检索结果-内蒙古大学图书馆

PV panel modeling with improved parameter extraction technique

SOLAR ENERGY 2017年 153卷 519-530页

作者： Rasool, Fahad Drieberg, Micheal Badruddin, Nasreen Singh, Balbir Mahinder Singh Univ Teknol PETRONAS Dept Elect & Elect Engn Seri Iskandar Malaysia Univ Teknol PETRONAS Dept Fundamental & Appl Sci Seri Iskandar Malaysia

An accurate model of the PV panel is useful to predict its behavior at all operating points for various applications. However, most of the manufacturers provide datasheet values at only open circuit point, short circuit point and maximum power point. Single mechanism five parameters (1M5P) model which contains a series and parallel resistance is presented. The model has five unknown parameters which need to be extracted. In this paper, the parameter extraction technique is improved for accuracy, simplicity and practicability. It requires minimum amount of data from the datasheet and does not require any complex iteration. The accuracy of the model with improved parameter extraction technique (IPET) is firstly validated with datasheet in the controlled irradiation environment. Secondly it is also compared under real-time uncontrolled irradiation environment in order to check the practicability of the model. Finally, the experiment for uncontrolled irradiation environment is carried out on three operating point's i.e. maximum power point and two half power points to verify the accuracy of the model over the wider operating range.. The results of the model with IPET are in good agreement with both datasheet and experimental results with difference of less than 5%. It also shows significant improvement in accuracy when compared to the existing models. (C) 2017 Elsevier Ltd. All rights reserved.

关键词： Solar PV panels Five parameters model parameter extraction technique Datasheet

来源：评论

学校读者我要写书评

暂无评论

Synthesis of Behavioral Models for Circuits With Nonlinearity Less Than Model Error

引用

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS 2023年第6期70卷 2216-2220页

作者： Semyonov, Edward V. Tomsk State Univ Dept Radioelect & Commun Syst Control Syst & Radioelect Tomsk 634050 Russia

A method for the parameter extraction of a nonlinear-dynamical behavioral model is considered. At this method, the model satisfactorily reflects the nonlinear signal distortions, the value of which is less than the model error. As an example, a digitizer was used. It is shown that a model in the form of a third-order nonlinear recursive filter with integrators in the feedbacks is sufficient. The maximum modeling error is 10% and the amplitude of nonlinear distortions is 3-7%. By including the difference between the calculated and measured nonlinear distortion signals in the optimization criteria when extracting of the model parameters, an error of no more than 29% in the representation of the amplitude of nonlinear distortions was achieved at the correct modeling of the distortion waveform. We explain this by the fact that most of the model error relates to the representation of linear dynamical properties. These properties are the same at any level of the test signal and, under the appropriate parameter's extraction, do not affect to the modeling error for the circuit nonlinearity.

关键词： Nonlinear recursive filter baseband pulse signals nonlinear distortion behavioral models parameter extraction technique digital-to-analog converters digitizers

来源：评论

学校读者我要写书评

暂无评论

Compact negative-epsilon stop-band structures based on double-layer chiral inclusions

引用

IET MICROWAVES ANTENNAS & PROPAGATION 2013年第8期7卷 621-629页

作者： Hashemi, Seyed Mohammad Soleimani, Mohammad Tretyakov, Sergei A. Iran Univ Sci & Technol Dept Elect Engn Tehran Iran Aalto Univ Dept Radio Sci & Engn SMARAD CoE FI-00076 Aalto Finland

Here the authors propose to use electrically excited compact chiral resonators in microstrip configurations for realisation of weakly-radiating stop-band transmission lines. The fundamental resonant mode of these resonators can be excited by both electric and magnetic fields applied parallel to the spiral axis. The authors propose to use a racemic arrangement of an equal amount of left-and right-handed chiral particles between the ground plane and the signal strip and orient the particles so that they are excited by the electric field of the microstrip line. The advantage of this configuration (in addition to strong coupling and weak radiation from excited particles) is that the ground plane can be preserved from being etched (continuous ground structure). The other advantage is that the size of negative permittivity lines loaded with chiral particles can be made very small compared to previous implementations based on complementary split-ring resonators. The circuit models with properly extracted parameters accurately describe the behaviour of both negative permittivity and double-negative lines loaded with electrically coupled resonators. This parameter extraction technique is based on the comparison between the simulated (or measured) transmission and reflection characteristics of the host line loaded with such resonators and those obtained from its lumped-element equivalent circuit model.

关键词： chirowaveguides electric fields magnetic fields microstrip resonators resonators parameter extraction technique metamaterial transmission lines circuit models splitring resonators spiral axis electric fields magnetic fields stop band transmission lines microstrip configurations compact chiral resonators double layer chiral inclusions negative epsilon stop band structures

来源：评论

学校读者我要写书评

暂无评论

A new modeling and parameter extraction technique for uni-directional high-voltage MOS devices 5

A new modeling and parameter extraction technique for uni-di...

引用

5th International Conference on ASIC

作者： Na, C Rui, W Zheng, GX Fudan Univ Dept Mat Sci Shanghai 200433 Peoples R China

ISBN: (纸本)078037889X

In this paper, a new method of modeling uni-directional HV MOS device based on the common BSIM3V3 model is presented. We propose to assign physical meainngs and values of three model parameters different from the original BSIM3V3 model [1] but not change any equation of it to model the characteristics of uni-directional HV MOS devices. The way of accurately parameters extraction is given later. At last we will show the simulation results using the proposed model, which fit the measured results very well proving the effectiveness of this method.

