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Applied Physics Letters 2021年第12期119卷

作者： Shelby S. Fields David H. Olson Samantha T. Jaszewski Chris M. Fancher Sean W. Smith Diane A. Dickie Giovanni Esteves M. David Henry Paul S. Davids Patrick E. Hopkins Jon F. Ihlefeld 1Department of Materials Science and Engineering University of Virginia Charlottesville Virginia 22904 USA 2Department of Mechanical and Aerospace Engineering University of Virginia Charlottesville Virginia 22904 USA 3Materials Science and Technology Division Oak Ridge National Laboratory Oak Ridge Tennessee 37831 USA 4Sandia National Laboratories Albuquerque New Mexico 87185 USA 5Department of Chemistry University of Virginia Charlottesville Virginia 22904 USA 6Deparment of Physics University of Virginia Charlottesville Virginia 22904 USA 7Charles L. Brown Department of Electrical and Computer Engineering University of Virginia Charlottesville Virginia 22904 USA

The following Erratum has been prepared by the authors:

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Solution-Processed High-Voltage Organic Thin Film Transistor

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Solution-Processed High-Voltage Organic Thin Film Transistor

MRS Advances

作者： Shih, Andy Akinwande, Akintunde Ibitayo Electrical Engineering and Computer Science Department Microsystems Technology Laboratories Massachusetts Institute of Technology CambridgeMA02141 United States

A 6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) based high-voltage organic thin film transistor (HVOTFT) has been demonstrated via a low temperature (2 V-1 s-1 and a breakdown voltage of VDS > 120 V, the latter being due a space-charge limiting device architecture in which the channel is partially gated. Non-saturating I-V characteristic behavior was observed. This is in contrast with our vacuum-deposited pentacene HVOTFTs which exhibited breakdown voltages of VDS > 400 V. TIPS-pentacene was grown via a drop-casting deposition, with its crystallinity and grain size deduced under XRD and SEM analysis. The HVOTFT was fabricated with a dielectric stack of a high-k Bi1.5Zn1Nb1.5O7 (BZN) and parylene-C. © Materials Research Society 2017.

关键词： Thin films

Size effect on memristive properties of nanocrystalline ZnO film for resistive synaptic devices

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Size effect on memristive properties of nanocrystalline ZnO ...

5th International School and Conference on Optoelectronics, Photonics, engineering and Nanostructures, Saint Petersburg OPEN 2018

作者： Shandyba, N.A. Panchenko, I.V. Tominov, R.V. Smirnov, V.A. Pelipenko, M.I. Zamburg, E.G. Chu, Y.H. Department of Nanotechnology and Microsystems Southern Federal University Taganrog347928 Russia UAC Company BERIEV Taganrog347923 Russia Department of Electrical and Computer Engineering National University of Singapore Singapore117582 Singapore Department of Materials Science and Engineering National Chiao Tung University Hsinchu1001 Taiwan Department of Electrophysics National Chiao Tung University Hsinchu1001 Taiwan Institute of Physics Academia Sinica Taipei11529 Taiwan Material and Chemical Research Laboratories Industrial Technology Research Institute Hsinchu31040 Taiwan

Size effect on memristive properties of nanocrystalline ZnO film was investigated. It was shown, ZnO film thickness increase from 6.23±1.54 nm to 47.60±8.12 nm leads to high-resistance state (HRS) increase from 3.26±2.14 M to 700.32±300.83 M and low-resistance state (LRS) from 0.03±0.02 M to 0.09±0.03 M, respectively. The HRS/LRS ratio increases from 108 to 7742. The results can be useful for based on nanocrystalline ZnO films resistive synaptic devices manufacturing. © Published under licence by IOP Publishing Ltd.

