Sampling techniques as used in wideband oscilloscopes have, in the past, yielded bandwidths up to 4000 MHz. This approach has now been employed to achieve bandwidths in excess of 15 GHz. The design requirements necess...
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Sampling techniques as used in wideband oscilloscopes have, in the past, yielded bandwidths up to 4000 MHz. This approach has now been employed to achieve bandwidths in excess of 15 GHz. The design requirements necessary for this extended bandwidth are presented along with a detailed description of one solution to the design problem. The device is basically a two-diode sampler located at the center of a dielectric filled, biconical cavity containing the RF transmission line. The RF line is perpendicular to the axis of the biconical cavity. The sampling pulse is introduced into the cavity by applying it directly between the centers of the opposite faces of the cavity. This establishes a potential difference between two points on the ground conductor of the RF transmission line being sampled. This technique is basic to the operation of the device and plays a key role in the reduction of sampling loop inductance, which would limit the bandwidth. The equivalent circuits are presented along with the appropriate defining equations. The relationship between bandwidth, input VSWR, and step response overshoot, are presented, along with the typical measured results.
The analysis and synthesis of arbitrarily terminated, lossless, nonuniform transmission lines is approached via a Volterra integral equation formulation which is easily programmed on a digital computer. The theory of ...
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In recent years a great deal of literature has become available on microstrip transmission lines, generated by interest in microwave integrated circuitry. At high frequencies, microstrip on silicone is of interest so ...
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In recent years a great deal of literature has become available on microstrip transmission lines, generated by interest in microwave integrated circuitry. At high frequencies, microstrip on silicone is of interest so that the microwave circuits may be constructed on the same material as the active devices.
The circuit properties of a resonant cavity are effectively described by its loaded Q, unloaded Q, and shunt resistance. One method of Q measurement depends on an accurate knowledge of the variation of VSWR as a funct...
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The circuit properties of a resonant cavity are effectively described by its loaded Q, unloaded Q, and shunt resistance. One method of Q measurement depends on an accurate knowledge of the variation of VSWR as a function of frequency in a transmission line terminated by the resonant cavity. A method of measuring shunt resistance along any path in the cavity entails accurate observation of the resonant-frequency shifts caused by an obstacle placed at points along the path. Therefore, both measurements require an AFC system with good stability and high resolution. The parameters of a re-entrant cavity with apertures are considered and the associated experimental setup is described.
This paper introduces a design method that allows one to find easily an active distributed RC network transfer function whose magnitude approximates the magnitude of a specified lumped low-pass transfer function. The ...
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This paper introduces a design method that allows one to find easily an active distributed RC network transfer function whose magnitude approximates the magnitude of a specified lumped low-pass transfer function. The resulting distributed RC(\overline{RC}) transfer function is a product of simple transfer functions rational in P = \cosh \sqrt{sRC} , each using a different RC product. The overall transfer function is then realized as a cascade of the realizations of the simple transfer functions using a variety of available synthesis techniques. In addition, the characterization of a distributed RC transfer function as a lumped transfer function times a delay factor, as presented herein, permits easy calculation of the transient response of the network. An example of the magnitude approximation is given together with the phase correction made by adding a delay term.
(1) It is pointed out that by the use of a current transformer having a primary to secondary current ratio of the order of 1 to 100, oscillograms can be obtained of the charging current of a single high-tension insula...
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(1) It is pointed out that by the use of a current transformer having a primary to secondary current ratio of the order of 1 to 100, oscillograms can be obtained of the charging current of a single high-tension insulator or of a few feet of high-tension transmission line;that is, oscillograms of currents of the order of 0.1 to 0.5 milliampere may be obtained. (2) The drawings and specification are given for a transformer for this purpose. (3) The transformer relations are discussed;the methods of determining the transformer constants are outlined, and the performance of transformers constructed in accordance with the specifications is determined. (4) A series of oscillograms is given to illustrate some of the applications of the transformer, such as to the study of corona, high-tension insulators, and leakage currents in evacuated lamps. Copyright, 1914 by the AMERICAN INSTITUTE OF ELECTRICAL ENGINEERS
The steady state stability limit of a power system, and adjusted synchronous reactance, are considered in this paper. A graphical solution of the problems of the determination of the steady state power limits is descr...
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The steady state stability limit of a power system, and adjusted synchronous reactance, are considered in this paper. A graphical solution of the problems of the determination of the steady state power limits is described, based directly upon the use of the general circuit constants of the transmission line. COPYRIGHT 1934 by the American Institute of Electrical Engineers.
THE PUMPED TUNNEL DIODE-TRANSISTOR LOGIC (PTDTL) system to be described processes data at a rate of 500-Mc by using a hybrid transistor-tunnel diode circuit which combines the high-speed capabilities of both the trans...
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THE PUMPED TUNNEL DIODE-TRANSISTOR LOGIC (PTDTL) system to be described processes data at a rate of 500-Mc by using a hybrid transistor-tunnel diode circuit which combines the high-speed capabilities of both the transistor and the tunnel diode;
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