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High-speed doctor-blading PM 6:L 8-BO organic solar cells from non-halogenated green solvent with a module efficiency of 16.07%

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Journal of Central South University 2024年第12期31卷 4297-4306页

作者： FENG Er-ming ZHANG Chu-jun HAN Yun-fei CHANG Jian-hui YANG Fang LI Heng-yue LUO Qun MA Chang-qi ZOU Ying-ping DING Li-ming YANG Jun-liang Hunan Key Laboratory for Super-microstructure and Ultrafast Process School of PhysicsCentral South UniversityChangsha 410083China i-Lab&Printable Electronics Research Center Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China College of Chemistry and Chemical Engineering Central South UniversityCentral South UniversityChangsha 410083China Center for Excellence in Nanoscience Key Laboratory of Nanosystem and Hierarchical Fabrication(CAS)National Center for Nanoscience and TechnologyBeijing 100190China

Highly efficient organic solar cells(OSCs)are normally produced using the halogenated solvents chloroform or chlorobenzene,which present challenges for scalable manufacturing due to their toxicity,narrow processing window and low boiling ***,we develop a novel high-speed doctor-blading technique that significantly reduces the required concentration,facilitating the use of eco-friendly,non-halogenated solvents as alternatives to chloroform or *** utilizing two widely used high-boiling,non-halogenated green solvents-o-xylene(o-XY)and toluene(Tol)-in the fabrication of PM 6:L 8-BO,we achieve power conversion efficiencies(PCEs)of 18.20%and 17.36%,***,a module fabricated with o-XY demonstrates a notable PCE of 16.07%.In-situ testing and morphological analysis reveal that the o-XY coating process extends the liquid-to-solid transition stage to 6 s,significantly longer than the 1.7 s observed with Tol *** prolonged transition phase is crucial for improving the crystallinity of the thin film,reducing defect-mediated recombination,and enhancing carrier mobility,which collectively contribute to superior PCEs.

关键词： organic solar module high-speed doctor-blading non-halogenated solvent green solvent

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Evidence for moiréintralayer excitons in twisted WSe_(2)/WSe_(2) homobi layer superlattices

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Light(Science & Applications) 2022年第7期11卷 1493-1500页

作者： Biao Wu Haihong Zheng Shaofei Li Junnan Ding Jun He Yujia Zeng Keqiu Chen Zongwen Liu Shula Chen Anlian Pan Yanping Liu School of Physics and Electronics Hunan Key Laboratory for Super-microstructure and Ultrafast ProcessCentral South University932 South Lushan RoadChangshaHunan 410083China State Key Laboratory of High-Performance Complex Manufacturing Central South University932 South Lushan RoadChangshaHunan 410083China Department of Applied Physics School of Physics and ElectronicsHunan UniversityChangsha 410082China School of Chemical and Biomolecular Engineering The University of SydneySydneyNSW 2006Australia The University of Sydney Nano Institute The University of SydneySydneyNSW 2006Australia Hunan Institute of Optoelectronic Integration College of Materials Science and EngineeringHunan UniversityChangshaHunan 410082China Shenzhen Research Institute of Central South University A510aVirtual University BuildingSouthern DistrictHigh-tech Industrial ParkYuehai StreetNanshan DistrictShenzhenChina

Recent advances in twisted van der Waals heterostructure superlattices have emerged as a powerful and attractive platform for exploring novel condensed matter physics due to the interplay between the moirépotential and Coulomb *** moirésuperlattices act as a periodic confinement potential in space to capture interlayer excitons(IXs),resulting in moiréexciton arrays,which provide opportunities for quantum emitters and many-body *** observation of moiréIXs in twisted transition-metal dichalcogenide(TMD)heterostructures has recently been widely ***,the capture and study of the moiréintralayer excitons based on TMD twisted homobilayer(T-HB)remain ***,we report the observation of moiréintralayer excitons in a WSe_(2)/WSe_(2) T-HB with a small twist angle by measuring PL *** multiple split peaks with an energy range of 1.55-1.73 eV are different from that of the monolayer WSe_(2) exciton *** split peaks were caused by the trapping of intralayer excitons via the moiré*** confinement effect of the moirépotential on the moiréintralayer excitons was further demonstrated by the changing of temperature,laser power,and valley *** findings provide a new avenue for exploring new correlated quantum phenomena and their applications.

