A 4. 224GHz quadrature voltage-controlled oscillator （QVCO） applied in MB-OFDM UWB synthesizers is implemented in 0.18μm RF-CMOS technology. An improved structure of the QVCO is presented for better phase noise. A ...
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A 4. 224GHz quadrature voltage-controlled oscillator （QVCO） applied in MB-OFDM UWB synthesizers is implemented in 0.18μm RF-CMOS technology. An improved structure of the QVCO is presented for better phase noise. A novel configuration of a MOS varactor is designed for good linearity of K as well as a new digital capacitor controlled array topology with lower parasitic capacitance and lower Ron. Measurement results show a phase noise of - 90.4dBc/Hz at 100kHz offset and - 116.7dBc/Hz at 1MHz offset from a carrier close to 4. 224GHz. The power dissipation is 10. 55mW from a 1.8V supply.
A new temperature compensation technique for ring-oscillator-based ADCs is proposed. This technique employs a novelcfixed-number-based algorithm and CTAT current biasing technology to compensate the temperature-depend...
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A new temperature compensation technique for ring-oscillator-based ADCs is proposed. This technique employs a novelcfixed-number-based algorithm and CTAT current biasing technology to compensate the temperature-dependent variations of the output, thus eliminating the need for digital calibrations. Simulation results prove that, with the proposed technique,the resolution in the temperature range of 0 to 100℃ can reach a 2mV quantization bin size with an input voltage span of 120mV at the sampling frequency of fs = 100kHz.
A novel AC to DC charge pump with high performance is presented. Due to the pMOS structure and threshold voltage canceling technology, the efficiency and the output voltage are greatly improved. Test results show that...
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A novel AC to DC charge pump with high performance is presented. Due to the pMOS structure and threshold voltage canceling technology, the efficiency and the output voltage are greatly improved. Test results show that the output voltage and power efficiency are improved by 125% and 104% respectively at 13.56MHz for a 1V sinusoidal input compared to the traditional MOS diodes structure.
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