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Electronic structure and optical spectra of MSi2N4 (M = Mo, Ta, V) materials with single-atom decoration: a first-principles study

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Journal of materials Chemistry C 2023年第43期11卷 15097-15105页

作者： Wu, Tzu-Cheng Liao, Yin-Song Kao, Jui-Cheng Chou, Jyh-Pin Department of Physics National Tsing Hua University Hsinchu300044 Taiwan The Affiliated Senior High School of National Taiwan Normal University Taipei10658 Taiwan Tsing Hua Interdisciplinary Program National Tsing Hua University Hsinchu300044 Taiwan Department of Materials Science and Engineering National Tsing Hua University Hsinchu300044 Taiwan Department of Materials Science and Engineering National Yang Ming Chiao Tung University Hsinchu30010 Taiwan Department of Physics National Changhua University of Education Changhua50007 Taiwan

MoSi2N4 has outstanding potential for applications in electronics, spintronics, and semiconducting fabrication. This attractive scenario can be attributed to its remarkable electronic properties. In this study, we investigate the electronic structure and optical spectra of the MSi2N4 (M = Mo, Ta, and V) materials with single atom (H, N, and O) decoration using first-principles calculations. Pristine MoSi2N4 and VSi2N4 are semiconductors, and TaSi2N4 shows the half-metal properties. Decorating MoSi2N4 with single hydrogen and nitrogen atoms induces a magnetic moment. Single oxygen decorated TaSi2N4 does not change its intrinsic electronic properties, which is suitable for spintronic applications. On top of that, the semiconductor VSi2N4 can be turned into a half-metal via single hydrogen atom decoration. The absorption spectra demonstrate an enhancement in optical absorption for VSi2N4 after the decoration with a single nitrogen atom. Single atom decoration is one of the effective methods of tailoring the electronic properties of the two-dimensional MoSi2N4 family. Our findings can accelerate the development of the advanced electronic devices. © 2023 The Royal Society of Chemistry.

关键词： Silicon compounds

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A Microstructural Investigation of Sub-1 μm Copper Bonding Contact Structures in Die-to-Wafer Hybrid Bonding

A Microstructural Investigation of Sub-1 μm Copper Bonding ...

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Electronic Components and Technology Conference (ECTC)

作者： Sari Al Zerey Junghyun Cho Roy Yu Katsuyuki Sakuma Materials Science and Engineering Program Binghamton University (State University of New York) Binghamton NY USA Dept. of Mechanical Engineering and Materials Science and Engineering Program Binghamton University (State University of New York) Binghamton NY USA IBM Research Albany NY USA

ISBN: (数字)9798350375985

ISBN: (纸本)9798350375992

This study explored the fine pitch scalability of the die-to-die level vertical stacking through the Cu/SiO 2 hybrid bonding technique for chips with varying Cu contact diameters (0.8-4 μm) and pitch spacings (2-10 μm). It also addresses challenges associated with the scalability of hybrid bonding including the precise alignment of the top/bottom Cu pads. In addition, we seek a better understanding of the microstructural evolution and mechanical deformation of Cu grains during the hybrid bonding process. This involves microstructural characterization of the Cu films before and after the hybrid bonding via scanning electron microscopy (SEM) and electron backscatter diffraction (EBSD). In conclusion, this study offers some explanation on controlling mechanisms of the Cu-Cu bonding and highlights the desirable initial microstructural features and grain orientations of the Cu pads to improve the Cu-Cu bonding quality for hybrid bonding.

