Three novel dielectric ceramics Ba5LnZnNb9O30 (Ln= La, Nd and Sm) were synthesized and characterized in the BaO-Ln2O3-ZnO-Nb2O5 quaternary system, which formed the filled tungsten-bronze structures. The present cerami...
详细信息
Three novel dielectric ceramics Ba5LnZnNb9O30 (Ln= La, Nd and Sm) were synthesized and characterized in the BaO-Ln2O3-ZnO-Nb2O5 quaternary system, which formed the filled tungsten-bronze structures. The present ceramics exhibit high dielectric constant (εr) up to 310, low dielectric loss in the level of 10 3 at 1 MHz. Meanwhile, the temperature coefficients of the dielectric constant (τε) of Ba5LnZnNb9O3o varies from -1 390×10-6 to -1 220×10-6/℃as the radius of Ln3+ increases. The present ceramics are promising candidates for high dielectric constant and low loss dielectric ceramics.
The influences of powder extrusfen molding (PEM), die pressing and cold isostatic pressing (CIP) on the green compacts and the sintered compacts of nanocrystalline WC-6Co composite powder produced by spray pyrogenatio...
详细信息
Ni-YSZ and Ni-Co-YSZ cermets were fabricated by hot-press-sintering from nanocomposite powders. The structure, morphology, relative density, hardness, specific heat capacity and thermal conductivity were measured. Res...
详细信息
Polycrystalline bulk Ti3AlC2 material with high purity and density was fabricated by hot pressing from the powder mixture with the starting stoichiometric mole ratios of 2.0TiC/ 1.0Ti/ 1.1A1/ 0.1Si at 1 300-1 500℃. X...
详细信息
Polycrystalline bulk Ti3AlC2 material with high purity and density was fabricated by hot pressing from the powder mixture with the starting stoichiometric mole ratios of 2.0TiC/ 1.0Ti/ 1.1A1/ 0.1Si at 1 300-1 500℃. X-ray diffraction patterns and scanning electron microscopy photographs of the fully dense samples indicate that the proper addition of silicon is favorable to the formation of Ti3AlC2, consequently results in high purity of the prepared samples. The Ti3AlC2 hot pressed at 1 300℃and 1 400℃is in plane-shape with sizes of 6-8μm and 15-20μm in the elongated dimension, respectively. The purities of samples are measured by the K-value method, and the contents of TiC are given by a linear equation.
A new niobate compound was synthesized for the first time in Na2 O-BaO-Li2 O-ZnO-Nb2 O5 system by solid state reaction. The acw compound was studied by X-ray diffraction, electron probe, X-ray microanalysis, chemical ...
详细信息
A new niobate compound was synthesized for the first time in Na2 O-BaO-Li2 O-ZnO-Nb2 O5 system by solid state reaction. The acw compound was studied by X-ray diffraction, electron probe, X-ray microanalysis, chemical analysis and SEM. The result of X-ray powder diffraction shows that NaBa2 Li0.6 Nb4.8 Zn0.2 O15 belongs to orthorhombic tungsten bronze structure, with space group Pba2( 32 ) and lattice parameters a = 12.6115(2)A, b = 12.4981(2)A, C = 3.9479(3)A. The X-ray powder diffraction lines of the compoutid were well indexed.
The aim of this study is to show how fractal analysis can be effectively used to characterize the texture of porous solids. The materials under study were carbon papers, the backing material of the gas diffusion lay...
详细信息
The aim of this study is to show how fractal analysis can be effectively used to characterize the texture of porous solids. The materials under study were carbon papers, the backing material of the gas diffusion layer (GDL) in Proton Exchange Membrane Fuel Cell (PEMFC). The fractal dimensions were calculated by analyzing data from mercury porosimetry. The polytotrafluoroethylene (PTFE) treated carbon paper shows a significantly high fractal dimension value than pare sample, and the high fractal dimension signifies that the physical complexity of the pore surface is enhanced. The fractal dimension can be used as a valid parameter to monitor the textural evolution of the samples as the treatment progresses, as this behaves in a similar way to other textural parameters. The use of fractal analysis in conjunction with the results of classical characterization methods leads to a better understanding of textural modificatious in the processing of materials.
The isothermal oxidation behavior at 900–1300176;C for 20 h in air of bulk Ti3AlC2 with 2.8 wt% TiC sintered by means of hot pressing was investigated in the work. The isothermal oxidation behavior generally follow...