关键词： twisted layer quantum

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Ultraviolet-Selective Organic Phototransistors for Low-Power Skin-Inspired Nociceptor

SSRN

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SSRN 2023年

作者： Shi, Xiaofang Liu, Wanrong Xu, Yunchao Jin, Chenxing Zhang, Gengming Shi, Yiming Huang, Han Sun, Jia Yang, Junliang Hunan Key Laboratory for Super Microstructure and Ultrafast Process School of Physics and Electronics Central South University Hunan Changsha410083 China Hunan Key Laboratory of Nanophotonics and Devices School of Physics and Electronics Central South University 932 South Lushan Road Hunan Changsha410083 China

Skin-inspired nociceptors are particularly important for future neurorobotic technology. In this work, an artificial skin nociceptor based on ultraviolet (UV)-selective C8-BTBT phototransistors was reported. By using polymethyl methacrylate as an interfacial modification layer, a large number of standing crystals appeared in the C8-BTBT film, and the photo-dark current ratio of the devices exceeded the value of 1010. The main biological synaptic behaviors of the devices under UV light stimuli were also thoroughly investigated. Interestingly, the minimum power consumption per synaptic event (2.45 fJ) is comparable to the energy required by the biological synapses. The biological behavior of the skin-inspired nociceptor was further simulated, such as allodynia, hyperalgesia, and the self-protection behavior under UV light stimulation. Finally, as a proof of concept, the skin-inspired nociceptor was proposed to be integrated with the UV-transmittance modulator to protect against excess UV stimulation, which fully demonstrated its potential applications in bionic electronics technology. © 2023, The Authors. All rights reserved.

关键词： Phototransistors

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Stress compensation based on interfacial nanostructures for stable perovskite solar cells

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Interdisciplinary Materials 2023年第2期2卷 348-359页

作者： Cheng Zhu Xi Wang Hangxuan Li Chenyue Wang Ziyan Gao Pengxiang Zhang Xiuxiu Niu Nengxu Li Zipeng Xu Zhenhuang Su Yihua Chen Huachao Zai Haipeng Xie Yizhou Zhao Ning Yang Guilin Liu Xueyun Wang Huanping Zhou Jiawang Hong Xingyu Gao Yang Bai Qi Chen Beijing Key Laboratory of Construction Tailorable Advanced Functional Materials and Green Applications MIIT Key Laboratory for Lowdimensional Quantum Structure and DevicesExperimental Center of Advanced MaterialsSchool of Materials Science and EngineeringBeijing Institute of TechnologyBeijingChina School of Aerospace Engineering Beijing Institute of TechnologyBeijingChina Department of Materials Science and Engineering College of EngineeringPeking UniversityBeijingChina Shanghai Synchrotron Radiation Facility Shanghai Institute of Applied Physics Chinese Academy of SciencesShanghaiChina Hunan Key Laboratory for Super-microstructure and Ultrafast Process School of Physics and ElectronicsCentral South UniversityChangshaChina School of Science Jiangnan University WuxiWuxiJiangsuChina

The long-term stability issue of halide perovskite solar cells hinders their *** residual stress-strain affects device stability,which is derived from the mismatched thermophysical and mechanical properties between adjacent *** this work,we introduced the Rb_(2)CO_(3)layer at the interface of SnO_(2)/perovskite with the hierarchy morphology of snowflake-like microislands and dendritic *** a suitable thermal expansion coefficient,the Rb_(2)CO_(3)layer benefits the interfacial stress relaxation and results in a compressive stress-strain in the perovskite ***,reduced nonradiative recombination losses and optimized band alignment were *** enhancement of open-circuit voltage from 1.087 to 1.153 V in the resultant device was witnessed,which led to power conversion efficiency(PCE)of 22.7%(active area of 0.08313 cm^(2))and 20.6%(1 cm2).Moreover,these devices retained 95%of its initial PCE under the maximum power point tracking(MPPT)after 2700 *** suggests inorganic materials with high thermal expansion coefficients and specific nanostructures are promising candidates to optimize interfacial mechanics,which improves the operational stability of perovskite cells.

关键词： interfacial nanostructures long-term stability perovskite solar cells strain engineering thermal expansion coefficient

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Improving Contact and Passivation of Buried Interface by Anionic Surfactant For Planar Perovskite Solar Cells

SSRN

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SSRN 2024年

作者： Deng, Ke Li, Hongxing Chen, Hanyue Li, Miao Ke, Lili Du, Wenjuan Xiong, Jian Zhou, Conghua Liu, Gang Hunan Key Laboratory for Micro-Nano Energy Materials and Devices School of Physics and Optoelectronics Xiangtan University Hunan411105 China Guangxi Key Laboratory of Information Materials School of Materials Science and engineering Guilin University of Electronic Technology Guilin541004 China Hunan Key Laboratory of Super-microstructure and Ultrafast Process School of Physics and Electronics Central South University Hunan Province Changsha410083 China

Organic-inorganic perovskite solar cells (PSCs) are attracting a lot of attention because of their simple structure and ease of manufacture. In planar PSCs, the presence of defect states and imperfect contact of the buried interface are major obstacles to further efficiency improvement. In this work, the contact and passivation of the SnO2/perovskite interface are improved by incorporating sodium dodecyl sulfate (SDS) molecules into the SnO2 film. Through dynamic light scattering (DLS) analysis, we find that the SDS molecules can inhibit the agglomeration of SnO2 nanoparticles in solution, forming a uniform and compact film. Meanwhile, the SDS modification can significantly improve the electrical property of SnO2 ETL and passivate the interfacial defects, thus promoting effective charge transfer and reducing carrier recombination. As a consequence, the SDS-modified device has a much higher PCE (22.10%) with significantly reduced hysteresis than the control device (19.76%). © 2024, The Authors. All rights reserved.

