In this paper, a kind of high-speed multi-function chip is packaged. Different from the general chip, the chip includes multiple high-speed parts and extremely high-density pins. Based on the package of the chip, a mu...
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ISBN:
(纸本)9781665413916
In this paper, a kind of high-speed multi-function chip is packaged. Different from the general chip, the chip includes multiple high-speed parts and extremely high-density pins. Based on the package of the chip, a multi-dimension codesign method is proposed, which includes chip-package-PCB co-design and electrical/thermal co-design of the package. Ultimately, the packaged chip is tested and it could normally read and write data from the registers at the 25 degrees C ambient temperature, which indicates that the multi-dimension package co-design is feasible for the chip.
This paper presents a 4-element X-band multi-function chip(MFC) based on SiGe technology, which includes RF switches, low noise amplifier, power amplifier driver, attenuator, phase shifter, Power divider and digital b...
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ISBN:
(纸本)9781728151328
This paper presents a 4-element X-band multi-function chip(MFC) based on SiGe technology, which includes RF switches, low noise amplifier, power amplifier driver, attenuator, phase shifter, Power divider and digital beam forming. The traditional MFC is realized by GaAs process, which has the disadvantages of high cost and low integration. This design is based on SiGe process, which greatly reduces the cost of the chip and improves the integration. A series of techniques, such as on-chip temperature compensation, phase compensation and amplifier parallel peaking, arc adopted to achieve better temperature characteristics, smaller attenuation additional phase shift and broadband characteristics. The test results show that the MFC works at 8-12GHz, RMS phase error is less than 3.5 degrees, attenuation additional phase shift is less than 3degrees, the RX gain and TX gain is 10dB and 3dB, respectively. The gain variation is less than 0.019dB/oC. The size of the chip contains pad is about 6mm*9mm.
This paper presents a monolithic microwave integrated circuit multi-function chip with wide operating frequency range of 20 GHz to 32 GHz for a Ka-band phased array antenna in satellite and 5-G applications. This chip...
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ISBN:
(纸本)9788890701887
This paper presents a monolithic microwave integrated circuit multi-function chip with wide operating frequency range of 20 GHz to 32 GHz for a Ka-band phased array antenna in satellite and 5-G applications. This chip implemented using a 0.5-mu m GaAs pHEMT process includes several functional blocks of 6-bit digital phase shifters, 6-bit digital attenuators, amplifiers, and a serial-to-parallel converter for the digital circuit control. The coverage ranges of the phase shifter and attenuator are 360 degrees with a step of 5.625 degrees and 23.625 dB with a step of 0.375 dB, respectively. This chip demonstrates the RMS phase and attenuation errors of 5 degrees and 0.3 dB, respectively, in the frequency range. The chip has a compact size of 3 mm x 3 mm, and exhibits a typical gain of 2 dB.
This article presents a single-chip transceiver frontend GaN MMIC operating at 2-6 GHz with high power handling capacity. The GaN MMIC integrates a power amplifier, a switch and a low-noise amplifier. A simple on-chip...
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ISBN:
(纸本)9781665428194
This article presents a single-chip transceiver frontend GaN MMIC operating at 2-6 GHz with high power handling capacity. The GaN MMIC integrates a power amplifier, a switch and a low-noise amplifier. A simple on-chip tuned inductance solution is proposed considering the resonance caused by the on-chip capacitance and the inductance induced by the bias bond-wire of the power amplifier to enhance wide-band design. To enhance the power capacity and isolation of transceiver, a topology of "one series and two in parallel" is proposed for switch, which shows more than 100W power handling capacity and 40 dB isolation. The transceiver MMIC demonstrated a 39 dBm of output power and a gain greater than 15 dB of the transmitting branch, the power added efficiency is 24-37% in the range of 2-6 GHz, the noise figure of the receiving branch is better than 3dB and the gain is greater than 15 dB over 1.5-5.5 GHz.
An ultra-wideband mixing component cascaded by a mixing multi-function chip and a frequency multiplier multi-function chip was demonstrated and implemented using 3D heterogeneous integration based on the silicon adapt...
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An ultra-wideband mixing component cascaded by a mixing multi-function chip and a frequency multiplier multi-function chip was demonstrated and implemented using 3D heterogeneous integration based on the silicon adapter board *** layers of high-resistance silicon substrate stack packaging are implemented based on the wafer-level gold-gold bonding *** layer adopts though silicon via(TSV)technology to realize signal interconnection.A core monolithic integrated microwave chip(MMIC)is embedded in the silicon cavity,and the silicon-based filter is integrated with the high-resistance silicon *** interconnect line,cavity and filter of the silicon-based adapter board are designed with AutoCAD,and HFSS is adopted for 3D electromagnetic field *** to the measured results,the radio frequency(RF)of the mixing multi-function chip is 40-44 GHz and its intermediate frequency(IF)can cover the Ku band with a chip size of 10 mm×11 mm×1 *** multiplier multi-function chip operates at 16-20 *** fundamental suppression is greater than 50 dB and the second harmonic suppression is better than 40 dB with a chip size of 8 mm×8 mm×1 *** cascaded fully assembled mixing component achieves a spur of better than-50 dBc and a gain of better than 15 dB.
In this paper, an accurate characterization of a fabricated X-band transmit/receive module is described with the process of generating control data to correct amplitude and phase deviations in an active electronically...
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In this paper, an accurate characterization of a fabricated X-band transmit/receive module is described with the process of generating control data to correct amplitude and phase deviations in an active electronically scanned array antenna unit. In the characterization, quantization errors (from both a digitally controlled attenuator and a phase shifter) are considered using not theoretical values (due to discrete sets of amplitude and phase states) but measured values (of which implementation errors are a part). By using the presented procedure for the characterization, each initial control bit of both the attenuator and the phase shifter is closest to the required value for each array element position. In addition, each compensated control bit for the parasitic cross effect between amplitude and phase control is decided using the same procedure. Reduction of the peak sidelobe level of an array antenna is presented as an example to validate the proposed procedure.
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