As a rapidly growing family of 2D transition metal carbides and nitrides, MXenes are recognized as promising materials for the development of future electronics and optoelectronics. So far, the reported patterning met...
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As a rapidly growing family of 2D transition metal carbides and nitrides, MXenes are recognized as promising materials for the development of future electronics and optoelectronics. So far, the reported patterning methods for MXene films lack efficiency, resolution, and compatibility, resulting in limited device integration and performance. Here, a high-performance MXene imagesensor array fabricated by a wafer-scale combination patterning method of an MXene film is reported. This method combines MXene centrifugation, spin-coating, photolithography, and dry-etching and is highly compatible with mainstream semiconductor processing, with a resolution up to 2 mu m, which is at least 100 times higher than other large-area patterning methods reported previously. As a result, a high-density integrated array of 1024-pixel Ti3C2Tx/Si photodetectors with a detectivity of 7.73 x 10(14) Jones and a light-dark current ratio (I-light/I-dark) of 6.22 x 10(6), which is the ultrahigh value among all reported MXene-based photodetectors, is fabricated. This patterning technique paves a way for large-scale high-performance MXetronics compatible with mainstream semiconductor processes.
Hemispherical imagesensors simplify lens designs, reduce optical aberrations, and improve image resolution for compact wide-field-of-view cameras. To achieve hemispherical imagesensors, organic materials are promisi...
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Hemispherical imagesensors simplify lens designs, reduce optical aberrations, and improve image resolution for compact wide-field-of-view cameras. To achieve hemispherical imagesensors, organic materials are promising candidates due to the following advantages: tunability of optoelectronic/spectral response and low-temperature low-cost processes. Here, a photolithographic process is developed to prepare a hemispherical imagesensor array using organic thin film photomemory transistors with a density of 308 pixels per square centimeter. This design includes only one photomemory transistor as a single active pixel, in contrast to the conventional pixel architecture, consisting of select/readout/reset transistors and a photodiode. The organic photomemory transistor, comprising light-sensitive organic semiconductor and charge-trapping dielectric, is able to achieve a linear photoresponse (light intensity range, from 1 to 50 W m(-2)), along with a responsivity as high as 1.6 A W-1 (wavelength = 465 nm) for a dark current of 0.24 A m(-2) (drain voltage = -1.5 V). These observed values represent the best responsivity for similar dark currents among all the reported hemispherical image sensor arrays to date. A transfer method was further developed that does not damage organic materials for hemispherical organic photomemory transistor arrays. These developed techniques are scalable and are amenable for other high-resolution 3D organic semiconductor devices.
A new technique is demonstrated for measurement of modulation transfer function (MTF) on image sensor arrays. Fourier analysis of a low frequency bar target pattern is used to extract MTF at odd harmonics of a target ...
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ISBN:
(纸本)9780819479402
A new technique is demonstrated for measurement of modulation transfer function (MTF) on image sensor arrays. Fourier analysis of a low frequency bar target pattern is used to extract MTF at odd harmonics of a target pattern frequency up to and beyond Nyquist. The technique is particularly useful for linear imagearrays (either conventional linescan or time-delay-integration devices) where conventional slanted-edge technique is not always applicable. The technique is well suited to simple implementation and can provide live presentation of the MTF curve, which helps to ensure optimal alignment conditions are achieved. Detailed analysis of the technique and demonstration of experimental results are presented.
A non-contact jet-printed mask-patterning process is described. By combining digital imaging with jet printing, digital lithography was used to pattern a-Si:H-based electronics on glass and plastic substrates in place...
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A non-contact jet-printed mask-patterning process is described. By combining digital imaging with jet printing, digital lithography was used to pattern a-Si:H-based electronics on glass and plastic substrates in place of conventional photolithography. This digital lithographic process is capable of layer-to-layer registration of +/- 5 mu m using electronic mask files that are directly jet printed onto a surface. A minimum feature size of 50 mu m was used to create 180 x 180 element backplanes having 75-dpi resolution for display and image-sensor applications. By using a secondary mask process, the minimum feature size can be reduced down to similar to 15 mu m for fabrication of short-channel thin-film transistors. The same process was also used to pattern black-matrix wells in fabricating color-filter top plates in LCD panels.
This paper suggests that a planar array of cameras can provide a multidimensional image space which is more structured than conventional images. This simplifies the subsequent analysis using a Hough transform. Possibl...
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This paper suggests that a planar array of cameras can provide a multidimensional image space which is more structured than conventional images. This simplifies the subsequent analysis using a Hough transform. Possible applications and choice of array configuration are discussed, an initial implementation is described and results are presented.
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