This paper mainly introduces a method to build a nonlinear model of MHEMT, mainly to solve the problem of short channel effect of MHEMT. In order to accurately characterize the active devices below 110GHz, a LRRM cali...
详细信息
Wherever possible, we have adopted the newest modern technology. The Au-Si binary alloy sintered chips are silicon or silicon carbide power devices. The sintered temperature is 380 to 390176;C. Using micro-infrared ...
详细信息
Recently, wide bandgap semiconductors are extremely attractive for the gamut of power electronics applications from power conditioning to RF/microwave transmitters for communications and radar systems. Of the various ...
详细信息
A metal contact RF MEMS switch based on single crystal silicon is presented in this article. Performance of the switch is demonstrated numerically in simulations. The mN-level contact and release forces are achieved. ...
详细信息
An accurate method for extracting the elements of InP HBT small-signal model parameters is proposed in this paper. The method can accurately resolve the most important internal parameters from the measured S-parameter...
详细信息
A compact transition structure integrated with DC feed low pass filter for submillimeter wave application is designed and simulated. In this structure, the probe transition for suspended microstrip is in longitudinal ...
详细信息
ISBN:
(纸本)1424410444
A compact transition structure integrated with DC feed low pass filter for submillimeter wave application is designed and simulated. In this structure, the probe transition for suspended microstrip is in longitudinal orientation relative to the waveguide, and a sector suspended microstrip low pass filter is integrated for DC feed circuits, Broad bandwidth with low insert loss (
Electroluminescence (EL) characteristics from reverse-biased Schottky barrier diode are investigated on AlGaN/GaN high electron mobility transistors (HEMT) with different structures. Light emission from devices under ...
详细信息
A precise integration of the optoelectronic device onto a functional platform, such as silicon photonics, LiNbO3 photonics or Si CMOS, is the key approach that makes the union of the different parts. Here, we propose ...
详细信息
We fabricated the depletion-mode high-electron mobility transistors (HEMTs) based on a quaternary barrier InAlGaN/AlN/GaN heterostructure on SiC substrate. A 60-nm rectangular-shape gate was defined through e-beam lit...
详细信息
GaAs terahertz schottky barrier diode SBD has been a major technology in terahertz wave multiplexing, mixing and direct detection for decades, due to its high mobility and low capacity. In this paper, T-Anode GaAs ter...
详细信息
暂无评论