A double layered porous silicon with different porosity is formed on a heavy doped p type Si(111) substrate by changing current density during the *** a high quality epitaxial mono crystalline silicon film is grown ...
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A double layered porous silicon with different porosity is formed on a heavy doped p type Si(111) substrate by changing current density during the *** a high quality epitaxial mono crystalline silicon film is grown on the porous silicon using an ultra high vacuum electron beam *** wafer is bonded with other silicon wafer with a thermal oxide layer at room *** bonded pairs are split along the porous silicon layer during subsequent thermal *** the epitaxial Si film is transferred to the oxidized wafer to form a silicon on insulator ***,XTEM,spreading resistance probe and Hall measurement show that the SOI structure has good structural and electrical quality.
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