DRIE(Deep Reactive Ion Etching)工艺加工的高深宽比梳齿电容不能保证绝对平行.本文在考虑低真空空气阻尼力的同时,研究了梳齿电容倾斜的MEMS传感器对脉冲惯性信号的响应,并分析了DRIE工艺因素对器件性能的影响.研究结果表明,当传感器...
详细信息
DRIE(Deep Reactive Ion Etching)工艺加工的高深宽比梳齿电容不能保证绝对平行.本文在考虑低真空空气阻尼力的同时,研究了梳齿电容倾斜的MEMS传感器对脉冲惯性信号的响应,并分析了DRIE工艺因素对器件性能的影响.研究结果表明,当传感器为没有静电力反馈的双边电容结构时,梳齿电容的不平行对传感器的响应位移、惯性脉冲响应线性度范围影响明显,且随着封装真空度增加而加重.若传感器有静电力反馈,惯性脉冲响应的灵敏度降低,但DRIE工艺因素的影响程度降低.为了抑制DRIE工艺导致的梳齿电容不平行因素的影响,文中还设计了一个新型的变电容面积的MEMS惯性传感器,并用ANSYS初步分析了其性能,设计了其详细的制作工艺流程.
The influence of outside inertial shock combined with RF signal voltages on the properties of a shunt capacitive MEMS switch encapsulated in a low vacuum environment is analyzed considering the damping of the air arou...
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The influence of outside inertial shock combined with RF signal voltages on the properties of a shunt capacitive MEMS switch encapsulated in a low vacuum environment is analyzed considering the damping of the air around the MEMS switch membrane. An analytical expression that approximately computes the displacement induced by outside shock is obtained. According to the expression, the minimum required mechanical stiffness constant of an MEMS switch beam in some maximum tolerated insertion loss condition and some external inertial shock environment or the insertion loss induced by external inertial shock can also be obtained. The influence is also illustrated with an RF MEMS capacitive switch example,which shows that outside environment factors have to be taken into account when designing RF MEMS capacitive switches working in low vacuum. While encapsulating RF MEMS switches in low vacuum diminishes the air damping and improves the switch speed and operation voltage,the performances of a switch is incident to being influenced by outside environment. This study is very useful for the optimized design of RF MEMS capacitive switches working in low vacuum.
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