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检索条件"主题词=test algorithm"
37 条 记 录,以下是1-10 订阅
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Fault Modeling and test algorithm Development Framework for Gate-All-Around SRAMs
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IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY 2025年 第1期25卷 37-44页
作者: Ghukasyan, Artur Amirkhanyan, Karen Tshagharyan, Grigor Harutyunyan, Gurgen Zorian, Yervant Synopsys Armenia CJSC Yerevan 0038 Armenia Synopsys Inc Sunnyvale CA 94085 USA
With the transition from planar to three-dimensional transistor architectures, many new factors have entered the scene, highlighting the need for thorough investigation of ever-shrinking technology nodes, as well as t... 详细信息
来源: 评论
Development of a test algorithm and Evaluation of the Properties of a Metal-Cladding Additive
Development of a Test Algorithm and Evaluation of the Proper...
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Conference on Intelligent Technologies and Electronic Devices in Vehicle and Road Transport Complex (TIRVED)
作者: Gaidar, S. M. Ershov, V. S. Karelina, M. Yu Akulov, A. A. Russian State Agr Univ Moscow Timiryazev Agr Acad Moscow Russia Moscow Automobile & Rd Construct State Tech Univ Moscow Russia
This article discusses the problems of using compositions to increase the durability of friction units of power plants with the use of metal-cladding additives, as well as through the constant enrichment of engine oil... 详细信息
来源: 评论
Design of combinatorial test algorithm for memory fault diagnosis  8
Design of combinatorial test algorithm for memory fault diag...
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8th International Conference on Instrumentation and Measurement, Computer, Communication and Control (IMCCC)
作者: Zhang Dayu Wang Yue Wang He Zhang Song Jiang Chengzhi China Acad Space Technol Beijing Peoples R China
The memory device used in high reliability field of aerospace needs fast fault diagnosis and location when function failure occurs, but simple function verification test can not even detect failure due to low fault co... 详细信息
来源: 评论
BIST-Based Fault Diagnosis for PCM With Enhanced test Scheme and Fault-Free Region Finding algorithm
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IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS 2020年 第7期28卷 1652-1664页
作者: Xie, Chenchen Li, Xi Lei, Yu Chen, Houpeng Wang, Qian Guo, Jiashu Miao, Jie Lv, Yi Song, Zhitang Chinese Acad Sci Shanghai Inst Microsyst & Informat Technol State Key Lab Funct Mat Informat Shanghai 200050 Peoples R China Univ Chinese Acad Sci Beijing 100049 Peoples R China Shanghai Technol Dev & Entrepreneurship Platform Shanghai 20090 Peoples R China AI SoC Shanghai 20090 Peoples R China
As one of the most promising candidates for nonvolatile memory, phase change memory (PCM) technology has shown great performance advantages in market applications. However, the conventional test methods have not kept ... 详细信息
来源: 评论
Interleaving test algorithm for Subthreshold Leakage-Current Defects in DRAM Considering the Equal Bit Line Stress
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IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS 2014年 第4期22卷 803-812页
作者: Shin, Hyoyoung Park, Youngkyu Lee, Gihwa Park, Jungsik Kang, Sungho Yonsei Univ Dept Elect & Elect Engn Seoul 120749 South Korea Hynix Semicond Inc Mfg Div Gyounggi Do 467701 South Korea
Since the minimum feature size of dynamic RAM has been down-scaled, several studies have been carried out to determine ways to protect cell data from leakage current in many areas. In the field of testing, more approp... 详细信息
来源: 评论
Fault Modeling and test algorithm Creation Strategy for FinFET-Based Memories
Fault Modeling and Test Algorithm Creation Strategy for FinF...
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IEEE 32nd VLSI test SYMPOSIUM (VTS)
作者: Harutyunyan, G. Tshagharyan, G. Vardanian, V. Zorian, Y. Synopsys|c|
FinFET transistors are playing an important role in modern technology that is rapidly growing. Embedded memories based on FinFET transistors lead to new defects that can require new embedded test and repair solution. ... 详细信息
来源: 评论
An SRAM test Quality Improvement Method For Automotive chips  5
An SRAM Test Quality Improvement Method For Automotive chips
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5th IEEE International test Conference in Asia (ITC-Asia)
作者: Xu, Tuanhui Huang, Junlin Bu, Mingen Jiang, Zhe Hisilicon Technol Co LTD Shenzhen Peoples R China
Automotive chips have high requirements on chip test quality. The degree of defects covered by the SRAM test algorithm directly determines the test quality of SRAM. With the evolution of IC manufacturing technology, t... 详细信息
来源: 评论
Fault Modeling and testing of Memristor-Based Spiking Neural Networks
Fault Modeling and Testing of Memristor-Based Spiking Neural...
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IEEE International test Conference (ITC)
作者: Hou, Kuan-Wei Cheng, Hsueh-Hung Tung, Chi Wu, Cheng-Wen Lu, Juin-Ming Natl Tsing Hua Univ Dept Elect Engn Hsinchu Taiwan Ind Technol Res Inst Hsinchu Taiwan
The resistive random-access memory (RRAM), whose core is composed of memristor cell arrays, has recently been proposed for implementing the deep neural network (DNN) and spiking neural network (SNN), which potentially... 详细信息
来源: 评论
A VDD Correction Method for Static Stability test of SRAM Bit Cell
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IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY 2020年 第3期20卷 530-540页
作者: Liu, Yuyan Shi, Zheng Pan, Weiwei Lan, Fan Zhejiang Univ Inst VLSI Design Hangzhou 310027 Peoples R China Semitronix Corp Hangzhou 310012 Peoples R China
SRAM stability is a major concern in nanometer CMOS technologies. As the most important metrics of SRAM static stability, the static characteristics of SRAM are derived by static characteristic curves (read butterfly ... 详细信息
来源: 评论
Method of Alloying Engine Oil with Complex Copper Compounds
Method of Alloying Engine Oil with Complex Copper Compounds
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Conference on Intelligent Technologies and Electronic Devices in Vehicle and Road Transport Complex (TIRVED)
作者: Ershov, V. S. Gaidar, S. M. Karelina, M. Yu Akulov, A. A. Moscow Automobile & Rd Construct State Tech Univ Moscow Russia Russian State Agr Univ Moscow Timiryazev Agr Acad Moscow Russia
This paper presents a method of alloying engine oil with complex copper compounds, which can significantly reduce wear on rubbing surfaces and increase the reliability of the internal combustion engine by transferring... 详细信息
来源: 评论