关键词： MOS integrated circuits integrated circuit modelling circuit simulation parameter estimation parameter extraction technique unidirectional high-voltage MOS device BSIM3V3 model model parameters modeling

来源：评论

学校读者我要写书评

暂无评论

A Novel Approach to Compact Model parameter extraction for Excimer Laser Annealed Complementary Thin Film Transistors

引用

JOURNAL OF COMPUTATIONAL ELECTRONICS 2004年第3-4期3卷 257-261页

作者： Li, Yiming Yu, Shao-Ming Natl Chiao Tung Univ Dept Commun Engn Hsinchu 300 Taiwan Natl Chiao Tung Univ Microelect & Informat Syst Res Ctr Hsinchu 300 Taiwan Natl Chiao Tung Univ Dept Comp & Informat Sci Hsinchu 300 Taiwan

A unified physical-based model parameter extraction technique for excimer laser annealed lower temperature polycrystalline silicon (LTPS) complementary thin film transistors (TFTs) is for the first time proposed. For two well-known compact models of LTPS TFT, Rensselaer Polytechnic Institute (RPI) V1 and V2 models, our approach sequentially optimizes the model parameters in the regions of linear, subthreshold, saturation, and leakage. Compared with the measured results, the extracted I-D - V-G, I-D - V-D, transconductance, and output conductance are within 3% of accuracy. The agreement with the experimental data is excellent for the n- and p-type LTPS TFTs with different length and width. This extraction technique bridges the fabrication of LTPS TFTs and the design of complementary system on panel circuits.

关键词： LTPS TFT compact model RPI V1 and V2 models parameter extraction technique optimization

来源：评论

学校读者我要写书评

暂无评论

A new extraction technique for the series resistances of semiconductor devices based on the intrinsic properties of bias-dependent Y-parameters

A new extraction technique for the series resistances of sem...

引用

BIPOLAR/BiCMOS Circuits and Technology Meeting

作者： Cuoco, V Neo, WCE de Vreede, LCN de Graaff, HC Nanver, LK Buisman, K Wu, HC Jos, HFF Burghartz, JN Technol Univ Delft HiTeC Grp NL-2628 CT Delft Netherlands

ISBN: (纸本)0780386183

This paper presents an approach for the extraction of the series parasitics of semiconductor devices. The approach is based on the inherently different bias dependent behavior of y-parameters for a device with series parasitics compared to a device without series parasitics. The principles of this new method are verified analytically as well in simulations using the ADS' Gummel-Poon model. In conclusion we have applied the proposed extraction method on measured data of DIMES-03 bipolar transistors of different sizes.

关键词： bipolar transistors semiconductor device models electric resistance semiconductor device series parasitic resistance bias-dependent y-parameters parameter extraction technique ADS Gummel-Poon model DIMES-03 bipolar transistors bipolar transistors Semiconductor device models Electrical resistance y-parameters Semiconductor devices Series Resistance parameter extraction series (mathematics)

来源：评论

学校读者我要写书评

暂无评论

A single relaxation-time non-quasi-static model for MESFETs and HEMTs

A single relaxation-time non-quasi-static model for MESFETs ...

引用

9th International Symposim on Microwave and Optical Technology (ISMOT 2003)

作者： Camacho-Peñalosa, C Martín-Guerrero, TM Castillo-Vázquez, B Esteban, J Univ Malaga ETS Ingn Telecomun Dept Ingn Comunicac E-29071 Malaga Spain

ISBN: (纸本)0819453684

A non-quasi-static (NQS) model suitable for simulating the small signal-Performance of monolithic MESFET and HEMT devices, which is consistent with a large-signal model, is described. The hallmark of the model is that it incorporates NQS effects not only in the capacitors of the equivalent circuit, but also in the conductances, employing the same relaxation time in both types of elements. A parameter extraction technique which provides a correct identification of parasitic and intrinsic elements is also presented. The single relaxation-time NQS model has been successfully applied to predict the small-signal performance of monolithic MESFET and HEMT devices in the 1 to 40 GHz band at a wide variety of bias conditions. The close agreement obtained between measured and simulated S-parameters at all bias points validates the proposed model and proves that it represents the main devices' behaviour aspects.

关键词： monolithic MESFET HEMT nonquasi-static model relaxation-time small-signal equivalent circuit parameter extraction technique

来源：评论

学校读者我要写书评

暂无评论

A genetic algorithm approach to InGaP/GaAs HBT parameter extraction and RF characterization

引用

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 2003年第4B期42卷 2371-2374页

作者： Li, YM Cho, YY Wang, CS Huang, KY Natl Nano Device Labs Hsinchu 300 Taiwan Natl Chiao Tung Univ Microelect & Informat Syst Res Ctr Hsinchu 300 Taiwan Natl Chiao Tung Univ Dept Comp & Informat Sci Hsinchu 300 Taiwan Natl Tsing Hua Univ Dept Math Hsinchu 300 Taiwan Natl Chiao Tung Univ Inst Elect Hsinchu 30039 Taiwan

In this paper, a computational intelligence technique is applied to extract and simulate the stationary and high-frequency properties of heterojunction bipolar transistors (HBTs). A set of HBT circuit equations formulated with the Gummel-Poon model in time domain is solved with (1) the waveform relaxation (WR), (2) monotone iterative (MI) method, and (3) genetic algorithm (GA) with floating-point operators. The coupled nonlinear equations are decoupled and solved with the WR and MI methods in time domain, and the results obtained are used for the optimization of the characteristics with the GA method. The iteration can be terminated when the final convergent global solution is obtained. The time domain result is used in analyzing the property of the output third-order intercept point (OIP3) with the fast Fourier transform (FFT). Compared with the SPICE result, our simulation results demonstrate that this method is accurate and stable in high frequency simulation. This approach has practical applications in HBT characterization and radio frequency (RF) circuit optimal design.

关键词： genetic algorithm parameter extraction technique HBT RF two-tone characteristics

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：