关键词： II-VI semiconductors

Achieving a quantum smart workforce

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arXiv 2020年

作者： Aiello, Clarice D. Awschalom, D.D. Bernien, Hannes Brower-Thomas, Tina Brown, Kenneth R. Brun, Todd A. Caram, Justin R. Chitambar, Eric Di Felice, Rosa Fox, Michael F.J. Haas, Stephan Holleitner, Alexander W. Hudson, Eric R. Hunt, Jeffrey H. Joynt, Robert Koziol, Scott Lewandowski, H.J. McClure, Douglas T. Palsberg, Jens Passante, Gina Pudenz, Kristen L. Richardson, Christopher J.K. Rosenberg, Jessica L. Ross, R.S. Saffman, Mark Singh, M. Steuerman, David W. Stark, Chad Thijssen, Jos Vamivakas, A. Nick Whitfield, James D. Zwickl, Benjamin M. Department of Electrical and Computer Engineering University of California Los Angeles Los AngelesCA90095 United States Pritzker School of Molecular Engineering University of Chicago ChicagoIL60637 United States Department of Physics University of Chicago ChicagoIL60637 United States Center for Molecular Engineering and Materials Science Division Argonne National Laboratory LemontIL60439 United States Howard University Graduate School WashingtonDC20059 United States Center for Integrated Quantum Materials Howard University PI WashingtonDC20059 United States Departments of Electrical and Computer Engineering Chemistry and Physics Duke University DurhamNC27708 United States Department of Electrical and Computer Engineering University of Southern California Los AngelesCA90089 United States UCLA Department of Chemistry and Biochemistry Center for Quantum Science and Engineering University of California – Los Angeles Los AngelesCA90095 United States Department of Electrical and Computer Engineering University of Illinois Urbana-ChampaignIL61801 United States Department of Physics and Astronomy University of Southern California Los AngelesCA90089 United States JILA National Institute of Standards and Technology University of Colorado BoulderCO80309 United States Department of Physics University of Colorado BoulderCO80309 United States Department of Physics and Astronomy University of Southern California Los AngelesCA90089 United States Garching85748 Germany UCLA Center for Quantum Science and Engineering University of California – Los Angeles Los AngelesCA90095 United States Boeing Company El SegundoCA90245 United States Department of Physics University of Wisconsin-Madison MadisonWI53706 United States Department of Electrical and Computer Engineering Baylor University WacoTX76798 United States Department of Physics University of Colorado BoulderCO80309 United States IBM T.J. Watson Research Center Yorktown HeightsNY

Interest in building dedicated Quantum Information science and engineering (QISE) education programs has greatly expanded in recent years. These programs are inherently convergent, complex, often resource intensive and likely require collaboration with a broad variety of stakeholders. In order to address this combination of challenges, we have captured ideas from many members in the community. This manuscript not only addresses policy makers and funding agencies (both public and private and from the regional to the international level) but also contains needs identified by industry leaders and discusses the difficulties inherent in creating an inclusive QISE curriculum. We report on the status of eighteen post-secondary education programs in QISE and provide guidance for building new programs. Lastly, we encourage the development of a comprehensive strategic plan for quantum education and workforce development as a means to make the most of the ongoing substantial investments being made in QISE. Copyright © 2020, The Authors. All rights reserved.

关键词： Personnel

Integrated micro-comb sources for quantum optical applications

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arXiv 2020年

作者： Kues, Michael Reimer, Christian Lukens, Joseph M. Munro, William J. Weiner, Andrew M. Moss, David J. Morandotti, Roberto School of Engineering University of Glasgow Rankine Building Oakfield Avenue GlasgowG12 8LT United Kingdom Department of Engineering Aarhus University Finlandsgade 22 Aarhus N8200 Denmark John A. Paulson School of Engineering and Applied Sciences Harvard University Cambridge02138 United States Quantum Information Science Group Computational Sciences and Engineering Division Oak Ridge National Laboratory Oak RidgeTN37831 United States NTT Basic Research Laboratories NTT Research Center for Theoretical Quantum Physics NTT Corporation Kanagawa Japan National Institute of Informatics Tokyo Japan School of Electrical and Computer Engineering Purdue Quantum Center Purdue University West LafayetteIN47907 United States Centre for Micro Photonics Swinburne University of Technology HawthornVIC3122 Australia 1650 Blvd. Lionel-Boulet VarennesJ3X1S2 Canada Institute of Fundamental and Frontier Sciences University of Electronic Science and Technology of China Chengdu610054 China ITMO University St Petersburg Russia

A key challenge for quantum science and technology is to realise large-scale, precisely controllable, practical systems for non-classical secured communications, metrology and ultimately meaningful quantum simulation and computation. Optical frequency combs represent a powerful approach towards this, since they provide a very high number of temporal and frequency modes which can result in large-scale quantum systems. The generation and control of quantum optical frequency combs will enable a unique, practical and scalable framework for quantum signal and information processing. Here, we review recent progress on the realization of energy-time entangled optical frequency combs and discuss how photonic integration and the use of fiber-optic telecommunications components can enable quantum state control with new functionalities, yielding unprecedented capability. Copyright © 2020, The Authors. All rights reserved.