关键词： Scanning electron microscopy Deformation Scalability Electron backscatter diffraction Films Stacking Electronic components

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Rational construction and triethylamine sensing performance of foam shapedα-MoO_(3)@SnS_(2) nanosheets

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Chinese Chemical Letters 2022年第1期33卷 567-572页

作者： Xianhui Dong Qing Han Yaru Kang Haidong Li Xinyu Huang Zhengtao Fang Huimin Yuan Ahmed A.Elzatahry Zongtao Chi Guanglei Wu Wanfeng Xie School of Material Science&Engineering Institute of Materials for Energy and EnvironmentState Key Laboratory of Bio-Fibers and Eco-TextilesQingdao UniversityQingdao 266071China School of Electronics and Information Qingdao UniversityQingdao 266071China College of Physics and Electronic Engineering Qilu Normal UniversityJi'nan 250200China Materials Science and Technology Program College of Arts and SciencesQatar UniversityPO Box 2713DohaQatar

Owing to their high surface area,stable structure and easy fabrication,composite nanomaterials with encapsulation structures have attracted considerable research interest as sensing materials to detect volatile organic ***,a hydrothermal route is designed to prepare foam shapedα-MoO_(3)@SnS_(2)nanosheets that exhibit excellent sensing performance for triethylamine(TEA).The developed sensor,based onα-MoO_(3)@SnS_(2)nanosheets,displays a high response of 114.9 for 100 ppm TEA at a low working temperature of 175℃with sensitivity higher than many other reported *** addition,the device shows a wide concentration detection range(from 500 ppb to 500 ppm),good stability after exposure to air for 80 days,and excellent *** superior sensing characteristics of the developed sensor are attributed to the high crystallinity ofα-MoO_(3)/SnS_(2),excessive and accessible active sites provided by the good permeability of porous SnS_(2)shells,and the excellent conductivity of the encapsulation heterojunction ***,the foam shapedα-MoO_(3)@SnS_(2)nanosheets presented herein have promising practical applications in TEA gas sensing devices.

关键词： MoO_(3) SnS_(2) Encapsulation heterojunction Triethylamine Sensing performance

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All dielectric compact broadband silicon waveguide mode converters

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Optical and Quantum Electronics 2024年第12期56卷 1-21页

作者： Hassan, Samar Hassan A. Hameed, Mohamed Farhat O. Mahmoud, Korany R. Wageeh, Amr Obayya, S.S.A. Electronics and Communications Engineering Department Faculty of Engineering Helwan University Cairo Egypt Centre for Nanotechnology Zewail City of Science Technology and Innovation October Gardens 6Th of October City Giza12578 Egypt Nanotechnology and Nanoelectronics Engineering Program Zewail City of Science Technology and Innovation October Gardens 6Th of October City Giza12578 Egypt Mathematics and Engineering Physics Department Faculty of Engineering University of Mansoura Mansoura35516 Egypt Cairo Egypt Giza Egypt Centre for Photonics and Smart Materials Zewail City of Science Technology and Innovation October Gardens 6Th of October City Giza12578 Egypt Department of Electronics and Communications Engineering Faculty of Engineering University of Mansoura Mansoura35516 Egypt

Compact mode order converters (MOCs) operating at the mid-infrared regime are reported using silicon-on-calcium fluoride platform. The suggested designs convert the fundamental transverse electric (TE) mode to first and second order TE modes with total device lengths of only 5.89 μm and 5 μm, respectively, at λ = 3.14 µm. The full vectorial 3D finite-deference time-domain is utilized to analyze the TE0 → TE1 and TE0→TE2 MOCs. The proposed designs depend on using dielectric material of Si3N4 inside the Si core region to improve and facilitate the mode conversion process. The conversion efficiencies (inter-modal crosstalks [CTs]) are equal to 93.4% (− 19.2 dB), and 90% (− 17 dB) for TE0: TE1 and TE0:TE2 MOCs, respectively. Moreover, the reported designs have a wide wavelength range of 300 nm, where the conversion-efficiency (CE) and maximum CT are > 86% and 0: TE1 and TE0: TE2 MOCs, respectively, at λ = 1.55 µm. © The Author(s), under exclusive licence to Springer science+Business Media, LLC, part of Springer Nature 2024.

