DSOI,bulk Si and SOI MOSFETs are fabricated on the same die successfully using local oxygen implantation *** thermal properties of the three kinds of devices are described and compared from simulation and *** simulat...
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DSOI,bulk Si and SOI MOSFETs are fabricated on the same die successfully using local oxygen implantation *** thermal properties of the three kinds of devices are described and compared from simulation and *** simulation and measurement prove that DSOI MOSFETs have the advantage of much lower thermal resistance of substrate and suffer less severe self heating effect than their SOI counterparts. At the same time,the electrical advantages of SOI devices can *** thermal resistance of DSOI devices is very close to that of bulk devices and DSOI devices can keep this advantage into deep sub micron realm.
A novel patterned-SOI LDMOS structure with a silicon window beneath the p well is *** performance is simulated *** comparison to SOI counterpart,the off-state and the on-state breakdown voltage can increase by 57% and...
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A novel patterned-SOI LDMOS structure with a silicon window beneath the p well is *** performance is simulated *** comparison to SOI counterpart,the off-state and the on-state breakdown voltage can increase by 57% and 70% respectively;transconductance is flatter;I-V curves take no sign of kink in the saturation region;the device temperature is much lower even at high input power;the floating body effect and the self-heating effect are distinctly ***,the advantage of low leakage current and low output capacitance in SOI structures does not *** proposed structure will be a promising choice to improve the performance and reliability of SOI power device.
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