The relaxation oscillation characteristics of a resonant tunneling diode （RTD） with applied pressure are reported. The oscillation circuit is simulated and designed by Pspice 8. 0, and the measured oscillation frequ...
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The relaxation oscillation characteristics of a resonant tunneling diode （RTD） with applied pressure are reported. The oscillation circuit is simulated and designed by Pspice 8. 0, and the measured oscillation frequency is up to 200kHz. Using molecular beam epitaxy （MBE） ,AIAs/lnx Ga1-x As/GaAs double barrier resonant tunneling structures （DBRTS） are grown on （100） semi-insulated （SI） GaAs substrate,and the RTD is processed by Au/Ge/Ni/Au metallization and an airbridge structure. Because of the piezoresistive effect of RTD,with Raman spectrum to measure the applied pressure, the relaxation oscillation characteristics have been studied, which show that the relaxation oscillation frequency has approxi- mately a - 17.9kHz/MPa change.
A calculation and test method for the natural frequency of a high-g micro accelerometer with complex structures is presented. A universal formula for natural frequency, which can significantly simplify the structural ...
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A calculation and test method for the natural frequency of a high-g micro accelerometer with complex structures is presented. A universal formula for natural frequency, which can significantly simplify the structural design process, is deduced and confirmed by experiment. A simplified analytical model is established to describe the accelerometer＇s mechanical behavior and deduce the formula for the natural frequency. Finite element modeling is also conducted to evaluate the natural frequency of the micro-accelerometer and verify the formula. The results obtained from the analytical model and the finite element simulation show good agreement. Finally, a shock comparison method designed for acquiring the high frequency characteristics of the accelerometer is introduced to verify the formula by testing its actual natural frequency.
This paper reports the piezoresistive effect of a resonant tunneling diode （RTD） in a microstructure. The fourbeam structure is analyzed and fabricated by positing RTDs at the stress sensitive regions. Stress along ...
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This paper reports the piezoresistive effect of a resonant tunneling diode （RTD） in a microstructure. The fourbeam structure is analyzed and fabricated by positing RTDs at the stress sensitive regions. Stress along the [110] orienta- tion and [110]ientation induces a change in the RTD＇s current-voltage （I-V） curves,i, e., the meso-piezoresistance variety,mainly in its negative different resistance （NDR） region. By different methods,the mechanic-electric coupling characteristic of RTD is studied and the consistent 10^9Pa^1 piezoresistive coefficients are discovered.
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