通过三维数值模拟,深入分析了P+ Plug区的深度、源区掺杂浓度、漏极偏置、入射离子的LET值、入射角度和入射位置对功率UMOSFET (U-Shape Metal Oxide Semiconductor Field Effect Transistor,槽栅型场效应晶体管)的SEB (Single Event Bu...
详细信息
通过三维数值模拟,深入分析了P+ Plug区的深度、源区掺杂浓度、漏极偏置、入射离子的LET值、入射角度和入射位置对功率UMOSFET (U-Shape Metal Oxide Semiconductor Field Effect Transistor,槽栅型场效应晶体管)的SEB (Single Event Burnout,单粒子烧毁)敏感性的影响.模拟结果表明：增大P+Plug区深度、降低源区掺杂浓度、减小漏极偏置和入射离子的LET (Linear Energy Transfer,线性能量传输值)可有效降低SEB的发生;当入射离子的LET值较低时，斜入射比垂直入射更易引发SEB;功率UMOSFET的SEB的最敏感位置为栅极下方的径区中心。
MAGNETICALLY insulated inductive voltage adders (MIVA) are widely used in applications of X-rays radiography and effect simulations. At present in almost all MIVA cells, the transformer oil is chosen as dielectric med...
详细信息
MAGNETICALLY insulated inductive voltage adders (MIVA) are widely used in applications of X-rays radiography and effect simulations. At present in almost all MIVA cells, the transformer oil is chosen as dielectric mediums. It is worth investigating whether the oil could be replaced by another medium with higher permittivity and electric field strength. One suitable substitute may be glycerin. If the gly erin could be applied in MIVA cells, it would greatly reduce the size of azimuthal lines. Consequently, the cells would be fabricated more compact.
暂无评论