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检索条件"主题词=test algorithm"
37 条 记 录,以下是11-20 订阅
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A VDD Correction Method for Static Stability test of SRAM Bit Cell
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IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY 2020年 第3期20卷 530-540页
作者: Liu, Yuyan Shi, Zheng Pan, Weiwei Lan, Fan Zhejiang Univ Inst VLSI Design Hangzhou 310027 Peoples R China Semitronix Corp Hangzhou 310012 Peoples R China
SRAM stability is a major concern in nanometer CMOS technologies. As the most important metrics of SRAM static stability, the static characteristics of SRAM are derived by static characteristic curves (read butterfly ... 详细信息
来源: 评论
test-GENERATION AND FAULT-DETECTION FOR VLSI PPL CIRCUITS
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INTEGRATION-THE VLSI JOURNAL 1989年 第3期7卷 303-324页
作者: AMIN, AAM SMITH, KF Department of Computer Science The University of Utah Salt Lake City UT 84112 U.S.A.
This work describes a test generation package developed to utilize the special features of PPL arrays (a structured logic design methodology developed by the VLSI group at the University of Utah) to generate high faul... 详细信息
来源: 评论
test and Repair Methodology for FinFET-Based Memories
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IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY 2015年 第1期15卷 3-9页
作者: Harutyunyan, Gurgen Tshagharyan, Grigor Zorian, Yervant Synopsys Inc Yerevan 0026 Armenia Synopsys Inc Mountain View CA 94043 USA
FinFET transistors are commonly acknowledged as the most promising technology able to play a crucial role to route the development of rapidly growing modern silicon industry. Embedded memories, based on FinFET transis... 详细信息
来源: 评论
Implementation of a BIST scheme for ADC test  5
Implementation of a BIST scheme for ADC test
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5th International Conference on ASIC
作者: Wu, GL Rao, J Ren, AL Ling, M Southeast Univ Natl ASIC Syst Engn Ctr Nanjing 210096 Peoples R China
(I)n this paper, we presented algorithms for testing gain error. offset error. differential nonlinearity (DNL) and integral nonlinearity (INL) of analog-to-digital converters (ADC). and proposed an easily integrated b... 详细信息
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An SRAM test Quality Improvement Method For Automotive chips  5
An SRAM Test Quality Improvement Method For Automotive chips
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5th IEEE International test Conference in Asia (ITC-Asia)
作者: Xu, Tuanhui Huang, Junlin Bu, Mingen Jiang, Zhe Hisilicon Technol Co LTD Shenzhen Peoples R China
Automotive chips have high requirements on chip test quality. The degree of defects covered by the SRAM test algorithm directly determines the test quality of SRAM. With the evolution of IC manufacturing technology, t... 详细信息
来源: 评论
test Solution for Data Retention Faults in Low-Power SRAMs
Test Solution for Data Retention Faults in Low-Power SRAMs
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Design, Automation and test in Europe Conference and Exhibition (DATE)
作者: Zordan, L. B. Bosio, A. Dilillo, L. Girard, P. Todri, A. Virazel, A. Badereddine, N. Univ Montpellier 2 CNRS LIRMM 161 Rue Ada F-34095 Montpellier 5 France Intel Mobile Commun F-06560 Sophia Antipolis France
Low-power SRAMs embed mechanisms for reducing static power consumption. When the SRAM is not accessed during a long period, it switches into an intermediate low-power mode. In this mode, a voltage regulator is used to... 详细信息
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Modeling and test for Parasitic Resistance and Capacitance Defects in PCM
Modeling and Test for Parasitic Resistance and Capacitance D...
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12th Annual Non-Volatile Memory Technology Symposium
作者: Pan, Xiujuan Cui, Xiaole Zha, Jin Lin, Xinnan Lee, Chung Len Peking Univ Shenzhen Grad Sch Key Lab Integrated Microsyst Shenzhen Peoples R China
Parasitic capacitance and resistance have much influence on the performance of the phase change memory (PCM). Based on SPICE circuit simulations, this paper investigates possible faults caused by the parasitic capacit... 详细信息
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试探算法与SSOR预处理共轭梯度算法的拟最佳因子
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高等学校计算数学学报 2007年 第2期29卷 176-185页
作者: 彭小飞 向淑晃 黎稳 华南师范大学数学科学学院 中南大学数学科学与计算技术学院
1引言在求解系数矩阵为对称正定的大型线性代数方程组Au=b (1.1)的迭代法方面,七十年代以来发展了各种预处理共轭梯度法.由于SSOR分裂中具有对称因子,可用于加速共轭梯度法,称为SSOR预处理共轭梯度法(简记为;SSORPCG.同时,由于当松... 详细信息
来源: 评论
testing content addressable memories with physical fault models
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Journal of Semiconductors 2009年 第8期30卷 109-115页
作者: 马麟 杨旭 钟石强 陈云霁 Institute of Computing Technology Chinese Academy of Sciences Graduate University of the Chinese Academy of Sciences
Content addressable memory (CAM) is widely used and its tests mostly use functional fault models. However, functional fault models cannot describe some physical faults exactly. This paper introduces physical fault m... 详细信息
来源: 评论
FAULT-DETECTION IN TFCMOS DFCMOS COMBINATIONAL GATES
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INTEGRATION-THE VLSI JOURNAL 1993年 第2期15卷 201-227页
作者: BUONANNO, G LOMBARDI, F SCIUTO, D SHEN, YN TEXAS A&M UNIV SYST DEPT COMP SCICOLL STNTX 77843
A design for testability technique and an associated test algorithm are presented for CMOS combinational circuits. It will be shown that stuck-open faults, stuck-on faults, bridging faults and delay faults can all be ... 详细信息
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