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Transmission Characteristics of a Generalized Parallel Plate Dielectric Waveguide at THz Frequencies

Chinese Physics Letters 2011年第12期28卷 128-131页

作者： YE Long-Fang XU Rui-Min ZHANG Yong LIN Wei-Gan Extra High Frequency Key Laboratory of Fundamental Science School of Electronic EngineeringUniversity of Electronic Science and Technology of ChinaChengdu 611731 National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing 210016

A generalized parallel-plate dielectric waveguide(G-PPDW)is proposed as a new guiding medium for terahertz wave.A theoretical analysis of the transmission characteristics for the TE modes of this generalized structure is *** are presented for the field components,dispersion,power ratio,transmission loss and characteristic impedance as functions of the operating frequencies,dimensions and material *** the case of the lowest-order mode TE10,design curves covering frequencies and dimensions for the given material constants in the THz region are *** theoretical results of transmission characteristics obtained from these equations are verified by the finite-element method with a good *** investigation results show that by selecting proper dimensions and dielectric materials,G-PPDW can be used to guide THz waves efficiently with high power confinement and low *** outstanding properties may open up a way to many important applications for THz integrated circuits and systems.

关键词： waveguide Waveguide dimensions

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Corrigendum to “Accurate calculation of terahertz attenuation of a dielectric-coated metal wire with an intervening air gap using the engineering approach” [Optics Communications 284/16–17 (2011) 3990–3995]

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Optics Communications 2012年第5期285卷 857-857页

作者： Zhihui Wang Yong Zhang Ruimin Xu Weigan Lin School of Electronic Engineering University of Electronic Science and Technology of China Chengdu 611731 China National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing 210016 China

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A monolithic AlGaN/GaN HEMT VCO using BST film varactor

A monolithic AlGaN/GaN HEMT VCO using BST film varactor

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4th IEEE International Symposium on Radio-Frequency Integration technology, RFIT2011

作者： Kong, Cen Li, Hui Jiang, Shuwen Zhou, Jianjun Chen, Xiaojian Chen, Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Device Institute Nanjing 210016 China State Key Laboratory of Electronic Thin-Film and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 China

ISBN: (纸本)9781457705182

A monolithic AlGaN/GaN HEMT voltage controlled oscillator (VCO) using barium strontium titanate (BST) MIM varactor is reported first time. The BST thin film was fabricated by RF magnetron sputtering. The fabrication process is fully compatible with the standard GaN MMIC integrated process. An output power of 17dBm and the phase noise of -75dBc/Hz (at 100kHz) and -110dBc/Hz (at 1MHz) are obtained while the bias of the drain is 8V and BST varactor voltage is 0V. The VCO exhibits 500MHz tunable frequency bandwidth at the central frequency of 6.42GHz while BST varactor voltage changed from 0V to 20V. © 2011 IEEE.

关键词： Barium strontium titanate

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低真空条件下石墨烯薄膜的制备工艺研究

低真空条件下石墨烯薄膜的制备工艺研究

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第十七届全国化合物半导体材料微波器件和光电器件学术会议

作者： Yun Li 李赟 Zhijun Yin 尹志军 Zhiming Zhu 朱志明 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanfing Electronic 微波毫米波单片集成和模块电路重点实验室南京电子器件研究所南京 210016

本文利用水平热壁式CVD外延炉开展了SiC热分解法制备石墨烯薄膜的实验,主要研究了不同的真空热处理时间对石墨烯薄膜生长的影响。SiC衬底的氢气在线刻蚀处理和热分解在同一炉次进行,高温时反应室释放出之前吸附的氢气不能有效地被分子... 详细信息

本文利用水平热壁式CVD外延炉开展了SiC热分解法制备石墨烯薄膜的实验,主要研究了不同的真空热处理时间对石墨烯薄膜生长的影响。SiC衬底的氢气在线刻蚀处理和热分解在同一炉次进行,高温时反应室释放出之前吸附的氢气不能有效地被分子泵抽除,SiC衬底的有效碳化时间有限,实验发现热处理时间超过30分钟之后,石墨烯层数并无明显变化。进一步加长热处理时间,石墨烯样品中出现局部氢插入层。

