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2007 International Solid-State Sensors, Actuators and microsystems Conference (TRANSDUCERS 2007), vol.5

作者： L. F. Velasquez-Garcia A. I. Akinwande Microsystems Technologies Laboratories Massachusetts Institute of Technology Cambridge MA USA Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology Cambridge MA USA

This paper reports the design, fabrication and characterization of a hand-assembled out-of-plane MEMS quadrupole mass filter. The device utilizes a 3D packaging technology that relies on mesoscale DRIE-patterned deflection springs for assembly. Microfabricated quadrupoles with 1.58mm down to 0.56mm diameter rods and 30 to 60 aspect ratios were built and tested. The quadrupoles were characterized in the first stability region at an RF frequency of 1.44 MHz, using a constant peak width sweeping method, obtaining a dynamic range of 650 amu and a half-peak width of 2 amu. Better performance is expected if a higher RF frequency is used.

关键词： Mass filter Out-of-plane quadrupole Portable mass spectrometry

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A Novel anti-reflecton coated FP laser amplifier for 2.5Gbit/s DWDM-PON transmission

A Novel anti-reflecton coated FP laser amplifier for 2.5Gbit...

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Photonic Applications Systems Technologies Conference, PhAST 2007

作者： Liao, Yu-Sheng Chen, Yung-Jui Huang, Yin-Hsun Wang, Hai-Lin Ko, Sun-Chien Lin, Gong-Cheng Lin, Gong-Ru Department of Photonics and Institute of Electro-Optical Engineering National Chiao Tung University 1001 Ta Hsueh Road Hsinchu 300 Taiwan Department of Computer Science and Electrical Engineering University of Maryland Baltimore County 1000 Hilltop Circle Baltimore MD 21250 Maryland United States Telecommunication Laboratories Advanced Technology Laboratory 12 Lane 551 Min-Tsu Road Sec.5 Yang-Mei Taoyuan Taiwan Graduate Institute of Electro-Optical Engineering Department of Electrical Engineering National Taiwan University No.1 Sec. 4 Roosevelt Road Taipei 106 Taiwan

A novel anti-reflection coated Fabry-Perot laser amplifier under side-mode injection-locking for 2.5Gbit/s DWDM-PON is demonstrated with SMSR >35dB, Q-factor 9.2, locking range of 30nm, power penalty of -0.7dB, and... 详细信息

ISBN: (纸本)1557528349

关键词： Passive optical networks

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Changes in the editorial board

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IEEE Transactions on Semiconductor Manufacturing 2006年第4期19卷 369-369页

作者： Boning, Duane S. Microsystems Technology Laboratories Department of Electrical Engineering and Computer Science Cambridge MA 02139 United States

No abstract available

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Guest Editorial price-based access control and economics of networking

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IEEE Journal on Selected Areas in Communications 2006年第5期24卷 937-938页

作者： Mazumdar, Ravi R. Courcoubetis, Costas A. Duffield, Nick Kesidis, George Odlyzko, Andrew Srikant, R. Walrand, Jean University of Waterloo Department of Electrical and Computer Engineering Waterloo Ont. N2L 3G1 Canada Athens University of Economics and Business Department of Informatics Athens 10434 Greece AT and T Laboratories Florham Park NJ 07932-0971 United States Pennsylvania State University Department of Electrical and Computer Engineering University Park PA 16802 United States University of Minnesota Digital Technology Center Minneapolis MN 55455 United States University of Illinois at Urbana-Champaign Coordinated Science Laboratory Urbana IL 61801 United States University of California at Berkeley Department of Electrical Engineering and Computer Sciences Berkeley CA 94720 United States Department of Electrical and Computer Engineering University of Waterloo Waterloo Ont. Canada Department of Electrical and Computer Engineering Purdue University West Lafayette IN United States Royal Statistical Society Canada Canada Canada Canada Network Economics and Services Group Theory Economics and Systems Laboratory Athens University of Economics and Business Athens Greece Network Management and Performance Department AT and T Laboratories-Research Florham Park NJ United States Electrical Engineering and Computer Science and Engineering Departments Pennsylvania State University University Park United States Digital Technology Center United States University of Minnesota Minneapolis United States University of Illinois Urbana-Champaign United States Department of Electrical and Computer Engineering Canada Coordinated Science Laboratory United States Department of Electrical Engineering and Computer Sciences University of California at Berkeley Berkeley United States Belgian American Education Foundation United States

No abstract available

关键词： Access control Pricing Web and internet services IP networks Optimal control Quality of service Impedance History Internet telephony Convergence

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A microfabricated electrospray thruster using ridge emitters and ceramic-ball extractor location

A microfabricated electrospray thruster using ridge emitters...

