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All-Optical Initialization, Readout, and Coherent Preparation of Single Silicon-Vacancy Spins in Diamond

Physical Review Letters 2014年第26期113卷 263602-263602页

作者： Lachlan J. Rogers Kay D. Jahnke Mathias H. Metsch Alp Sipahigil Jan M. Binder Tokuyuki Teraji Hitoshi Sumiya Junichi Isoya Mikhail D. Lukin Philip Hemmer Fedor Jelezko Institute for Quantum Optics and Center for Integrated Quantum Science and Technology (IQst) Ulm University Ulm D-89081 Germany Department of Physics Harvard University 17 Oxford Street Cambridge Massachusetts 02138 USA National Institute for Materials Science 1-1 Namiki Tsukuba Ibaraki 305-0044 Japan Advanced Materials R & D Laboratories Sumitomo Electric Industries Limited Itami Hyogo 664-0016 Japan Research Center for Knowledge Communities University of Tsukuba 1-2 Kasuga Tsukuba Ibaraki 305-8550 Japan Electrical & Computer Engineering Department Texas A&M University College Station Texas 77843 USA

The silicon-vacancy (SiV−) color center in diamond has attracted attention because of its unique optical properties. It exhibits spectral stability and indistinguishability that facilitate efficient generation of photons capable of demonstrating quantum interference. Here we show optical initialization and readout of electronic spin in a single SiV− center with a spin relaxation time of T1=2.4±0.2 ms. Coherent population trapping (CPT) is used to demonstrate coherent preparation of dark superposition states with a spin coherence time of T2⋆=35±3 ns. This is fundamentally limited by orbital relaxation, and an understanding of this process opens the way to extend coherence by engineering interactions with phonons. Hyperfine structure is observed in CPT measurements with the Si29 isotope which allows access to nuclear spin. These results establish the SiV− center as a solid-state spin-photon interface.

关键词： SILICON -- Optical properties ELECTRON spin states PHOTONIC crystals DIAMONDS PHONONS FINE structure (Physics)

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Self-aligned, gated field emitter arrays with integrated high-aspect-ratio current limiters

Self-aligned, gated field emitter arrays with integrated hig...

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International Conference on Vacuum Nanoelectronics (IVNC)

作者： Stephen A. Guerrera Akintunde I. Akinwande Microsystems Technology Laboratories Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology Cambridge MA USA

We report the fabrication of arrays of silicon field emitters with 1-micron pitch with integrated, self-aligned extractor gates and 10-micron tall high-aspect-ratio silicon vertical current limiters.

关键词： Logic gates Field emitter arrays Silicon Current limiters Fabrication Etching Cathodes

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Advances on Ultrafast Silicon Field Emitter Array Photocathodes for Coherent Radiation Sources Based on Inverse Compton Scattering

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Journal of Physics: Conference Series 2014年第1期557卷

作者： C Dong M Swanwick P D Keathley F X Kärtner L F Velásquez-García Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology 77 Massachusetts Avenue Cambridge MA 02139 USA Microsystems Technology Laboratories Massachusetts Institute of Technology 77 Massachusetts Avenue Cambridge MA 02139 USA Center for Free-Electron Laser Science DESY and Department of Physics University of Hamburg Notkestralse 85 D-22607 Hamburg Germany

Low-cost, compact, and coherent X-rays sources would enable exciting applications such as biomedical imaging of soft tissue and real-time visualisation of molecules at a widespread scale. A promising approach to implement such an X-ray source is based on inverse Compton scattering of a series of nanostructured electron sheets accelerated to relativistic speeds. Photon-triggered field emission arrays can readily produce planar arrays of electron bunches with pC-level sheet charge at high repetition rates using intense laser pulses. In this article, the performance of single-crystal, ultrafast, photon-actuated silicon field emitter arrays is investigated for varying emitter height. Charge vs. incident photon pulse energy characteristics and quantum efficiency of the devices are reported.

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Covariate shift in Hilbert space: A solution via surrogate kernels

Covariate shift in Hilbert space: A solution via surrogate k...

