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检索条件"机构=1Science and Technology on Monolithic Integrated Circuits and Modules Laboratory"
188 条 记 录,以下是71-80 订阅
排序:
Integrating high-quality dielectrics with one-nanometer equivalent oxide thickness on two-dimensional electronic devices
arXiv
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arXiv 2019年
作者: Li, Weisheng Zhou, Jian Cai, Songhua Yu, Zhihao Zhang, Jialin Fang, Nan Li, Taotao Wu, Yun Chen, Tangsheng Xie, Xiaoyu Ma, Haibo Yan, Ke Dai, Ningxuan Wu, Xiangjin Zhao, Huijuan Wang, Zixuan He, Daowei Pan, Lijia Shi, Yi Wang, Peng Chen, Wei Nagashio, Kosuke Duan, Xiangfeng Wang, Xinran National Laboratory of Solid State Microstructures School of Electronic Science and Engineering Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing210093 China National Laboratory of Solid State Microstructures Jiangsu Key Laboratory of Artificial Functional Materials College of Engineering and Applied Sciences Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing210093 China Department of Chemistry National University of Singapore 3 Science Drive 3 117543 Singapore Department of Materials Engineering University of Tokyo Tokyo113-8656 Japan Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Device Institute Nanjing210016 China School of Chemistry and Chemical Engineering Nanjing University Nanjing210023 China Department of Chemistry and Biochemistry University of California Los AngelesCA United States
Two-dimensional (2D) semiconductors are widely recognized as attractive channel materials for low-power electronics. However, an unresolved challenge is the integration of high-quality, ultrathin high-κ dielectrics t... 详细信息
来源: 评论
Capacitance-voltage characteristic of Ga- and N-polar AlGaN/GaN HEMTs
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Physica Status Solidi (C) Current Topics in Solid State Physics 2016年 第5-6期13卷 317-320页
作者: Peng, Daqing Li, Zhonghui Li, Chuanhao Zhang, Dongguo Li, Liang Dong, Xun Pan, Lei Luo, Weike Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China
Ga- and N-polar AlGaN/GaN HEMTs were designed and epitaxially grown on Si- and C-face SiC substrates by MOCVD. The Capacitance-voltage characteristics of the two structures were investigated by C-V profile and drift-d... 详细信息
来源: 评论
Design, fabrication and characterising of 100 W GaN HEMT for Ku-band application
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Journal of Semiconductors 2016年 第8期37卷 49-54页
作者: 任春江 钟世昌 李宇超 李忠辉 孔月婵 陈堂胜 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electron Devices InstituteNanjing 210016 China
Ku-band GaN power transistor with output power over 100 W under the pulsed operation mode is pre- sented. A high temperature A1N nucleation together with an Fe doped GaN buffer was introduced for the developed GaN HEM... 详细信息
来源: 评论
Research of temporary bonding for 3D integrational Microsystem
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Journal of Physics: Conference Series 2018年 第1期986卷
作者: G X Shi J Wu K Q Qian J Zhu Nanjing Electronic Devices Institute Nanjing 210016 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing 210016 China
Due to the thickness of current interposer must be very small, the thickness of active and passive wafers are no more than 200um, even less than 100um, sometime even less than 50um, So handing the thin wafer is the ke...
来源: 评论
Cu Pillar Low Temperature Bonding and Interconnection technology of for 3D RF Microsystem
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Journal of Physics: Conference Series 2018年 第1期986卷
作者: G X Shi K Q Qian M Huang Y W Yu J Zhu Nanjing Electronic Devices Institute Nanjing 210016 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing 210016 China
In this paper 3D interconnects technologies used Cu pillars are discussed with respect to RF microsystem. While 2.5D Si interposer and 3D packaging seem to rely to cu pillars for the coming years, RF microsystem used ...
来源: 评论
Effect of NH3 flow on incorporation efficiency of Al composition and reduction of surface donor states in AlGaN grown by MOVPE
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Physica Status Solidi (C) Current Topics in Solid State Physics 2016年 第5-6期13卷 214-216页
作者: Gao, Tao Xu, Ruimin Zhang, Dongguo Li, Zhonghui Peng, Daqing Don, Xun Chen, Tangsheng Chengdu611731 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China
We have studied the effect of various ammonia (NH3) flow rates on AlGaN film grown on GaN using c-plane sapphire as substrate by metal organic chemical vapour deposition. The influences of NH3 flow on the species diff... 详细信息
来源: 评论
High-performance enhancement-mode AlGaN/GaN MOS-HEMTs with fluorinated stack gate dielectrics and thin barrier layer
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Journal of Semiconductors 2016年 第6期37卷 112-115页
作者: 高涛 徐锐敏 张凯 孔月婵 周建军 孔岑 郁鑫鑫 董迅 陈堂胜 Fundamental Science on EHF Laboratory University of Electronic Science and Technology of China (UESTC) Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute
We present high-performance enhancement-mode AlGaN/GaN metal-oxide-semiconductor highelectron mobility transistors(MOS-HEMTs) by a fluorinated gate dielectric technique.A nanolaminate of an Al_2O_3/La_xAl_(1-x)O_3... 详细信息
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An artificial neural network based nonlinear behavioral model for RF power transistors
An artificial neural network based nonlinear behavioral mode...
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Asia-Pacific Conference on Microwave
作者: Jialin Cai Jie Wang Chao Yu Haiyan Lu Jun Liu Lingling Sun Ministry of Education Hangzhou Dianzi University Hangzhou China State Key Laboratory of Millimeter Waves Southeast University Nanjing China The Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China
In this paper, a frequency domain, nonlinear, behavioral model for RF power transistors, based on an artificial neural network (ANN), is proposed and validated. The model is identified using the back-propagation algor... 详细信息
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High performance ultra-thin quaternary InAlGaN barrier HEMTs with fT > 260 GHz
High performance ultra-thin quaternary InAlGaN barrier HEMTs...
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2016 International Forum on Wide Bandgap Semiconductors China, IFWS 2016
作者: Zhu, Guangrun Zhang, Kai Yu, Xinxin Kong, Yuechan Chen, Tangsheng Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute No.524 Zhongshan East Road Nanjing China
We fabricated the depletion-mode high-electron mobility transistors (HEMTs) based on a quaternary barrier InAlGaN/AlN/GaN heterostructure on SiC substrate. A 60-nm rectangular-shape gate was defined through e-beam lit... 详细信息
来源: 评论
Structure and Strain Properties of GaN Films Grown on Si(111) Substrates with AlxGa1-xN/AlyGa1-yN Superlattices
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Chinese Physics Letters 2015年 第5期32卷 153-156页
作者: 潘磊 倪金玉 郁鑫鑫 董逊 彭大青 李传皓 李忠辉 陈堂胜 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute
CaN films with an AlxGa1-xN/AlyGa1-xN superlattice (SL) buffer layer are grown on Si(111) substrates by metal-organic chemical vapor deposition (MOCVD). The structure and strain properties of the samples are stu... 详细信息
来源: 评论