关键词： Perovskite solar cells

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Observation of double indirect interlayer exciton in MoSe_(2)/WSe_(2) heterostructure

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Nano Research 2022年第3期15卷 2661-2666页

作者： Biao Wu Yunpeng Wang Jiahong Zhong Cheng Zeng Yassine Madoune Wanting Zhu Zongwen Liu Yanping Liu School of Physics and ElectronicsHunan Key Laboratory for Super-microstructure and Ultrafast Process Central South University932 South Lushan RoadChangshaHunan 410083China State Key Laboratory of High-Performance Complex Manufacturing Central South University932 South Lushan RoadChangshaHunan 410083China School of Chemical and Biomolecular Engineering The University of SydneyNSW 2006Australia The University of Sydney Nano Institute The University of SydneyNSW 2006Australia Shenzhen Research Institute of Central South University A510aVirtual University BuildingSouthern DistrictHigh-tech Industrial ParkYuehai StreetNanshan DistrictShenzhen 518057China

Interlayer excitons(IXS)are electron–hole pairs bound in the spatial separation layer by the Coulomb effect,and their lifetime is several orders of magnitude longer than that of direct excitons,providing an essential platform for long-lived exciton *** recent emergence of the van der Waals heterostructure(HS),which combines two layers of different transitional metal dichalcogenides(TMDs),has created new opportunities for IX ***,we demonstrate the observation of double indirect interlayer excitons in the MoSe_(2)/WSe_(2)HS using photoluminescence(PL)*** intensities of the two peaks are essentially the same,and the energy difference is 22 meV,which is perfectly in line with the calculation result of density functional ***,the experience of variable excitation power also proves that the splitting of the IXs originates from the conduction band spin-splitting of MoSe_(2).The observation results provide a promising platform for further exploring the new physical properties and optoelectronic phenomena of TMD HS.

关键词： transitional metal dichalcogenides heterostructure interlayer exciton photoluminescence density functional theory

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Saturable absorption and reverse saturable absorption of CdGa2Se4 nanoparticles determined by bond strength

SSRN

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SSRN 2022年

作者： Xiao, Xingcheng Zhu, Haixia Wang, Chang Wang, Yingwei Fan, Wenxuan He, Jun Zhong, Mianzeng Xiao, Si Chen, Zhihui Hunan Key Laboratory for Super-microstructure and Ultrafast Process School of Physics and Electronics Central South University 932 South Lushan Road Hunan Changsha410083 China

The nonlinear optical (NLO) properties of selenide gallium-cadmium (CdGa2Se4) nanoparticles (NPs) are investigated by femtosecond open-aperture Z-scan technique. The results show that they exhibit saturable absorption at 400 nm while reverse saturable absorption at 800 nm, which is ascribed to single-photon absorption and two-photon absorption, respectively. The NLO response conversion can be attributed to its band gap determined by the moderate bond strength of gallium and selenium atoms. An empirical equation for band gap and proton number of CdGa2Se4’s belonging class of compounds is proposed. It can be used to estimate the band gap values of this class of compounds and predict their nonlinear optical responses at different waveband. © 2022, The Authors. All rights reserved.

关键词： Energy gap

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Highly in-plane anisotropy of thermal transport in suspended ternary chalcogenide Ta_(2)NiS_(5)

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Nano Research 2022年第7期15卷 6601-6606页

作者： Yue Su Chuyun Deng Jinxin Liu Xiaoming Zheng Yuehua Wei Yangbo Chen Wei Yu Xiao Guo Weiwei Cai Gang Peng Han Huang Xueao Zhang College of Physical Science and Technology Xiamen UniversityXiamen 361005China College of Arts and Sciences National University of Defense TechnologyChangsha 410073China College of Advanced Interdisciplinary Studies National University of Defense TechnologyChangsha 410073China Jiujiang Research Institute of Xiamen University Jiujiang 332105China Hunan Key Laboratory of Super-microstructure and Ultrafast Process School of Physics and ElectronicsCentral South UniversityChangsha 410083China Beijing National Laboratory for Condensed Matter Physics and Institute of Physics Chinese Academy of SciencesBeijing 100190China

