建立了包含“自热效应”的A lG aN/G aN HEM T(高电子迁移率晶体管)直流I-V特性解析模型。从理论的角度分析了自热效应对A lG aN/G aN HEM T器件的影响,并同已有的实验结果进行了对比,符合较好。证明基于这种模型的理论分析适于A lG aN/...
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建立了包含“自热效应”的A lG aN/G aN HEM T(高电子迁移率晶体管)直流I-V特性解析模型。从理论的角度分析了自热效应对A lG aN/G aN HEM T器件的影响,并同已有的实验结果进行了对比,符合较好。证明基于这种模型的理论分析适于A lG aN/G aN HEM T器件测试及应用的实际情况。
Strained Si_ 1-xGe_x and Si materials are successfully grown on Si substrate by ultraviolet light chemical vapor deposition under ultrahigh vacuum at a low substrate temperature of 450℃ and 480℃,*** such low tempera...
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Strained Si_ 1-xGe_x and Si materials are successfully grown on Si substrate by ultraviolet light chemical vapor deposition under ultrahigh vacuum at a low substrate temperature of 450℃ and 480℃,*** such low temperature,autodoping effects from the substrate and interdiffusion effects at each interface could be suppressed *** strained Si_ 1-xGe_x and multilayer Si_ 1-xGe_x/Si structures are examined by X-ray diffraction,SMIS,etc.,and it is found that the materials have good crystallinity and the rising and falling edges are *** technique has a capability of growing high-quality Si_ 1-xGe_x/Si strained layers.
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