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检索条件"主题词=distributed parameter circuits"
3766 条 记 录,以下是3581-3590 订阅
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Oscillations of a High-Voltage Secondary Winding
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Transactions of the American Institute of Electrical Engineers 1946年 第12期65卷 1010-1020页
作者: Boyajian, A. Power transformer engineering division General Electric Company Pittsfield Mass. United States
THE PHYSICAL THEORY of the characteristic oscillations of a high-voltage winding as a primary, that is, when the voltage disturbances are impressed directly across its terminals, is now well known.
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“UNIVER”-A Fast, Versatile Multilogic Digital Amplifier for Micrologic circuits
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Proceedings of the IEEE 1964年 第12期52卷 1591-1598页
作者: Cho, Y. Zimbel, N. MITRE Corporation Bedford Mass. United States
The nature of integrated circuit fabrication limits the number of circuit modules in a system due to the high developmental cost involved. This paper describes a unique approach to designing an ultra-high speed multip... 详细信息
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SLOT-LINE FILTERS AND COUPLERS
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IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES 1970年 第12期MT18卷 1089-&页
作者: MARIANI, EA AGRIOS, JP US Army Communications-Electronics Command AMSEL-KL-EM Fort Monmouth NJ USA
The slot-transmission line on a dielectric substrate has many possible microwave circuit applications. This paper presents experimental data concerning the performance of bandpass and bandstop filters and a hybrid cou... 详细信息
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TRANSMISSION LINE PULSE TRANSFORMERS - THEORY AND APPLICATIONS
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PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS 1968年 第1期56卷 47-&页
作者: MATICK, RE Thomas J. Watson Research Center IBM Corporation Yorktown Heights NY USA
The advent of fast rise-time pulse techniques and their increasing importance brought on by high-speed microminiature circuits and the computer industry has resulted in an increased demand for pulse transformers of va... 详细信息
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The Double-Kelvin Transmission Line and Some Applications
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IEEE Transactions on Circuit Theory 1964年 第3期11卷 372-377页
作者: Googe, J.M. Su, K.L. J. M. Googe is with Mississippi State University State College Miss. United States K. L. Su is with Georgia Institute of Technology Atlanta Ga. United States
The double-Kelvin transmission line is formed when two layers of dielectric and two layers of resistive material of uniform width and thickness are placed on top of a conductive layer. The open-circuit impedance funct... 详细信息
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distributed AMPLIFICATION
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PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS 1948年 第3期36卷 370-370页
作者: GINZTON, EL HEWLETT, WR JASBERG, JH NOE, JD University of Stanford Stanford CA USA Hewlett Packard Company Palo Alto CA USA
This paper presents a new principle in wide-band amplifier design. It is shown that, by an appropriate distribution of ordinary electron tubes along artificial transmission lines, it is possible to obtain amplificatio... 详细信息
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A 2-4 GHz integrated transistor amplifier designed by an optimal-seeking computer program
A 2-4 GHz integrated transistor amplifier designed by an opt...
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IEEE International Conference on Solid-State circuits (ISSCC)
作者: V. Gelnovatch I. Chase T. Arell U. S. Army Electronics Command Fort Monmouth NJ USA
An optimal-seeking computer program to design microwave transistor amplifiers- (DEMON-Diminishing Error Method for Optimization of Networks)- has been written and successfully used to design a multi-stage amplifier op... 详细信息
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PARTIAL DIFFERENTIAL EQUATIONS AND GENERATION OF CONTINUOUSLY EQUIVALENT NETWORKS
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IEEE TRANSACTIONS ON CIRCUIT THEORY 1969年 第3期CT16卷 404-&页
作者: SOBRAL, M Engineering Division University of Michigan Dearborn Mich. 48128 United States
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Design of the First 500-kV Substations on the Southern California Edison Company System
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IEEE Transactions on Power Apparatus and Systems 1967年 第5期PAS-86卷 531-539页
作者: Dolan, Paul R. Peat, A.J. Southern California Edison Company Los Angeles Calif. United States
The design of two new 500-kV substations has been completed and is discussed in this paper. The discussion of the design covers first a description of the 500-kV grid of transmission lines and substations that will se... 详细信息
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A circuit and noise model of the field-effect transistor
A circuit and noise model of the field-effect transistor
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IEEE International Conference on Solid-State circuits (ISSCC)
作者: N. Bechtel Stanford Electronics Laboratory Stanford CA USA
THE FIELD-EFFECT TRANSISTOR may be viewed on a small-signal basis as a RC transmission line with gain from source to drain. A field-effect transistor structure is shown in Figure 1.
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