Energy dissipation has always been an attention-getting issue in modern electronics and the emerging low-symmetry two-dimensional(2D)materials are considered to have broad prospects in solving the energy dissipation *** the thermal transport of a typical 2D ternary chalcogenide Ta_(2)NiS_(5) is *** the first time we have observed strongly anisotropic in-plane thermal conductivity towards armchair and zigzag axes of suspended few-layer Ta_(2)NiS_(5) flakes through Raman *** 7-nm-thick Ta_(2)NiS_(5) flakes,theκz i g z a g is 4.76 W·m^(−1)·K^(−1) andκa r m c h a i r is 7.79 W·m^(−1)·K^(−1),with a large anisotropic ratio(κa r m c h a i r/κz i g z a g)of 1.64 mainly ascribed to different phonon mean-free-paths along armchair and zigzag ***,the thickness dependence of thermal anisotropy is also *** the flake thickness increases,theκa r m c h a i r/κz i g z a g reduces sharply from 1.64 to *** could be attributed to the diversity in phonon boundary scattering,which decreases faster in zigzag direction than in armchair *** anisotropic property enables heat flow manipulation in Ta_(2)NiS_(5) based devices to improve thermal management and device *** work helps reveal the anisotropy physics of ternary transition metal chalcogenides,along with significant guidance to develop energy-efficient next generation nanodevices.

关键词： anisotropic thermal conductivity ternary transition metal chalcogenide Ta_(2)NiS_(5) energy dissipation phonon mode

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Hidden self-duality in quasiperiodic network models

arXiv

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arXiv 2024年

作者： Hu, Hai-Tao Lin, Xiaoshui Guo, Ai-Min Lin, Zijing Gong, Ming Department of Physics University of Science and Technology of China Anhui Hefei230026 China Hefei National Laboratory University of Science and Technology of China Hefei230088 China Hunan Key Laboratory for Super-microstructure and Ultrafast Process School of Physics Central South University Changsha410083 China

Mobility edges (MEs), which separate the extended phases from the localized phases, are one of the most crucial concepts in Anderson localization. In one-dimensional quasiperiodic systems, only a few models with exact MEs can be constructed using the generalized self-dual theory, the Avila’s global theory, or the renormalization groups method. Then, an intriguing question is that can we realize much more physical models with exact solvable MEs? Here we uncover the hidden self-duality in a class of quasiperiodic network models constituted by periodic sites and quasiperiodic sites. While the original models do not have self-duality, after integrating out the periodic sites, the effective Hamiltonian with energy dependent potentials will have this duality, yielding MEs. The mosaic models studied in the literature are the simplest quasiperiodic netowork models. For a long time the MEs in these models are believed to come from the absent of self-duality, and we show that they actually come from the hidden self-duality. Finally, we extend this idea to more network models and explicitly determine their exact MEs with the hidden duality. The predictions in these models can be realized using optical and acoustic waveguide arrays and electric circuits in experiments. The new models presented in this work can greatly advance our understanding of MEs in Anderson transition. Copyright © 2024, The Authors. All rights reserved.

关键词： Hamiltonians

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Resonant tunneling in disordered borophene nanoribbons with line defects

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npj Computational Materials 2022年第1期8卷 1230-1237页

作者： Pei-Jia Hu Si-Xian Wang Xiao-Feng Chen Zeng-Ren Liang Tie-Feng Fang Ai-Min Guo Hui Xu Qing-Feng Sun Hunan Key Laboratory for Super-microstructure and Ultrafast Process School of Physics and ElectronicsCentral South UniversityChangsha410083China School of Physical Science and Technology Lanzhou UniversityLanzhou730000China School of Sciences Nantong UniversityNantong226019China International Center for Quantum Materials School of PhysicsPeking UniversityBeijing100871China Collaborative Innovation Center of Quantum Matter Beijing100871China CAS Center for Excellence in Topological Quantum Computation University of Chinese Academy of SciencesBeijing100190China

Recently,borophene has attracted extensive interest as the wonder material,showing that line defects(LDs)occur widely at the interface between V_(1/5)and V_(1/6)boron ***,we study theoretically the electron transport through two-terminal disordered borophene nanoribbons(BNRs)with random distribution of *** results indicate that LDs strongly affect the electron transport properties of *** V_(1/5)and V_(1/6)BNRs exhibit metallic behavior without any LD,in agreement with *** in the presence of LDs,the overall electron transport ability is dramatically decreased,but some resonant peaks of conductance quantum are found in the transmission spectrum of any disordered BNR with arbitrary arrangement of *** disordered BNRs exhibit metal-insulator transition with tunable transmission gap in the insulating ***,two evolution phenomena of resonant peaks are revealed for disordered BNRs with different *** results may help for understanding structure-property relationships and designing LD-based nanodevices.

关键词： tunneling boron resonant

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