关键词： Quantum optics

Common Limitations of Image Processing Metrics: A Picture Story

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arXiv 2021年

作者： Reinke, Annika Tizabi, Minu D. Sudre, Carole H. Eisenmann, Matthias Rädsch, Tim Baumgartner, Michael Acion, Laura Antonelli, Michela Arbel, Tal Bakas, Spyridon Bankhead, Peter Benis, Arriel Blaschko, Matthew Buettner, Florian Cardoso, M. Jorge Chen, Jianxu Cheplygina, Veronika Christodoulou, Evangelia Cimini, Beth A. Collins, Gary S. Engelhardt, Sandy Farahani, Keyvan Ferrer, Luciana Galdran, Adrian van Ginneken, Bram Glocker, Ben Godau, Patrick Haase, Robert Hamprecht, Fred Hashimoto, Daniel A. Heckmann-Nötzel, Doreen Hirsch, Peter Hoffman, Michael M. Huisman, Merel Isensee, Fabian Jannin, Pierre Kahn, Charles E. Kainmueller, Dagmar Kainz, Bernhard Karargyris, Alexandros Karthikesalingam, Alan Kavur, A. Emre Kenngott, Hannes Kleesiek, Jens Kleppe, Andreas Koehler, Sven Kofler, Florian Kopp-Schneider, Annette Kooi, Thijs Kozubek, Michal Kreshuk, Anna Kurc, Tahsin Landman, Bennett A. Litjens, Geert Madani, Amin Maier-Hein, Klaus Martel, Anne L. Mattson, Peter Meijering, Erik Menze, Bjoern Moher, David Moons, Karel G.M. Müller, Henning Nichyporuk, Brennan Nickel, Felix Noyan, M. Alican Petersen, Jens Polat, Gorkem Rafelski, Susanne M. Rajpoot, Nasir Reyes, Mauricio Rieke, Nicola Riegler, Michael A. Rivaz, Hassan Saez-Rodriguez, Julio Sánchez, Clara I. Schroeter, Julien Saha, Anindo Selver, M. Alper Sharan, Lalith Shetty, Shravya Smeden, Maarten V.A.N. Stieltjes, Bram Summers, Ronald M. Taha, Abdel A. Tiulpin, Aleksei Tsaftaris, Sotirios A. Calster, Ben V.A.N. Varoquaux, Gaël Wiesenfarth, Manuel Yaniv, Ziv R. Jäger, Paul Maier-Hein, Lena Division of Intelligent Medical Systems and HI Helmholtz Imaging Heidelberg Germany Faculty of Mathematics and Computer Science Heidelberg University Heidelberg Germany Division of Intelligent Medical Systems Heidelberg Germany NCT Heidelberg DKFZ University Medical Center Heidelberg Germany MRC Unit for Lifelong Health and Ageing UCL Centre for Medical Image Computing Department of Computer Science University College London London United Kingdom School of Biomedical Engineering and Imaging Science King’s College London London United Kingdom Division of Medical Image Computing Heidelberg Germany Instituto de Cálculo CONICET – Universidad de Buenos Aires Buenos Aires Argentina Centre for Medical Image Computing University College London London United Kingdom McGill University Montréal Canada Division of Computational Pathology Dept of Pathology & Laboratory Medicine Indiana University School of Medicine IU Health Information and Translational Sciences Building Indianapolis United States University of Pennsylvania Richards Medical Research Laboratories FL7 PhiladelphiaPA United States Institute of Genetics and Cancer University of Edinburgh Edinburgh United Kingdom Department of Digital Medical Technologies Holon Institute of Technology Holon Israel European Federation for Medical Informatics Le Mont-sur-Lausanne Switzerland Center for Processing Speech and Images Department of Electrical Engineering KU Leuven Kasteelpark Arenberg 10 - box 2441 Leuven3001 Belgium Frankfurt/Mainz DKFZ UCT Frankfurt-Marburg Germany Heidelberg Germany Goethe University Frankfurt Department of Medicine Germany Goethe University Frankfurt Department of Informatics Germany Frankfurt Cancer Insititute Germany Leibniz-Institut für Analytische Wissenschaften – ISAS – e.V. Dortmund Germany Department of Computer Science IT University of Copenhagen Copenhagen Denmark Imaging Platform Broad Institute of MIT and Harvard CambridgeMA United States Centre for St

While the importance of automatic image analysis is continuously increasing, recent meta-research revealed major flaws with respect to algorithm validation. Performance metrics are particularly key for meaningful, objective, and transparent performance assessment and validation of the used automatic algorithms, but relatively little attention has been given to the practical pitfalls when using specific metrics for a given image analysis task. These are typically related to (1) the disregard of inherent metric properties, such as the behaviour in the presence of class imbalance or small target structures, (2) the disregard of inherent data set properties, such as the non-independence of the test cases, and (3) the disregard of the actual biomedical domain interest that the metrics should reflect. This living dynamically document has the purpose to illustrate important limitations of performance metrics commonly applied in the field of image analysis. In this context, it focuses on biomedical image analysis problems that can be phrased as image-level classification, semantic segmentation, instance segmentation, or object detection task. The current version is based on a Delphi process on metrics conducted by an international consortium of image analysis experts from more than 60 institutions worldwide. © 2021, CC BY.

