研究了在 Co/Ti/Si结构中加入非晶 Ge Si层对 Co Si2 /Si异质固相外延的影响 ,用离子束溅射方法在Si衬底上制备 Co/Ge Si/Ti/Si结构多层薄膜 ,通过快速热退火使多层薄膜发生固相反应。采用四探针电阻仪、AES、XRD、RBS等方法进行测试。...
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研究了在 Co/Ti/Si结构中加入非晶 Ge Si层对 Co Si2 /Si异质固相外延的影响 ,用离子束溅射方法在Si衬底上制备 Co/Ge Si/Ti/Si结构多层薄膜 ,通过快速热退火使多层薄膜发生固相反应。采用四探针电阻仪、AES、XRD、RBS等方法进行测试。实验表明 ,利用 Co/Ge Si/Ti/Si固相反应形成的 Co Si2 薄膜具有良好的外延特性和电学特性 ,Ti中间层和非晶 Ge Si中间层具有促进和改善 Co Si2 外延质量 ,减少衬底耗硅量的作用。Ge原子的存在能够改善外延 Co Si2
The evolution of self organized Ge quantum dots structure is investigated by scanning tunneling microscopy and atomic force microscopy during annealing treatment up to 700℃ in an ultra high vacuum(UHV) *** the sampl...
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The evolution of self organized Ge quantum dots structure is investigated by scanning tunneling microscopy and atomic force microscopy during annealing treatment up to 700℃ in an ultra high vacuum(UHV) *** the sample temperature rises to 630℃,a great amount of new dots emerge on the wetting layer,which are believed to be incoherent islands compared with the dislocation free coherent islands formed during molecular beam epitaxy growth.
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