip transmission line circuit and two beam-leaded Schottky-barrier diodes which are pumped at a subharmonic of the convectional Iocal oscillator frequency. The conversion loss of the circuit is 6.3 dB and the total single-sideband noise figure, including the noise contribution from the IF amplifier, is 9.1 dB. The circuit looks attractive for millimeter-wave communication systems application up to 100 GHz.
A balanced charge-transfer sense amplifier for one-device cell memory arrays is presented. Charge-transfer techniques are used to preamplify the sense signal and to isolate the large bit/sense (B/S) line capacitance f...
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A balanced charge-transfer sense amplifier for one-device cell memory arrays is presented. Charge-transfer techniques are used to preamplify the sense signal and to isolate the large bit/sense (B/S) line capacitance from the nodes of a dynamic latch. The high sensitivity of the sense-refresh amplifier is demonstrated in an experimental memory array with a B/S line to ell storage node capacitance ratio of 40 and a sense signal of about 61 mV. Performance limitations are also discussed.
The paper describes a general three phase load flow program developed for the steady state analysis of any electric transmission network under all possible imbalance conditions such as untransposed EHV lines, single p...
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This paper presents a time domain solution of the specialized transmission line equations found appropriate to characterize multiconductor photon-induced response. The treatment allows generalized N+l conductor transm...
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This paper describes a new random-access memory which achieves a bit density comparable to CCD memories. This memory uses as storage elements single-transistor memory cells which are connected to a common bit line. Th...
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This paper describes a new random-access memory which achieves a bit density comparable to CCD memories. This memory uses as storage elements single-transistor memory cells which are connected to a common bit line. The bit line is implemented with an MOS transmission line, which makes possible an almost lossless charge transport from the single-transistor memory cell to the read/write amplifier. Due to the almost lossless charge transport, the storage capacitance can be reduced and the bit density increased. The expected performance of a 32-kbit memory has been derived.
This paper discusses the application of hybrid microwave integrated circuit technology using open microstrip transmission lines to the realisation of practical receivers operating on the superheterodyne principle at m...
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This paper discusses the application of hybrid microwave integrated circuit technology using open microstrip transmission lines to the realisation of practical receivers operating on the superheterodyne principle at millimetric wavelengths.
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