Parallel computational techniques have been used to simulate dopant diffusion in Si (e.g. source/drain fabrication of a CMOS transistor) on an ICL distributed array processor (DAP), a single-instructionmultiple-data-...
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Parallel computational techniques have been used to simulate dopant diffusion in Si (e.g. source/drain fabrication of a CMOS transistor) on an ICL distributed array processor (DAP), a single-instruction multiple-data-stream (SIMD) type machine. The finite element and conjugate gradient methods were used for solution. An order of magnitude reduction in computation time has been achieved.
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