针对记录仪在高强度、高速撞击挤压等恶劣环境下出现损坏的现象,为了防止弹载记录仪的外壳被挤压变形,对记录仪的机械结构设计进行了优化改进。将记录仪外壳材料由优化前的45#钢更换为高强度钢35Cr Mn Si A,并将靠近内层保护壳的外壳壁...
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针对记录仪在高强度、高速撞击挤压等恶劣环境下出现损坏的现象,为了防止弹载记录仪的外壳被挤压变形,对记录仪的机械结构设计进行了优化改进。将记录仪外壳材料由优化前的45#钢更换为高强度钢35Cr Mn Si A,并将靠近内层保护壳的外壳壁厚由8mm增加到17mm,内层核心电路保护壳也采用高强度钢35Cr Mn Si A,壳体内部采用环氧树脂灌封。通过ANSYS/LS-DYNA软件仿真计算,结合高冲击下能量吸收理论分析得出:优化改进前和改进后外壳所能承受的极限强度分别为1.490GPa和4.973GPa;外壳吸收能量与整体吸收能量的比值由58.63%提高到75.52%。由此证明该方案是可行的,能够防止记录仪在配重模块质量为20kg、初速度为200m/s的高强度撞击下出现外壳破损,能够很好地保护记录仪核心模块。本文结果对弹上产品的机械结构设计以及核心电路保护具有一定的参考价值。
The relaxation oscillation characteristics of a resonant tunneling diode （RTD） with applied pressure are reported. The oscillation circuit is simulated and designed by Pspice 8. 0, and the measured oscillation frequ...
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The relaxation oscillation characteristics of a resonant tunneling diode （RTD） with applied pressure are reported. The oscillation circuit is simulated and designed by Pspice 8. 0, and the measured oscillation frequency is up to 200kHz. Using molecular beam epitaxy （MBE） ,AIAs/lnx Ga1-x As/GaAs double barrier resonant tunneling structures （DBRTS） are grown on （100） semi-insulated （SI） GaAs substrate,and the RTD is processed by Au/Ge/Ni/Au metallization and an airbridge structure. Because of the piezoresistive effect of RTD,with Raman spectrum to measure the applied pressure, the relaxation oscillation characteristics have been studied, which show that the relaxation oscillation frequency has approxi- mately a - 17.9kHz/MPa change.
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