We find that the number of failing chips per wafer has a probability distribution with a consistent structure across multiple technologies and product types. We further show that a general extreme value provides an ac...
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We find that the number of failing chips per wafer has a probability distribution with a consistent structure across multiple technologies and product types. We further show that a general extreme value provides an accurate and efficient means of describing this distribution. We also show that chips on a wafer tend to fail together, particularly if they are physically close to one another;this behavior results in clusters of failed chips on a wafer. A method for the direct measurement of clusters of failing chips on a wafer is described, along with a model to relate this measurements to the distribution of the number of failing chips. The methods described here are potentially applicable for identifying wafer outliers or for monitoring of the manufacturing process.
Generate borehole by helical milling process may be used effectively since accurate location of the hole may be secured by means of the feed screw graduations. Fiber delamination which is the main defect occurred duri...
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Recently, we reported a direct (non-iterative) algorithm to reconstruct the three-dimensional momentum-space picture of any charged particles collected with a velocity-map imaging system from the two-dimensional proje...
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Recently, we reported a direct (non-iterative) algorithm to reconstruct the three-dimensional momentum-space picture of any charged particles collected with a velocity-map imaging system from the two-dimensional projected image captured by a position-sensitive detector. The method consists of fitting the measured image with an analytical 2D projection of a model 3D velocity distribution defined by the physics of the light-matter interaction. In this work, we present a systematic comparison of the level of performance (accuracy and speed) of our method with others well-known techniques for inverting experimental images.
Ultrasonic microspectroscopy technology was applied to characterization of synthetic silica glasses. Acoustic properties (longitudinal and shear velocities, leaky surface acoustic wave velocity, and density), fictive ...
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Ultrasonic microspectroscopy technology was applied to characterization of synthetic silica glasses. Acoustic properties (longitudinal and shear velocities, leaky surface acoustic wave velocity, and density), fictive temperature T f , chlorine concentration C(Cl), and OH concentration C(OH) were measured, and related relationships among their properties were discussed. The longitudinal velocities in the acoustic properties have the highest sensitivities of 5.93°C/(m/s), -202 wtppm/(m/s), and -31 wtppm/(m/s), with resolutions of 0.6°C, 20 wtppm, and 3.1 wtppm, to T f , C(Cl), and C(OH), respectively. The variations in the acoustic velocities due to T f , C(Cl), and C(OH) are mainly caused by variations in elastic constants, except for shear velocity due to C(OH).
The authors present an application of the success likelihood index methodology (SLIM) for quantifying dynamic scenario-related human actions for use in PRA (probabilistic risk assessment). The application is structure...
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The authors present an application of the success likelihood index methodology (SLIM) for quantifying dynamic scenario-related human actions for use in PRA (probabilistic risk assessment). The application is structured to make the assumptions, bases, and calculations leading to the quantitative evaluation of human error rates under plant transient conditions both scrutable and useful for use in risk management. It provides a structure in which assessment teams of operators and PRA analysts can provide feedback on the problems operators face and a means to prioritize corrective action. The set of forms and instructions to explain and implement the procedure enables its consistent application on a long-term basis and provides the flexibility to update and add actions as additional insight into operator actions is gained.< >
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