ITO/AZO double films were deposited by RF sputtering on p-Si(100) substrate to fabricate ITO/AZO/SiO2/p-Si SIS heterojunction. The structural, optics and electrical properties of the ITO/AZO films were characterized b...
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A novel conception of inorganic proton exchange membrane tor elevated temperature PEM fuel cell was proposed in this research. The inorganic electrolyte was approached by trapping heteropolyacid (HPA) molecules inside...
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V 2 O 5 /ordered mesoporous carbon (CMK-3) composites were prepared by an ultrasonic method. The microstructures of such composites were characterized by X-ray diffraction (XRD), nitrogen adsorption and desorption, X-...
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V 2 O 5 /ordered mesoporous carbon (CMK-3) composites were prepared by an ultrasonic method. The microstructures of such composites were characterized by X-ray diffraction (XRD), nitrogen adsorption and desorption, X-ray photoelectron spectra (XPS) and transmission electron microscopy (TEM). The results showed that the ultrasonic synthesis method was flexible and efficient to highly disperse V 2 O 5 nanoparticles in CMK-3. The electrochemical property of the V 2 O 5 /CMK-3 composites has also been investigated. The specific capacitance of the new composites was significantly improved (124 F/g) compared to that of CMK-3 (77 F/g). The high capacitance was mainly derived from the high specific surface area of CMK-3 and the pseudo-capacitance of V 2 O 5 . Therefore, the V 2 O 5 /CMK-3 composites can be a potential electrode material applied in the capacitors.
ZnO thin films doped with aluminum (AZO) were deposited on silicon dioxide covered p-Si (100) substrates by radio frequency magnetron sputtering, to fabricate AZO/SiO2/p-Si heterojunction, as an absorber for ultraviol...
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Li ion conducting polymer electrolyte films were prepared based on poly(vinyl alcohol) (PVA) with 5, 10, 15, 20, 25 and 30 wt% lithium iron phosphate (LiFePO4) salt using a solution-casting technique. X-ray diffr...
Li ion conducting polymer electrolyte films were prepared based on poly(vinyl alcohol) (PVA) with 5, 10, 15, 20, 25 and 30 wt% lithium iron phosphate (LiFePO4) salt using a solution-casting technique. X-ray diffraction (XRD) was used to determine the complexation of the polymer with LiFePO4 salt. Differential scanning (DSC) calorimetry was used to determine the melting temperatures of the pure PVA and complexed films. The maximum ionic conductivity was found to be 1.18 × 10−5 S cm−1 for (PVA:LiFePO4) (75:25) film, which increased to 3.12 × 10−5 S cm−1 upon the addition of propylene carbonate (PC) plasticizer at ambient temperature. The Li+ ion transport number was found to be 0.40 for (PVA: LiFePO4) (75:25) film using AC impedance and DC polarization methods. Dielectric studies were performed for these polymer electrolyte films in the frequency range of 10 Hz to 10 MHz at different temperatures. The activation energies of the complexed films were calculated from the dielectric loss tangent spectra and were found to be 0.35, 0.30, 0.27 and 0.28 eV. The cyclic voltammogram (CV) curves of (PVA: LiFePO4) (75:25)+PC film exhibited higher specific capacities than those for other films.
Integral membrane proteins(IMPs) represent over one quarter of the total proteins of various *** IMPs are embedded in the lipid membrane which is essential to maintain the hydrophobic structure and function of *** to ...
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Integral membrane proteins(IMPs) represent over one quarter of the total proteins of various *** IMPs are embedded in the lipid membrane which is essential to maintain the hydrophobic structure and function of *** to date,most applications of IMPs are related to their physiological ***,the hydrophobic structure of IMPs can also be utilized for
ITO/AZO double films were deposited by RF sputtering on p-Si texturized substrate to fabricate ITO/AZO/SiO2/p-Si SIS heterojunction. The structural, optics and electrical properties of the ITO/AZO films were character...
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In order to fabricate AZO/SiO2/p-Si heterojunction device and let it be an absorber of ultraviolet response cell. Zinc oxide (ZnO) thin films doped with aluminum (AZO) were deposited on p-Si(100) substrates covered wi...
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In order to fabricate AZO/SiO2/p-Si heterojunction device and let it be an absorber of ultraviolet response cell. Zinc oxide (ZnO) thin films doped with aluminum (AZO) were deposited on p-Si(100) substrates covered with silicon dioxide (SiO2) by radio frequency magnetron sputtering. The optical and electrical properties of the Al doped - ZnO films were characterized by UV-VIS spectrophotometer, current-voltage measurement, and four point probe technique, respectively. The results show that the device is a typical tunneling diode for minority carrier and a strong obstructing effect from majority carriers. The potential rectifying behavior and photovoltaic characteristic is present at dark current and weak light illumination, respectively.
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