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30th International Conference on Machine Learning, ICML 2013

作者： Zhang, Kai Zheng, Vincent W. Wang, Qiaojun Kwok, James T. Yang, Qiang Marsic, Ivan NEC Laboratories America Inc. 4 Independence Way Princeton NJ 08540 United States Advanced Digital Sciences Center 1 Fusionopolis Way Singapore 138632 Singapore Department of Electrical and Computer Engineering Rutgers the State University of New Jersey NJ 08854 United States Department of Computer Science and Engineering Hong Kong University of Science and Technology Clear Water Bay Kowloon Hong Kong

ISBN: (纸本)9781629933061

Covariate shift is an unconventional learning scenario in which training and testing data have different distributions. A general principle to solve the problem is to make the training data distribution similar to that of the test domain, such that classifiers computed on the former generalize well to the latter. Current approaches typically target on sample distributions in the input space, however, for kernel-based learning methods, the algorithm performance depends directly on the geometry of the kernel-induced feature space. Motivated by this, we propose to match data distributions in the Hilbert space, which, given a pre-defined empirical kernel map, can be formulated as aligning kernel matrices across domains. In particular, to evaluate similarity of kernel matrices defined on arbitrarily different samples, the novel concept of surrogate kernel is introduced based on the Mercer's theorem. Our approach caters the model adaptation specifically to kernel-based learning mechanism, and demonstrates promising results on several real-world applications. Copyright 2013 by the author(s).

关键词： Hilbert spaces

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Nanostructured silicon photo-cathodes for x-ray generation

Nanostructured silicon photo-cathodes for x-ray generation

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International Conference on Vacuum Nanoelectronics (IVNC)

作者： M. E. Swanwick P. D. Keathley F. X. Kärtner L. F. Velásquez-García Microsystems Technology Laboratories Massachusetts Institute of Technology Cambridge MA USA Department of Electrical Engineering and Computer Science and Research Laboratory of Electronics Massachusetts Institute of Technology USA Massachusetts Institute of Technology Cambridge MA US

We report the fabrication and characterization of ultrafast laser triggered nanostructured silicon photo-cathodes for x-ray generation via inverse Compton scattering. A highly uniform array of ~2200 silicon pillars with 5 μm array pitch, where each pillar is capped by a nanosharp tip, shows stable current emission using 35 fs, 800 nm laser pulses. The cathodes can emit at 3.6 nA average current over 8-million 1.2 pC electron bunches when excited with 9.5 μJ laser pulses with no degradation of the emission characteristic of the cathode, showing that silicon-based photon-triggered cathodes processed with standard CMOS processes and operated at high vacuum can function for extended periods without performance degradation.

关键词： Measurement by laser beam Cathodes Arrays Laser excitation Photonics Standards CMOS process

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Erratum to: Methods for evaluating medical tests and biomarkers

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Diagnostic and prognostic research 2017年第1期1卷 11页

