A RF low noise amplifier,integrated in a single bluetooth transceiver chip and fabricated in 0.35μm digital CMOS technology,is *** the consideration of ESD protection and package,design methodology is discussed from ...
详细信息
A RF low noise amplifier,integrated in a single bluetooth transceiver chip and fabricated in 0.35μm digital CMOS technology,is *** the consideration of ESD protection and package,design methodology is discussed from the aspects of noise optimization,impedance match,and forward *** 2.05GHz,the measured S 11 is -6.4dB, S 21 is 11dB with 3dB-BW of 300MHz,and NF is about *** indicates that comprehensive consideration of parasitics,package model,and reasonable process is necessary for RF circuit design.
暂无评论