关键词：石墨烯薄膜碳化硅衬底制备工艺性能评价低真空条件

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高质量GaN薄膜的MOCVD同质外延生长

高质量GaN薄膜的MOCVD同质外延生长

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第十七届全国化合物半导体材料微波器件和光电器件学术会议

作者： Liang Li 李亮 Zhonghui Li 李忠辉 Weike Luo 罗伟科 Xu Dong 董逊 Daqing Peng 彭大青 Dongguo Zhang 张东国微波毫米波单片集成和模块电路重点实验室南京电子器件研究所南京210016 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronics Device InstituteNaning210016 China

采用金属有机化学气相沉积(MOCVD)方法,在GaN自支撑衬底上同质外延生长了GaN薄膜,得到高质量的GaN外延薄膜。X射线衍射(XRD)结果显示其(002)面摇摆曲线半高宽小于100弧秒,原子力显微镜(AFM)照片上能看到连续的二维台阶流形貌,其表面租... 详细信息

采用金属有机化学气相沉积(MOCVD)方法,在GaN自支撑衬底上同质外延生长了GaN薄膜,得到高质量的GaN外延薄膜。X射线衍射(XRD)结果显示其(002)面摇摆曲线半高宽小于100弧秒,原子力显微镜(AFM)照片上能看到连续的二维台阶流形貌,其表面租糙度小于0.5nm,其位错密度低于l06cm-3。

关键词：半导体薄膜氮化镓同质外延金属有机化学气相沉积

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低温GaN插入层对AlGaN/GaN二维电子气特性的改善

低温GaN插入层对AlGaN/GaN二维电子气特性的改善

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第十七届全国化合物半导体材料微波器件和光电器件学术会议

作者： Dongguo Zhaang 张东国 Zhonghui Li 李忠辉 Daqing Peng 彭大青 Xun Dong 董逊 Liang Li 李亮 Jinyu Ni 倪金玉 Science and Technology of Monolithic Integrated and Modules Circuits Key Laboratory Nanjing Electronic Devices Institute Nanfing 210016 China 微波毫米波单片集成和模块电路重点实验室南京电子器件研究所南京 210016

利用低压MOCVD技术在蓝宝石衬底上生长了AlGaN/GaN二维电子气(2DEG)材料,在GaN生长中插入一层低温GaN,并研究了低温GaN插入层对二维电子气输运特性的影响。使用原子力显微镜(AFM)和非接触霍尔测试仪测量了材料的表面形貌和电学特性,发... 详细信息

利用低压MOCVD技术在蓝宝石衬底上生长了AlGaN/GaN二维电子气(2DEG)材料,在GaN生长中插入一层低温GaN,并研究了低温GaN插入层对二维电子气输运特性的影响。使用原子力显微镜(AFM)和非接触霍尔测试仪测量了材料的表面形貌和电学特性,发现低温GaN插入层可以改善材料表面平整度并使AlGaN/GaN2DEG的电子迁移率有明显提高,GaN插入层温度为860℃的样品2DEG的电子迁移率达到2110 cm2/V.s。

关键词：异质结半导体低温氮化镓插入层二维电子气性能改善电子迁移率

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A monolithic AlGaN/GaN HEMT VCO using BST film varactor

A monolithic AlGaN/GaN HEMT VCO using BST film varactor

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IEEE International Workshop on Radio-Frequency Integration technology (RFIT)

作者： Cen Kong Hui Li Shuwen Jiang Jianjun Zhou Xiaojian Chen Chen Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Device Institute Nanjing China State Key Laboratory of Electronic Thin-Film and Integrated Devices University of Electronic Science and Technology Chengdu China

