A compact drain current including the variation of barrier heights and carrier quantization in ultrathin-body and double-gate Schottky barrier MOSFETs （UTBDG SBFETs） is developed. In this model, Schrodinger＇s equat...
详细信息
A compact drain current including the variation of barrier heights and carrier quantization in ultrathin-body and double-gate Schottky barrier MOSFETs （UTBDG SBFETs） is developed. In this model, Schrodinger＇s equation is solved using the triangular potential well approximation. The carrier density thus obtained is included in the space charge density to obtain quantum carrier confinement effects in the modeling of thin-body devices. Due to the quantum effects, the first subband is higher than the conduction band edge, which is equivalent to the band gap widening. Thus, the barrier heights at the source and drain increase and the carrier concentration decreases as the drain current decreases. The drawback of the existing models,which cannot present an accurate prediction of the drain current because they mainly consider the effects of Schottky barrier lowering （SBL） due to image forces,is eliminated. Our research results suggest that for small nonnegative Schottky barrier （SB） heights,even for zero barrier height, the tunneling current also plays a role in the total on-state currents. Verification of the present model was carried out by the device numerical simulator-Silvaco and showed good agreement.
The degradation of device parameters and the degradation of the stress induced leakage current （SILC） of thin tunnel gate oxide under constant direct-tunneling voltage stress are studied using nMOS and pMOSFETs with...
详细信息
The degradation of device parameters and the degradation of the stress induced leakage current （SILC） of thin tunnel gate oxide under constant direct-tunneling voltage stress are studied using nMOS and pMOSFETs with 1. 4nm gate oxides. Experimental results show that there is a linear correlation between the degradation of the SILC and the degradation of Vth in MOSFETs during different direct-tunneling （DT） stresses. A model of tunneling assisted by interface traps and oxide trapped positive charges is developed to explain the origin of SILC during DT stress.
暂无评论