A semiconductor device includes a substrate, a first semiconductor layer formed over the substrate, a second semiconductor layer formed over the first semiconductor layer, a third semiconductor layer formed over the s...
标准号:
US10032875(B2)
A semiconductor device includes a substrate, a first semiconductor layer formed over the substrate, a second semiconductor layer formed over the first semiconductor layer, a third semiconductor layer formed over the second semiconductor layer, and a gate electrode, a source electrode, and a drain electrode that are formed over the third semiconductor layer. The first semiconductor layer includes a first nitride semiconductor. The second semiconductor includes a second nitride semiconductor. The third semiconductor layer includes a third nitride semiconductor. The concentration of oxygen included in the second semiconductor layer is less than 5.0×1018 cm?3. The concentration of oxygen included in the third semiconductor layer is greater than or equal to 5.0×1018 cm?3.
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