关键词： Varactors Gallium nitride HEMTs Voltage-controlled oscillators Microwave oscillators MMICs Phase noise

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Effects of AlN and AlGaN Interlayer on Properties of InAlN/GaN Heterostructures

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Chinese Physics Letters 2010年第3期27卷 251-253页

作者：董逊李忠辉李哲洋周建军李亮李赟张岚许晓军徐轩韩春林 National Key Laboratory of Science and Technology on Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute Nanjing 210016

InAlN/GaN heterojunction structures are grown on two-inch c-face（0001） sapphire substrates by metalorganic chemical vapour deposition. AlN and AlGaN interlayers are intentionally inserted into the structure to improve the electrical properties. The lowest sheet resistance of 359 Ω/sq and the highest room-temperature two-dimensional electron gas （2DEG） mobility of 1051 cm2 V-1s-1 is obtained in the structure with AlN thickness of 1.3 nm. The structure with AlN thickness of 2 nm exhibits the highest 2DEG concentration of 1.84×1013 cm-2. The sample with an AlGaN interlayer gives a smoother surface morphology compared to the one using an AlN interlayer, indicating potential applications of this technique in device fabrication.

关键词： Condensed matter: electrical magnetic and optical Semiconductors Surfaces interfaces and thin films

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The performance of thin barrier InAlN/AlN/GaN MIS HEMT with high dielectric insulators

The performance of thin barrier InAlN/AlN/GaN MIS HEMT with ...

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2010 International Conference on Microwave and Millimeter Wave technology, ICMMT 2010

作者： Zhou, J.J. Dong, X. Liu, H.Q. Chen, T.S. Chen, C. National Key Laboratory of Science technology on Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute Nanjing 210016 China

ISBN: (纸本)9781424457052

High quality thin barrier InAlN/AlN/GaN heterostructure was grown by metal-organic chemical vapor deposition (MOCVD). The metal-insulator- semiconductor (MIS) structure devices were fabricated with high dielectric constant material barium strontium titanate (BST). The gate leakage current is reduced more than one order of magnitude under 40 V reverse bias, by using the high dielectric constant material. High transconductance 200 mS/mm was obtained with 1um gate length. The influence of the high dielectric BST material on the performance of the MIS structure is also investigated. © 2010 IEEE.

关键词： Strontium titanates

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Simulation of polarization pinning effect in PZT/AlGaN/GaN metal-ferroelectric-semiconductor heterostructure

Simulation of polarization pinning effect in PZT/AlGaN/GaN m...

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2010 International Conference on Microwave and Millimeter Wave technology, ICMMT 2010

作者： Kong, Yuechan Zhou, Jianjun Xue, Fangshi Li, Liang Chen, Chen Luo, Wenbo Zeng, Huizhong Zhu, Jun National Key Laboratory of Science and Technology on Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute Nanjing 210016 China State Key Lab. of Electronic Thin Films and Integrated Devices University of Electronics Science and Technology of China Chengdu 610054 China

ISBN: (纸本)9781424457052

The influence of ferroelectric polarization on the electrical properties of PZT/AlGaN/GaN metal-ferroelectric-semiconductor (MFS) structure is investigated by capacitance-voltage (C-V) measurements. A distinct unsymmetrical shift of the C-V profile is observed that when swept positively, the C-V curve shifts to the right with increasing the negative starting voltage, while hardly move with different starting positive voltage when swept in the opposite direction. To understand this, a pinning effect model is developed and incorporated into self-consistent calculation, with taking history-dependent electric field effect into account. Owing to the strong polarization of underlying AlGaN layer, the switchable polarization of ferroelectric is initially pinned at -1.55 μC/cm2 and does not change after positive bias operation. When increasing the negative sweeping voltage, the partially switched ferroelectric dipoles are increased, which results in the right-shift of the C-V curves, in agreement with the experiment. © 2010 IEEE.

关键词： Aluminum gallium nitride

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