关键词： Silicon photonics

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Hybrid 2D/CMOS microchips for memristive applications

Hybrid 2D/CMOS microchips for memristive applications

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IEEE Nanotechnology materials and Devices Conference (NMDC)

作者： Mario Lanza Materials Science and Engineering Program Physical Science and Engineering Division King Abdullah University of Science and Technology (KAUST) Thuwal Saudi Arabia

Two-dimensional layered materials (2D-LMs) materials have outstanding physical, chemical and thermal properties that make them attractive for the fabrication of solid-state micro/nano-electronic devices and circuits. However, synthesizing high-quality 2D-LMs at the wafer scale is difficult, and integrating them in semiconductor production lines brings associated multiple challenges. Nevertheless, in the past few years substantial progress has been achieved and leading companies like TSMC, Samsung and Imec have started to work more intensively on the fabrication of devices using 2D-LMs. In this invited talk, I will present our work towards hybrid 2D/CMOS microchips, with special emphasis on those dedicated to realize memristive operations. I will show state-of-the-art performance as electronic memory, as well as other novel properties that traditional microchips don’t exhibit, and that enable different innovative applications.

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The Scalability of Third Generation Photovoltaics: Deposition Techniques and Modularity

The Scalability of Third Generation Photovoltaics: Depositio...

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2023 Sharjah International Conference on Physics of Advanced materials, SICPAM 2023

作者： Ayoub, Mohamad Alashkar, Adnan Mdallal, Ayman Ibrahim, Taleb Khamis, Mustafa Alami, Abdul Hai Sustainable and Renewable Energy Engineering Department University of Sharjah Sharjah27272 United Arab Emirates PhD Program in Materials Science and Engineering American University of Sharjah Sharjah26666 United Arab Emirates Department of Chemical Engineering American University of Sharjah Sharjah26666 United Arab Emirates Department of Biology Chemistry and Environmental Sciences College of Arts and Sciences American University of Sharjah Sharjah26666 United Arab Emirates Center for Advanced Materials Research Research Institute of Science and Engineering University of Sharjah Sharjah27272 United Arab Emirates

The development of third-generation photovoltaic (TGPV) technologies promises to address some of the limitations of conventional silicon-based solar cells. However, the scalability of these technologies is a critical factor in their practical application. TGPV include Perovskite Solar Cells (PSC), Organic Solar Cells (OSC), and Dye-Sensitized Solar Cell (DSSC). This paper reviews and summarizes the recent trends and research on the deposition techniques and modularity of TGPV. Various deposition techniques such as slot-die coating, thermal evaporation, and spray pyrolysis are discussed, along with their advantages and limitations. Modularity, which allows for the integration of TGPV cells into different structures, is also examined as a critical factor in scalability. The paper concludes that the scalability of TGPV technologies depends on the development of efficient and cost-effective deposition techniques and modularity, which will facilitate the integration of the TGPV cells into various structures and enable the widespread use of these promising technologies. © Published under licence by IOP Publishing Ltd.

关键词： Perovskite solar cells

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Back-end-of-line integration of 2D materials on silicon microchips

Back-end-of-line integration of 2D materials on silicon micr...

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International Electron Devices Meeting (IEDM)

作者： M. Lanza S. Pazos K. Zhu Y. Yuan Y. Shen O. Alharbi W. Zheng X. Zhang H. N. Alshareef Materials Science and Engineering Program Physical Science and Engineering Division King Abdullah University of Science and Technology (KAUST) Thuwal Saudi Arabia

Two-dimensional (2D) materials have excellent electronic and thermal properties that could help to improve the performance of electronic devices and circuits. However, scalable 2D materials synthesis and their integration in silicon microchips (with, for example, complementary metal-oxide-semiconductor, CMOS) transistors presents some challenges, mainly related to the presence of local defects that degrade device/circuit performance. In this invited article, we discuss the integration of 2D materials in silicon microchips. We analyze the type of materials and their properties, the main synthesis and manipulation methods, the type of circuits fabricated, the electronic performance achieved, as well as the future challenges and solutions. We focus on microchips with pre-patterned CMOS circuits on which the 2D material is deposited at the back-end-of-line (BEOL).