关键词： Medical imaging

Eavesdropper's ability to attack a free-space quantum-key-distribution receiver in atmospheric turbulence

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Physical Review A 2019年第6期99卷 062315-062315页

作者： Poompong Chaiwongkhot Katanya B. Kuntz Yanbao Zhang Anqi Huang Jean-Philippe Bourgoin Shihan Sajeed Norbert Lütkenhaus Thomas Jennewein Vadim Makarov Institute for Quantum Computing University of Waterloo Waterloo ON Canada N2L 3G1 Department of Physics and Astronomy University of Waterloo Waterloo ON Canada N2L 3G1 NTT Basic Research Laboratories NTT Corporation Atsugi Kanagawa 243-0198 Japan NTT Research Center for Theoretical Quantum Physics NTT Corporation Atsugi Kanagawa 243-0198 Japan Institute for Quantum Information and State Key Laboratory of High Performance Computing College of Computer National University of Defense Technology Changsha 410073 People's Republic of China Department of Electrical and Computer Engineering University of Waterloo Waterloo ON Canada N2L 3G1 Aegis Quantum Waterloo ON Canada Department of Electrical and Computer Engineering University of Toronto Toronto Canada M5S 3G4 Quantum Information Science Program Canadian Institute for Advanced Research Toronto ON Canada M5G 1Z8 Russian Quantum Center Skolkovo Moscow 143025 Russia Shanghai Branch National Laboratory for Physical Sciences at Microscale and CAS Center for Excellence in Quantum Information University of Science and Technology of China Shanghai 201315 People's Republic of China NTI Center for Quantum Communications National University of Science and Technology MISiS Moscow 119049 Russia

The ability of an eavesdropper (Eve) to perform an intercept-resend attack on a free-space quantum-key-distribution (QKD) receiver by precisely controlling the incidence angle of an attack laser has been previously demonstrated. However, such an attack could be ineffective in the presence of atmospheric turbulence due to beam wander and spatial mode aberrations induced by the air's varying index of refraction. We experimentally investigate the impact turbulence has on Eve's attack on a free-space polarization-encoding QKD receiver by emulating atmospheric turbulence with a spatial light modulator. Our results identify how well Eve would need to compensate for turbulence to perform a successful attack by either reducing her distance to the receiver or using beam wavefront correction via adaptive optics. Furthermore, we use an entanglement-breaking scheme to find a theoretical limit on the turbulence strength that hinders Eve's attack.

关键词： Quantum cryptography

Lattice-mismatched semiconductor heterostructures

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arXiv 2018年

作者： Liu, Dong Cho, Sang June Seo, Jung-Hun Kim, Kwangeun Kim, Munho Shi, Jian Yin, Xin Choi, Wonsik Zhang, Chen Kim, Jisoo Baboli, Mohadeseh A. Park, Jeongpil Bong, Jihye Lee, In-Kyu Gong, Jiarui Mikael, Solomon Ryu, Jae Ha Mohseni, Parsian K. Li, Xiuling Gong, Shaoqin Wang, Xudong Ma, Zhenqiang Department of Electrical and Computer Engineering University of Wisconsin –Madison MadisonWI53706 United States Department of Materials Science and Engineering University of Wisconsin –Madison MadisonWI United States Department of Electrical and Computer Engineering University of Illinois – Urbana Champaign ChampaignIL61820 United States Microsystems Engineering and NanoPower Research Laboratories Rochester Institute of Technology RochesterNY14623 United States Department of Biomedical Engineering University of Wisconsin –Madison MadisonWI United States

