In this work, we investigate the degradation behavior and mechanism of p-gatealgan/gan high-electron mobility transistors (hemts) for the first time under hydrogen (H2) atmosphere. The experimental results reveal sig...
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In this work, we investigate the degradation behavior and mechanism of p-gatealgan/gan high-electron mobility transistors (hemts) for the first time under hydrogen (H2) atmosphere. The experimental results reveal significant decrease in drain-to-source current, negative drift in threshold voltage, increase in off-state gate leakage current, and deterioration of subthreshold swing in the p-gatealgan/gan HEMT after H2 treatment. The degradation of the electrical parameters is considered to hydrogen poisoning phenomenon. Through secondary ion mass spectrometry and variable temperature photoluminescence spectroscopy, we observe the increase in hydrogen concentration in the p-gan layer and the formation of electrically inactive Mg-H complexes after H2 treatment. As results, the effective hole concentration decreases and the trap density of the device increases, which are confirmed by Hall effect measurement and low-frequency noise analysis, respectively. The detrimental effect of hydrogen on p-gate algan/gan hemts can be attributed primarily to the compensation of Mg doping and the generation of defects.
This work describes two designed and fabricated circuits for power device integration in 650 V e-mode gan-on-Si technology and gives their main measured characteristics. The first circuit is a voltage reference design...
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ISBN:
(纸本)9781665475396
This work describes two designed and fabricated circuits for power device integration in 650 V e-mode gan-on-Si technology and gives their main measured characteristics. The first circuit is a voltage reference designed to compensate process, voltage and temperature (pVT). The advantage of this circuit over state-of-the-art circuits is its performance of regulation, low current consumption and surface required (only 100 mu m x 60 mu m in the first prototype built). The second circuit is a zero-crossing current detector that is also designed to be insensitive to process variations. It exhibits stable static characteristics and bandwidth observed in simulation of more than 10 MHz. The convenience of this circuit is its simplicity because no differential amplifier is used to make a comparison. Both circuits are designed to be integrated with power transistors in gan technology to be used in ACF or other topologies capable of switching at 650 V.
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