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Atomic-scale Origin of the Low Grain-boundary Resistance in Perovskite Solid Electrolyte Li0.375Sr0.4375Ta0.75Zr0.25O3

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Microscopy and microanalysis : the official journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada 2023年第1期29卷 1267-1269页

作者： Lee, Tom Qi, Ji Gadre, Chaitanya A. Huyan, Huaixun Ko, Shu-Ting Zuo, Yunxing Du, Chaojie Li, Jie Aoki, Toshihiro Wu, Ruqian Luo, Jian Ong, Shyue Ping Pan, Xiaoqing Department of Materials Science and Engineering University of California at Irvine Irvine CA United States Materials Science and Engineering Program University of California San Diego La Jolla CA United States Department of Physics and Astronomy University of California at Irvine Irvine CA United States Department of NanoEngineering University of California San Diego La Jolla CA United States Irvine Materials Research Institute University of California at Irvine Irvine CA United States

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Basal and Edge Plane Activity of Two-Dimensional Dirac Semimetal Nite2 for Hydrogen Evolution Reaction

SSRN

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SSRN 2025年

作者： Cho, Suyeon Jeong, Seung Weon Kim, Jeong Hyo Lee, Seungyeon Yang, Heejun Lee, Sangheon Division of Chemical Engineering and Materials Science Graduate Program in System Health Science and Engineering Ewha Womans University Seoul03760 Korea Republic of Daejeon34141 Korea Republic of

. Nickel ditelluride (NiTe2), one of group-10 transition metal dichalcogenides, has shown intriguing surface states originating from its topological semi-metallicity. Here, we demonstrate abnormal catalytic activities at the NiTe2 surface for hydrogen evolution reaction (HER). We investigate the differences in catalytic activities at the basal and edge planes of NiTe2 using a micro-sized electrochemical reactor. The basal plane is found to be more active than the edge plane, resulting in a current density at the basal plane of NiTe2 exceeding 800 mA/cm2 with a small overpotential of -0.162 V. We conduct ab initio calculations to estimate the intrinsic catalytic activities of HER on the basal and edge planes of NiTe2. Interestingly, our calculation results suggest that the active sites at the edge plane are electrochemically more active than those at the basal plane. The discrepancy between the experimental measurements and theoretical predictions for the crystal-orientation-dependent HER activity highlights that the specialty of a topological semimetal plays a vital role in determining the HER rate for NiTe2 nanoparticle catalysts © 2025, The Authors. All rights reserved.

关键词： Hydrogen evolution reaction

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engineering dimensionality of collective dipole-dipole interactions using a nanophotonic environment

Engineering dimensionality of collective dipole-dipole inter...

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2023 Conference on Lasers and Electro-Optics, CLEO 2023

作者： Boddeti, Ashwin K. Wang, Yi Juarez, Xitlali Boltasseva, Alexandra Alaeian, Hadiseh Odom, Teri W. Jacob, Zubin Elmore Family School of Electrical and Computer Engineering Birck Nanotechnology Center Purdue University West LafayetteIN47907 United States Graduate Program in Applied Physics Northwestern University EvanstonIL60208 United States Department of Materials Science and Engineering Northwestern University EvanstonIL60208 United States Department of Chemistry Department of Materials Science and Engineering Northwestern University EvanstonIL60208 United States

ISBN: (纸本)9781957171258

We experimentally demonstrate reduced dimensionality in a interacting ensemble of emitters. The well-known stretched exponential decay dynamics, (Equation presented) with β = 0.5 in 3D geometries, is strikingly modified in a nanophotonic environment that supports long-range interaction to β ~ 0.3. © Optica Publishing Group 2023.

关键词： Nanophotonics

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