A model for estimating the dispersion in the output of a MOS-only, constant inversion level, current reference is presented. Based on such model, a design method is introduced that allows to minimize dispersion for a ...
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ISBN:
(纸本)9781538623114
A model for estimating the dispersion in the output of a MOS-only, constant inversion level, current reference is presented. Based on such model, a design method is introduced that allows to minimize dispersion for a given layout complexity. The method was applied to five different designs producing currents from 2.4 nA to 4.2 nA (@ 300 K) and simulated dispersions with Cadence Spectre ranging from 1.3% to 1.5% (1 sigma) while the model predicted dispersions from 1.2% to 1.4%.
In this paper, a method is proposed to design Luenberger type observer for a class of linear descriptor systems satisfying complete detectability condition. The method is based on the properties of restricted system e...
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ISBN:
(纸本)9781479959013
In this paper, a method is proposed to design Luenberger type observer for a class of linear descriptor systems satisfying complete detectability condition. The method is based on the properties of restricted system equivalent, derived here from a given descriptor system by means of simple matrix theory. Using restricted system equivalent form, equivalence between the detectability of a given descriptor system and that of a normal system has been established. Coefficient matrices of the proposed observer have been synthesized using pole placement technique of normal system theory and LMI approach based on the Lyapunov stability theory.
In this paper we derive spatially dependent transfer functions for web lateral dynamics which provide web lateral position and slope at any location within the web span. This is a significant improvement over existing...
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ISBN:
(纸本)9781538654286
In this paper we derive spatially dependent transfer functions for web lateral dynamics which provide web lateral position and slope at any location within the web span. This is a significant improvement over existing lateral transfer functions which provide the web lateral response only on the rollers. Our approach relies on taking the Laplace transform with respect to the temporal variable of both the web span lateral governing equation and the normal entry boundary conditions on the rollers, and solving the resulting equations. A general web span lateral transfer function, which is an explicit function of the spatial position along the span, is obtained. The new governing equations provide mechanisms to analyze web lateral behavior within spans, study propagation of lateral disturbances, and aid in the development of closed loop lateral control systems in emerging applications that require precise lateral positioning of the web. Both web lateral position and slope must be controlled to minimize propagation of lateral web oscillations into downstream spans. We illustrate the use of the new governing equations by providing numerical simulations for some representative disturbance and span scenarios.
The stability of Ni silicide films formed with a thin interlayer of Pt onto poly-Si layer has been investigated in a wide range of silicidation temperatures between 350 and 900 degrees C and post-silicidation heat tre...
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The stability of Ni silicide films formed with a thin interlayer of Pt onto poly-Si layer has been investigated in a wide range of silicidation temperatures between 350 and 900 degrees C and post-silicidation heat treatments between 500 and 1000 degrees C, using different characterization techniques to analyze the surface, cross-section interfaces and electrical characteristics. Formation of uniform and stable Ni(Pt)Si/poly-Si layered structures with low sheet resistances of about 5 Omega/ sq. were observed up to 700 degrees C annealing temperature, except those obtained at 350 degrees C that presented a sheet resistance of 22 Omega/sq. At high temperatures, as-silicided and heat treated samples exhibited a drastic increase of the sheet resistance at 800/850 degrees C, respectively, due to the layer inversion and degradation of the morphology. (c) 2005 Elsevier B.V. All rights reserved.
The properties of boron nitride (BN) films cyclically-deposited by means of PECVD have been studied. Cyclical deposition is critical to improve the density and reduce the k of the material. When compared to convention...
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ISBN:
(纸本)9781424476763;9781424476770
The properties of boron nitride (BN) films cyclically-deposited by means of PECVD have been studied. Cyclical deposition is critical to improve the density and reduce the k of the material. When compared to conventional SiCN barriers, this material demonstrates greatly reduced leakage, superior mechanical properties and better etch selectivity. Therefore, BN is a promising candidate as a low k dielectric copper barrier and etch stop.
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