作者： Gowri Gopalakrishna Miranda Langendam Rob Scholten Patrick Bossuyt Mariska Leeflang Anna Noel-Storr James Thomas Iain Marshall Byron Wallace Penny Whiting Clare Davenport Gowri GopalaKrishna Isabel de Salis Sue Mallett Robert Wolff Richard Riley Marie Westwood Jos Kleinen Gary Collins Hans Reitsma Karel Moons Antonia Zapf Annika Hoyer Katharina Kramer Oliver Kuss J Ensor J J Deeks E C Martin R D Riley Gerta Rücker Susanne Steinhauser Martin Schumacher Joie Ensor Kym Snell Brian Willis Thomas Debray Jon Deeks Lavinia Ferrante di Ruffano Sian Taylor-Phillips Chris Hyde Stuart A Taylor Gauraang Batnagar Lavinia Ferrante Di Ruffano Farah Seedat Aileen Clarke Sarah Byron Frances Nixon Rebecca Albrow Thomas Walker Carla Deakin Zhivko Zhelev Harriet Hunt Yaling Yang Lucy Abel James Buchanan Thomas Fanshawe Bethany Shinkins Laure Wynants Jan Verbakel Sabine Van Huffel Dirk Timmerman Ben Van Calster Aeliko Zwinderman Jason Oke Jack O'Sullivan Rafael Perera Brian Nicholson Hannah L Bromley Tracy E Roberts Adele Francis Denniis Petrie G Bruce Mann Kinga Malottki Holly Smith Lucinda Billingham Alice Sitch Oke Gerke Mie Holm-Vilstrup Eivind Antonsen Segtnan Ulrich Halekoh Poul Flemming Høilund-Carlsen Bernard G Francq Jac Dinnes Julie Parkes Walter Gregory Jenny Hewison Doug Altman William Rosenberg Peter Selby Julien Asselineau Paul Perez Aïssatou Paye Emilie Bessede Cécile Proust-Lima Christiana Naaktgeboren Joris de Groot Anne Rutjes Johannes Reitsma Emmanuel Ogundimu Jonathan Cook Yannick Le Manach Yvonne Vergouwe Romin Pajouheshnia Rolf Groenwold Karen Moons Linda Peelen Daan Nieboer Bavo De Cock Micael J Pencina Ewout W Steyerberg Jennifer Cooper Nick Parsons Chris Stinton Steve Smith Andy Dickens Rachel Jordan Alexandra Enocson David Fitzmaurice Peymane Adab Charles Boachie Gaj Vidmar Karoline Freeman Martin Connock Rachel Court Carl Moons Jessica Harris Andrew Mumford Zoe Plummer Kurtis Lee Barnaby Reeves Chris Rogers Veerle Verheyden Gianni D Angelini Gavin J Murphy Jeremy Huddy Melody Ni Katherine Good Graham Cooke 1Department of Clinical Epidemiology Biostatistics & Bioinformatics Academic Medical Center University of Amsterdam Amsterdam The Netherlands. 2Cochrane Netherlands Julius Center for Health Sciences and Primary Care University Medical Center Utrecht Utrecht Netherlands. 234Department of Clinical Epidemiology Biostatistics & Bioinformatics Academic Medical Center University of Amsterdam Amsterdam The Netherlands. 49Department of Clinical Epidemiology Biostatistics & Bioinformatics Academic Medical Center University of Amsterdam Amsterdam The Netherlands. 3Cochrane Dementia and Cognitive Improvement Group University of Oxford Oxford UK. 4EPPI-Centre Department of Social Science University College London London UK. 5Division of Health and Social Care Research King's College London London UK. 6College of Computer and Information Science Northeastern University Boston USA. 13University Hospitals Bristol NHS Foundation Trust School of Social and Community Medicine Bristol UK. 275Institute of Applied Health Research University of Birmingham Birmingham UK. 9Department of Clinical Epidemiology Biostatistics & Bioinformatics Academic Medical Center University of Amsterdam Amsterdam The Netherlands. 10School of Social and Community Medicine University of Bristol Bristol UK. 179Institute of Applied Health Research University of Birmingham Birmingham UK. 12Kleijnen Systematic Reviews Ltd York UK. 25Research Institute for Primary Care and Health Sciences Keele University Keele UK. 188Centre for Statistics in Medicine Nuffield Department of Orthopaedics Rheumatology and Musculoskeletal Sciences University of Oxford Oxford UK. 191Julius Center for Health Sciences and Primary Care University Medical Center Utrecht 3584 CG Utrecht Netherlands. 237Julius Center for Health Sciences and Primary Care University Medical Center Utrecht 3584 CG Utrecht Netherlands. 18Department of Medical Statistics University Medical Center Göttingen Göttingen Germany. 19Institute for B

[This corrects the article DOI: 10.1186/s41512-016-0001-y.].

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Carbon Nanotube Robust Digital VLSI

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IEEE Transactions on computer-Aided Design of Integrated Circuits and Systems 2012年第4期31卷 453-471页

作者： Jie Zhang Albert Lin Nishant Patil Hai Wei Lan Wei H.-S. Philip Wong Subhasish Mitra Department of Electrical Engineering University of Stanford Stanford CA USA Microsystems Technology Laboratories Massachusetts Institute of Technology Cambridge MA USA Department of Electrical Engineering and the Department of Computer Science University of Stanford Stanford CA USA