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AIAA/ASME/SAE/ASEE 42nd Joint Propulsion Conference

作者： Gassend, B. Velásques-García, L.F. Lozano, P.C. Akinwande, A.I. Martínez-Sánchez, M. Massachusetts Institute of Technology Cambridge MA 02139 United States MIT Department of Electrical Engineering and Computer Science 32 Vassar Street Cambridge MA 02139 United States AIAA United States MIT Department of Aeronautics and Astronautics Microsystems Technology Laboratories 77 Massachusetts Avenue Cambridge MA 02139 United States MIT Department of Aeronautics and Astronautics 77 Massachusetts Avenue Cambridge MA 02139 United States Department of Electrical Engineering and Computer Science 77 Massachusetts Avenue Cambridge MA 02139 United States Department of Aeronautics and Astronautics 77 Massachusetts Avenue Cambridge MA 02139 United States

ISBN: (纸本)1563478188

We describe the fabrication and testing of an 1 cm by 1 cm microfabricated externally wetted electrospray thruster, which uses the ionic liquid EMI-BF4 as a propellant. In an electrospray thruster, an electrostatic field is used to extract ions or charged droplets from a liquid placed at the tip of a needle, and accelerate them. The novelty of our design is in the use of microfabricated ridges with regularly spaced tips as emitters, as well as the use of ceramic balls to position the extractor grid relative to the emitters and ensure electrical insulation. After describing the design of the thruster, we present the test firings we have done to date. In these tests, emission starts around 2 kV. To the best of our knowledge, this is the first time an externally wetted electrospray thruster has been fired with an integrated extractor electrode. Emission patterns gathered by firing into an aluminum plate show that the tips placed along the ridge allow emission to occur at multiple points along the ridge;without the tips, emission only occurs at the ends of the ridges.

关键词： Electrostatics

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Silicon electronic photonic integrated circuits for high speed analog to digital conversion

Silicon electronic photonic integrated circuits for high spe...

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作者： Kärtner, F.X. Amataya, R. Barbastathis, G. Byun, H. Gan, F. Holzwarth, C.W. Hoyt, J.L. Ippen, E.P. Olubuyide, O.O. Orcutt, J.S. Park, M. Perrott, M. Popović, M.A. Rakich, P.T. Ram, R.J. Smith, H.I. Geis, M. Grein, M. Lyszczarz, T. Spector, S. Yoon, J.U. Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology 77 Massachusetts Avenue Cambridge MA 02139 United States bResearch Laboratory of Electronics Massachusetts Institute of Technology 77 Massachusetts Avenue Cambridge MA 02139 United States Department of Mechanical Engineering Massachusetts Institute of Technology 77 Massachusetts Avenue Cambridge MA 02139 United States Department of Material Science and Engineering Massachusetts Institute of Technology 77 Massachusetts Avenue Cambridge MA 02139 United States Microsystems Technology Laboratories Massachusetts Institute of Technology 77 Massachusetts Avenue Cambridge MA 02139 United States Department of Physics Massachusetts Institute of Technology 77 Massachusetts Avenue Cambridge MA 02139 United States Lincoln Laboratory Massachusetts Institute of Technology 244 Wood St. Lexington MA 02420 United States

Integrated optical components on the silicon platform and optically enhanced electronic sampling circuits are demonstrated that enable the fabrication of a variety of electronic-photonic A/D converter chips surpassing... 详细信息

关键词： Analog to digital conversion

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Silicon Electronic Photonic Integrated Circuits for High Speed Analog to Digital Conversion

Silicon Electronic Photonic Integrated Circuits for High Spe...

