SnS:Ag thin films were deposited on ITO by pulse electro-deposition. They were characterized with X-ray diffraction spectroscopy and atomic force microscope. The as-deposited films have a new phase (Ag8SnS6) with g...
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SnS:Ag thin films were deposited on ITO by pulse electro-deposition. They were characterized with X-ray diffraction spectroscopy and atomic force microscope. The as-deposited films have a new phase (Ag8SnS6) with good crystallization and big grain size. The conductivity of the films was measured by photoelectrochemical test. It is proved that the SnS:Ag films are p-type of semiconductor. Hall measurement shows that the carrier concentration of the films increases, while their resistivity decreases after Ag-doping.
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