A wavelet collocation method with nonlinear auto companding is proposed for behavioral modeling of switched current *** companding function is automatically constructed according to the initial error distribution ob...
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A wavelet collocation method with nonlinear auto companding is proposed for behavioral modeling of switched current *** companding function is automatically constructed according to the initial error distribution obtained through approximating the input output function of the SI circuit by conventional wavelet collocation *** practical applications,the proposed method is a general purpose approach,by which both the small signal effect and the large signal effect are modeled in a unified formulation to ease the process of modeling and *** with the published modeling approaches,the proposed nonlinear auto companding method works more efficiently not only in controlling the error distribution but also in reducing the modeling *** demonstrate the promising features of the proposed method,several SI circuits are employed as examples to be modeled and simulated.
A double layered porous silicon with different porosity is formed on a heavy doped p type Si(111) substrate by changing current density during the *** a high quality epitaxial mono crystalline silicon film is grown ...
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A double layered porous silicon with different porosity is formed on a heavy doped p type Si(111) substrate by changing current density during the *** a high quality epitaxial mono crystalline silicon film is grown on the porous silicon using an ultra high vacuum electron beam *** wafer is bonded with other silicon wafer with a thermal oxide layer at room *** bonded pairs are split along the porous silicon layer during subsequent thermal *** the epitaxial Si film is transferred to the oxidized wafer to form a silicon on insulator ***,XTEM,spreading resistance probe and Hall measurement show that the SOI structure has good structural and electrical quality.
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