Semiconductor heterostructure is a critical building block for modern semiconductor devices. However, forming semiconductor heterostructures of lattice-mismatch has been a great challenge for several decades. Epitaxial growth is infeasible to form abrupt heterostructures with large lattice-mismatch while mechanical-thermal bonding results in a high density of interface defects and therefore severely limits device applications. Here we show an ultra-thin oxide-interfaced approach (named as "grafting") for the successful formation of lattice-mismatched semiconductor heterostructures. Following the depiction of a theory on the role of interface oxide in forming the heterostructures, we describe experimental demonstrations of Ge/Si (diamond lattices), Si/GaAs (zinc blende lattice), GaAs/GaN (hexagon lattice), and Si/GaN heterostructures. Extraordinary electrical performances in terms of ideality factor, current on/off ratio, and reverse breakdown voltage are measured from p-n diodes fabricated from the four types of heterostructures, significantly outperforming diodes derived from other methods. Our demonstrations indicate the versatility of the ultra-thin-oxide-interface approach in forming lattice-mismatched heterostructures, open up a much larger possibility for material combinations for heterostructures, and pave the way toward broader applications in electronic and optoelectronic realms. Copyright © 2018, The Authors. All rights reserved.

关键词： Heterojunctions

Eavesdropper’s ability to attack a free-space quantum-key-distribution receiver in atmospheric turbulence

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arXiv 2019年

作者： Chaiwongkhot, Poompong Kuntz, Katanya B. Zhang, Yanbao Huang, Anqi Bourgoin, Jean-Philippe Sajeed, Shihan Lütkenhaus, Norbert Jennewein, Thomas Makarov, Vadim Institute for Quantum Computing University of Waterloo WaterlooONN2L 3G1 Canada Department of Physics and Astronomy University of Waterloo WaterlooONN2L 3G1 Canada NTT Basic Research Laboratories NTT Corporation AtsugiKanagawa Japan NTT Research Center for Theoretical Quantum Physics NTT Corporation AtsugiKanagawa Japan Institute for Quantum Information & State Key Laboratory of High Performance Computing College of Computer National University of Defense Technology Changsha410073 China Department of Electrical and Computer Engineering University of Waterloo WaterlooONN2L 3G1 Canada Aegis Quantum WaterlooON Canada Department of Electrical and Computer Engineering University of Toronto M5S 3G4 Canada Quantum Information Science Program Canadian Institute for Advanced Research TorontoONM5G 1Z8 Canada Russian Quantum Center Skolkovo Moscow143025 Russia Shanghai Branch National Laboratory for Physical Sciences at Microscale and CAS Center for Excellence in Quantum Information University of Science and Technology of China Shanghai201315 China NTI Center for Quantum Communications National University of Science and Technology MISiS Moscow119049 Russia

The ability of an eavesdropper (Eve) to perform an intercept-resend attack on a free-space quantum key distribution (QKD) receiver by precisely controlling the incidence angle of an attack laser has been previously demonstrated. However, such an attack could be ineffective in the presence of atmospheric turbulence due to beam wander and spatial mode aberrations induced by the air’s varying index of refraction. We experimentally investigate the impact turbulence has on Eve’s attack on a free-space polarization-encoding QKD receiver by emulating atmospheric turbulence with a spatial light modulator. Our results identify how well Eve would need to compensate for turbulence to perform a successful attack by either reducing her distance to the receiver, or using beam wavefront correction via adaptive optics. Furthermore, we use an entanglement-breaking scheme to find a theoretical limit on the turbulence strength that hinders Eve’s attack. Copyright © 2019, The Authors. All rights reserved.

关键词： Atmospheric turbulence

CMOS-Integrated diamond nitrogen-vacancy quantum sensor

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arXiv 2018年

作者： Kim, Donggyu Ibrahim, Mohamed I. Foy, Christopher Trusheim, Matthew E. Han, Ruonan Englund, Dirk Research Laboratory of Electronics Massachusetts Institute of Technology 50 Vassar St CambridgeMA02139 United States Department of Mechanical Engineering Massachusetts Institute of Technology 77 Mass Ave CambridgeMA02139 United States Microsystems Technology Laboratories Massachusetts Institute of Technology 60 Vassar Street CambridgeMA02139 United States Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology 50 Vassar St CambridgeMA02139 United States

The nitrogen vacancy (NV) center in diamond has emerged as a leading solid-state quantum sensor for applications including magnetometry, electrometry, thermometry, and chemical sensing. However, an outstanding challenge for practical applications is that existing NV-based sensing techniques require bulky and discrete instruments for spin control and detection. Here, we address this challenge by integrating NV based quantum sensing with complementary metal-oxide-semiconductor (CMOS) technology. Through tailored CMOS-integrated microwave generation and photodetection, this work dramatically reduces the instrumentation footprint for quantum magnetometry and thermometry. This hybrid diamond-CMOS integration enables an ultra-compact and scalable platform for quantum sensing and quantum information processing. Copyright © 2018, The Authors. All rights reserved.

关键词： Diamonds