Random copolymers, poly(l-lactide-r-glycolide) are synthesized by one-pot ring-opening polymerization of l-lactide and glycolide in the presence of stannous octoate and 1-dodecanol. Block copolymers, poly(l-lactide-b-...
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Sulfide solid electrolytes(e.g.,lithium thiophosphates)have the highest room-temperature ionic conductivity(-10^(-2) S cm^(-1))among solid Li-ion conductors so far,and thus have attracted ever-increasing attention for...
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Sulfide solid electrolytes(e.g.,lithium thiophosphates)have the highest room-temperature ionic conductivity(-10^(-2) S cm^(-1))among solid Li-ion conductors so far,and thus have attracted ever-increasing attention for high energy-density and safety all-solid-state batteries(ASSBs).However,interfacial issues between sulfide electrolytes and electrodes have been the main challenges for their applications in *** interfacial instabilities would occur due to side reactions of sulfides with electrodes,poor solid-solid contact,and lithium dendrites during charge/discharge *** this review,we analyze the interfacial issues in ASSBs based on sulfide electrolytes,and in particular,discuss strategies for solving these interfacial issues and stabilize the electrode-electrolyte ***,a perspective of the interfacial engineering for sulfide-based ASSBs is provided.
The outstanding thermoelectric performance of GeTe has attracted significant attention in the research community in recent years. However, many of the underlying physical mechanisms that contribute to GeTe's excep...
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The pyrite-structure transition-metal disulfide NiS2 is in principle a model cubic antiferromagnetic Mott insulator that can be doped through insulator-metal transitions with both electrons and holes (in Ni1–xCuxS2 a...
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The pyrite-structure transition-metal disulfide NiS2 is in principle a model cubic antiferromagnetic Mott insulator that can be doped through insulator-metal transitions with both electrons and holes (in Ni1–xCuxS2 and Ni1–xCoxS2), eventually inducing superconductivity and ferromagnetism, respectively. Magnetism and transport have proven challenging to understand in NiS2, however. The antiferromagnetic spin structure below ∼39K is complex due to frustration, while unexplained weak ferromagnetism emerges below ∼30K. Surface conduction is also now understood to dominate in NiS2 at low temperatures, raising questions about the interpretation of decades of prior data. Here, we present a complete study of the surface magnetotransport phenomena that emerge at low temperatures in high-quality single-crystal NiS2, which turn out to be strikingly rich. On cooling, isotropic magnetoresistance due to a field-induced shift of the first-order weak ferromagnetic ordering transition is first uncovered, i.e., metamagnetic magnetoresistance. At lower temperatures, larger, anisotropic magnetoresistance effects arise due to distinct switching events associated with the weak ferromagnetism. Strong evidence is presented that this is due to a field-driven in-plane to out-of-plane reorientation of surface spins, likely correlated with surface steps and terraces. In-plane exchange bias accompanies these effects, further supporting this interpretation. At the lowest temperatures, the spin reorientation field eventually exceeds the 9-T measurement window, generating strongly field-asymmetric magnetoresistance. Some of these unusual phenomena also manifest in the Hall channel, culminating in a sizable anomalous Hall effect at low temperatures. These results significantly demystify recent magnetoresistance and magnetic microscopy observations in NiS2 crystals and nanoflakes, and constitute an important step in elucidating the complex electronic and magnetic properties of this pivotal antiferro
We present an innovative, platform-independent concept for multiparameter sensing where the measurable parameters are in series, or cascaded, enabling measurements as a function of position. With temporally resolved d...
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We present an innovative, platform-independent concept for multiparameter sensing where the measurable parameters are in series, or cascaded, enabling measurements as a function of position. With temporally resolved detection, we show that squeezing can give a quantum enhancement in sensitivity over that of classical states by a factor of e2r, where r≈1 is the squeezing parameter. As an example, we have modeled an interferometer that senses multiple phase shifts along the same path, demonstrating a maximal quantum advantage by combining a coherent state with squeezed vacuum. Further classical modeling with up to 100 phases shows linear scaling potential for adding nodes to the sensor. The approach can be applied to remote sensing, geophysical surveying, and infrastructure monitoring.
The manufacturing process of all-solid-state batteries necessitates the use of polymer ***,these binders,being ionic insulators by nature,can adversely affect charge transport within composite cathodes,thereby impacti...
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The manufacturing process of all-solid-state batteries necessitates the use of polymer ***,these binders,being ionic insulators by nature,can adversely affect charge transport within composite cathodes,thereby impacting the rate performance of the *** this work,we aim to investigate the impact of fabrication methods,specifically the solvent-free dry process versus the slurry-cast wet process,on binder distribution and charge transport in composite cathodes of solid-state *** the dry process,the binder forms a fibrous network,while the wet process results in binder coverage on the surface of cathode active *** difference in microstructure leads to a notable 20-fold increase in ionic conductivity in the dry-processed ***,the cells processed via the dry method exhibit higher capacity retention of 89%and 83%at C/3 and C/2 rates,respectively,in comparison to 68%and 58%for the wet-processed cells at the same *** findings provide valuable insights into the influence of fabrication methods on binder distribution and charge transport,contributing to a better understanding of the binder’s role in manufacturing of all-solid-state batteries.
Oxide heterostructures based on SrTiO3 have emerged as a rich platform for exploring physical phenomena, most notably conductivity at interfaces between insulators. In this study, we investigate the electronic propert...
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Oxide heterostructures based on SrTiO3 have emerged as a rich platform for exploring physical phenomena, most notably conductivity at interfaces between insulators. In this study, we investigate the electronic properties of an oxide-semiconductor heterostructure—SrTiO3 films grown epitaxially on Si(001). The lattice mismatch induces epitaxial strain, breaking the cubic symmetry of SrTiO3 and resulting in tetragonal distortion. Magnetotransport measurements reveal that the temperature and magnetic field dependence of the conductivity are dominated by two-dimensional quantum effects, weak localization, and electron-electron interactions. The low-temperature electronic properties indicate quantum confinement, strong electron correlations, exchange interactions, and Zeeman spin splitting. These findings underscore the potential of the SrTiO3/Si heterostructure for designing oxide-based quantum devices.
Experiments have shown that the light-emission efficiency of indium gallium nitride [(In,Ga)N] light-emitting diodes improves with increasing indium concentration. It is widely thought that compositional fluctuations ...
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Experiments have shown that the light-emission efficiency of indium gallium nitride [(In,Ga)N] light-emitting diodes improves with increasing indium concentration. It is widely thought that compositional fluctuations due to indium incorporation suppress diffusion of carriers to nonradiative centers, thus leading to defect-insensitive emission. However, recent experiments have challenged this hypothesis by revealing unexpectedly long diffusion lengths at room temperature. Here, we demonstrate an alternative mechanism involving the correlated reduction in radiative and nonradiative recombination rates that explains the increase in light-emission efficiency of (In,Ga)N with increasing indium concentration, without invoking the suppression of carrier diffusion. Our analysis challenges the notion that carrier localization gives rise to defect tolerance in (In,Ga)N.
As industries reliant on steam-based processes strive to reduce fossil fuel consumption and carbon emissions, interest in renewable technologies, particularly photovoltaic/thermal (PVT) systems that generate both ther...
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