DSOI,bulk Si and SOI MOSFETs are fabricated on the same die successfully using local oxygen implantation *** thermal properties of the three kinds of devices are described and compared from simulation and *** simulat...
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DSOI,bulk Si and SOI MOSFETs are fabricated on the same die successfully using local oxygen implantation *** thermal properties of the three kinds of devices are described and compared from simulation and *** simulation and measurement prove that DSOI MOSFETs have the advantage of much lower thermal resistance of substrate and suffer less severe self heating effect than their SOI counterparts. At the same time,the electrical advantages of SOI devices can *** thermal resistance of DSOI devices is very close to that of bulk devices and DSOI devices can keep this advantage into deep sub micron realm.
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