详细信息
The isothermal oxidation behavior at 900–1300°C for 20 h in air of bulk Ti3AlC2 with 2.8 wt% TiC sintered by means of hot pressing was investigated in the work. The isothermal oxidation behavior generally followed a parabolic rate law. The parabolic rate constants increased from 1.39×10[10] kg[2]·m[4]·s[1] at 900°C to 5.56×10[9] kg[2]·m[4]·s[1] at 1300°C. The calculated activation energy was 136.45 kJ/mol. It was demonstrated that Ti3AlC2 had excellent oxidation resistance due to the continuous, dense; adhesive protect scales consisted of a mass of α-Al2O3; a little of TiO2;/or Al2TiO5. In principle, the oxide scale was grown by the inward diffusion of O[2]; the outward diffusion of Ti[4+]; Al[3+]. The rapid outward diffusion of cations usually resulted in the formation of cracks, gaps,; holes.
作者:
闵新民Department of Applied Chemistry
Wuhan University of Technology Wuhan 430070 ChinaState Key Laboratory of Advanced Technology for Materials Synthesis and ProcessingWuhan University of Technology Wuhan 430070China
The electronic structures of Ca3Co2O6, Na and Ni doped models were studied by the quantum chemical software of Cambride Serial Total Energy Package (CASTEP) that is based on deusity function theory (DFT) and psend...
详细信息
The electronic structures of Ca3Co2O6, Na and Ni doped models were studied by the quantum chemical software of Cambride Serial Total Energy Package (CASTEP) that is based on deusity function theory (DFT) and psendo-potential. The electronic conductivity, seebeck coefficient, thermal conduetivity and figure of merit (Z) were computed. The energy band structure reveals the form of the impurity levels due to the substitutional imapurity in semiconductors. Na-doped model stunts the character of p-type semiconductor, but Xi-doped model is n-type semiconductor. The calculation results show that the electric conduetirity of the doped model is higher than that of the non-doped model, while the Seebeck coefficient and thermal conductivity of the doped model are lower than those of the non-doped one. Because of the great increase of the electric conductivity, Z of Na- doped model is enhanced and thermoelectric properties are improved. On the other hand, as the large decline of Seebeck coefficient, Z of Ni-doped model is less than that of the non-doped model.
作者:
闵新民Department of Applied Chemistry
Wuhan University of TechnologyWuhan 430070ChinaState Key laboratory of Advanced Technology for Materials Synthesis and ProcessingWuhan University of TechnologyWuhan 430070China
The relation among electronic structure, chemical bond and property of Ti3SiC2 and Al-doped was studied by density function and discrete variation ( DFT- DVM) method. When Al element is added into Ti3 SiC2 , there i...
详细信息
The relation among electronic structure, chemical bond and property of Ti3SiC2 and Al-doped was studied by density function and discrete variation ( DFT- DVM) method. When Al element is added into Ti3 SiC2 , there is a less difference of ionic bond, which does not play a leading role to influent the properties. After adding Al, the covalent bond of Al and the near Ti becomes somewhat weaker, but the covalent bond of Al and the Si in the same layer is obviously stronger than that of Si and Si before adding. Therefore, in preparation of Ti3 SiC2 , adding a proper quantity of Al can promote the formation of Ti3 SiC2 . The density of stnte shows that there is a mixed conductor character in both of Ti3 SiC2 and adding Al element. Ti3 SiC2 is with more tendencies to form a semiconductor. The total density of state near Fermi lever after adding Al is larger than that before adding, so the electric conductivity may increase after adding Al.
Not only the isothermal oxidation behaviors at 900-1 300℃for 20 h in air of bulk Ti3AlC2 with 2.8% TiC which was sintered by hot pressing with the additive of silicon, but also the cyclic oxidation behavior at 1100-...
详细信息
Not only the isothermal oxidation behaviors at 900-1 300℃for 20 h in air of bulk Ti3AlC2 with 2.8% TiC which was sintered by hot pressing with the additive of silicon, but also the cyclic oxidation behavior at 1100-1 300℃for 30 cycles, were investigated by using TG, XRD, SEM. The isothermal and cyclic oxidation behaviors generally follow a parabolic rate law. The parabolic rate constants of the former increased from 1.39×10-10 kg2/(m4·s) at 900℃to 5.56×10-9 kg2/(m4·s) at 1 300℃. The calculated activation energy is 136.45 kJ/mol. The oxidation products areα-Al2O3 and little TiO2 at 900-1 000℃, however when the temperature is raised up to 1 200℃, TiO2 partially reacts to Al2TiO5, and the reaction is completed at 1 300℃. This demonstrates that Ti3AlC2 has excellent oxidation resistance and good thermal shock because the dense continuous oxide scale consists of massα- Al2O3 and little TiO2 and/or Al2TiO5. Generally, the oxide scale is grown by the inward diffusion of O2- and the outward diffusion of Ti4+ and Al3+.
暂无评论