Carbon nanotube field-effect transistors (CNFETs) are excellent candidates for building highly energy-efficient electronic systems of the future. Fundamental limitations inherent to carbon nanotubes (CNTs) pose major obstacles to the realization of robust CNFET digital very large-scale integration (VLSI): 1) it is nearly impossible to guarantee perfect alignment and positioning of all CNTs despite near-perfect CNT alignment achieved in recent years; 2) CNTs can be metallic or semiconducting depending on chirality; and 3) CNFET circuits can suffer from large performance variations, reduced yield, and increased susceptibility to noise. Today's CNT process improvements alone are inadequate to overcome these challenges. This paper presents an overview of: 1) imperfections and variations inherent to CNTs; 2) design and processing techniques, together with a probabilistic analysis framework, for robust CNFET digital VLSI circuits immune to inherent CNT imperfections and variations; and 3) recent experimental demonstration of CNFET digital circuits that are immune to CNT imperfections. Significant advances in design tools can enable robust and scalable CNFET circuits that overcome the challenges of the CNFET technology while retaining its energy-efficiency benefits.

关键词： CNTFETs Logic gates Very large scale integration Delay Optimization Integrated circuit modeling

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Publisher's Note: “Phase locking of a 3.4 THz third-order distributed feedback quantum cascade laser using a room-temperature superlattice harmonic mixer” [Appl. Phys. Lett. 103, 051115 (2013)]

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Applied Physics Letters 2013年第10期103卷

作者： D. J. Hayton A. Khudchenko D. G. Pavelyev J. N. Hovenier A. Baryshev J. R. Gao T. Y. Kao Q. Hu J. L. Reno V. Vaks SRON Netherlands Institute for Space Research 9474 AD Groningen The Netherlands Lobachevskii State University of Nizhny Novgorod Nizhny Novgorod 603950 Russia Kavli Institute of Nanoscience Delft University of Technology Lorentzweg 1 2628 CJ Delft The Netherlands Research Laboratory of Electronics Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology MIT Cambridge Massachusetts 02139 USA CINT Sandia National Laboratories Albuquerque New Mexico 87185-0601 USA Institute for Physics of Microstructures Russian Academy of Sciences Nizhny Novgorod 603950 Russia

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The best material for the function: Seamless on-wafer integration of GaN and Si devices

The best material for the function: Seamless on-wafer integr...

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2011 International Conference on Compound Semiconductor Manufacturing technology, CS MANTECH 2011

作者： Lee, Hyung-Seok Ryu, Kevin Chung, Jinwook Palacios, Tomás Department of Electrical Engineering and Computer Science Microsystems Technology Laboratories Massachusetts Institute of Technology 77 Massachusetts Ave. Cambridge MA 02139 United States

ISBN: (纸本)1893580172

The recent demonstration of the seamless on-wafer integration of GaN electronics and CMOS Si devices enables the combination of the excellent high voltage and high frequency properties of GaN transistors with the unsurpassed circuit complexity and scaling of Si technology. This paper describes our recent results to expand this heterogeneous integration from the initial 1x1 cm2 demonstration to full 4" wafers that integrate hybrid power, mixed signal and digital circuits.

关键词： III-V semiconductors

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Physical Characterization of Microelectronic Polymeric Thin Films

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MRS Online Proceedings Library 2011年第1期227卷 167-176页

作者： Stephen D. Senturia Susan C. Noe Jeffrey Y. Pan Microsystems Technology Laboratories Department of Electrical Engineering and Computer Science Cambridge USA

The measurement of the mechanical properties and adhesion of polymeric thin films and coatings poses a number of technical problems. Elastic and viscoelastic properties, residual stress, adhesion, the effects of extended cure, and the effects of adsorbed moisture and process reagents are all critical. A particular challenge is to develop measurement methods which can be used with actual samples, preferably non-destructively. This paper examines a number of methods which have been developed to make these measurements, with emphasis on methods which are sensitive enough to look at the effects of process variation and the effects of moisture exposure. Suspended-membrane methods for measuring elastic and viscoelastic properties, residual stress, and adhesion are combined with optical methods for determining index of refraction and birefringence to yield a family of techniques for performing physical characterization. Recent results on the effects of extended cure and moisture uptake on elastic properties, residual stress, and optical properties will be presented.

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