Dual pn junctions in lateral and vertical directions are formed by diffusing the p^＋ on the patterned n-well in standard CMOS technology, which are inserted under the inductor in order to reduce the currents in the s...
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Dual pn junctions in lateral and vertical directions are formed by diffusing the p^＋ on the patterned n-well in standard CMOS technology, which are inserted under the inductor in order to reduce the currents in the substrate induced by the electromagnetic field from the inductor. The thickness of high resistance is not equivalent to the width of the depletion region of the vertical pn junctions,but the depth of the bottom pn junction in the substrate are both proposed and validated. For the first time, through the grounded p^＋-diffusion layer shielding the suhstrate from the electric field of the inductor, the width of the depletion regions of the lateral and vertical pn junctions are changed by increasing the voltage applied to the n wells. The quality factor is improved or reduced with the thickness of high resistance by 19%. This phenomenon validates the theory that the pn junction substrate isolation can reduce the loss caused by the currents in the substrate induced by the electromagnetic field from the inductor.
A design and implementation for a 2.4GHz quadrature output frequency synthesizer intended for bluetooth in 0. 35μm CMOS technology are presented. A differentially controlled quadrature voltage-controlled oscillator ...
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A design and implementation for a 2.4GHz quadrature output frequency synthesizer intended for bluetooth in 0. 35μm CMOS technology are presented. A differentially controlled quadrature voltage-controlled oscillator （QVCO） is employed to generate quadrature （I/Q） signals. A second-order loop filter, with a unit gain transconductance amplifier having the performance of a third-order loop filter,is exploited for low cost. The measured spot phase noise is -106.15dBc/Hz@ 1MHz. Close-in phase noise is less than -70dBc/Hz. The synthesizer consumes 13.5mA under a 3.3V voltage supply. The core size is 1.3mm×0. 8mm.
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