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IEEE International Conference on Group IV Photonics

作者： F.X. Kartner R. Amataya G. Barbastathis H. Byun F. Gan C.W. Holzwarth J.L. Hoyt E.P. Ippen O.O. Olubuyide J.S. Orcutt M. Park M. Perrott M.A. Popovic P.T. Rakich R.J. Ram H.I. Smith M. Geis M. Grein T. Lyszczarz S. Spector J.U. Yoon Lincoln Laboratory Massachusetts Institute of Technology Lexington MA USA Department of Mechanical Engineering Massachusetts Institute of Technology Cambridge MA Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology Cambridge MA Research Laboratory of Electronics Massachusetts Institute of Technology Cambridge MA Microsystems Technology Laboratories Massachusetts Institute of Technology Cambridge MA Department of Mechanical Engineering Massachusetts Institute of Technology Cambridge MA USA Research Laboratory of Electronics Massachusetts Institute of Technology Cambridge MA USA

ISBN: (纸本)1424400953

关键词： Silicon Photonic integrated circuits Analog-digital conversion Filter bank Optical filters Sampling methods High speed optical techniques Optical feedback Ultrafast optics Wavelength division multiplexing

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100-nm cascaded hybrid doped fiber amplifier for coarse wavelength division multiplexing

100-nm cascaded hybrid doped fiber amplifier for coarse wave...

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Optical Fiber Communication Conference, OFC 2006

作者： Yam, S.-H. Akasaka, Y. Kubota, Y. Inoue, H. Department of Electrical and Computer Engineering Queen's University Walter Light Hall Kingston ON K7L 3N6 Canada Sprint Advanced Technology Laboratories 30 Adrian Court Burlingame CA 94010 United States Central Glass Co. Ltd. Kowa-Hitotsubashi Bldg. 3-7-1 Kanda-Hishikicho Chiyoda-ku Tokyo 101-0054 Japan Institute of Industrial Science University of Tokyo 4-6-1 Komaba Meguro-ku Tokyo 153-8505 Japan

A hybrid amplifier spanning from 1468-1568nm is constructed by cascading a Thulium-doped fiber amplifier pumped at 690nm and 1400nm and a Cerium co-doped high concentration wideband Erbium-doped fiber amplifier. &#169... 详细信息

ISBN: (纸本)1557528020

关键词： Erbium doped fiber amplifiers

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Novel pumping scheme study for fluoride-based thulium-doped fiber amplifier at 690 nm

Novel pumping scheme study for fluoride-based thulium-doped ...

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Optical Fiber Communication Conference, OFC 2006

作者： Yam, S.S.-H. Akasaka, Y. Kubota, Y. Inoue, H. Parameswaran, K. Department of Electrical and Computer Engineering Queen's University Walter Light Hall Kingston ON K7L 3N6 Canada Sprint Advanced Technology Laboratories 30 Adrian Court Burlingame CA 94010 United States Central Glass Co. Ltd Kowa-Hitotsubashi Bldg. 3-7-1 Kanda-Hishikicho Chiyoda-ku Tokyo 101-0054 Japan Institute of Industrial Science University of Tokyo 4-6-1 Komaba Meguro-ku Tokyo 153-8505 Japan JDS Uniphase Laser Optics and Display Products 2789 Northpoint Parkway Santa Rosa CA 95407 United States

Simultaneous pumping of thulium-doped fiber amplifier (TDFA) with 690nm and 1050nm (or 1400nm) is highly efficient and cost-competitive due to availability of 690nm digital video disk (DVD) laser diodes. © 2004 O... 详细信息

ISBN: (纸本)1557528020

关键词： Pumping (laser)

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Thermal processing and mobility in strained heterostructures on insulator

Thermal processing and mobility in strained heterostructures...

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207th ECS Meeting

作者： Åberg, Ingvar Chléirigh, Cáit Ní Hoyt, Judy L. Microsystems Technology Laboratories Department of Electrical Engineering and Computer Science MIT 60 Vassar St. Cambridge MA 02139 United States

Strain is used in mainstream CMOS production to enhance device performance at the 90 nm node. Strained Si and novel material implementations in fully depleted silicon-on-insulator and multi-gate configurations are of interest for sub-45-nm applications where there is a need to improve electron and hole mobilities while also providing the electrostatic control necessary for continued geometric device scaling. Implementations of strained Si and strained heterostructures on insulator are reviewed. The Ge-free strained silicon directly on insulator structure has good thermal stability, high electron mobility and improved hole mobilities in particular at low vertical effective electrical fields. In addition, such wafers can readily be incorporated in existing fully or partially depleted silicon on insulator processes. Strained Si/strained SiGe/strained Si heterostructures on insulator provide higher hole mobilities. Simultaneous electron and hole mobility enhancements of 2X at all effective fields are demonstrated in fully-depleted heterostructure on insulator MOSFETs. Thermal budget constraints for processing such devices, particularly with respect to Ge diffusion, are discussed.

关键词： Heterojunctions

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