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检索条件"机构=2Science and Technology on Reliability Physics and Application of Electronic Component Laboratory"

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Characterization of contamination degradation of mems accelerometer comb structures

Characterization of contamination degradation of mems accele...

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IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)

作者： Jinchuan Chen Xiao Wen Yingyu Xu Qinwen Huang Wanchun Ren Chunhua He Southwest University of Science and Technology Mianyang China Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China School of Computer Guangdong University of Technology Guangzhou China

ISBN: (数字)9798350359831

ISBN: (纸本)9798350359848

The effect of organic contamination on the sensitive comb structure of accelerometers in microelectromechanical systems (MEMS) is hardly involved in the original MEMS reliability study, because the existing technology can guarantee chip packaging in the absence of contamination, but with the advancement and popularity of multi-chip packaging technology, some chip devices may have organic substances volatilised and have an effect on the strength of the comb structure of accelerometer devices, thus affecting the service life of the devices. However, with the progress and popularity of multi-chip packaging technology, some of the chip devices may have volatilisation of organic substances, which may affect the strength of the acceleration sensor comb, and thus the service life of the device. In this paper, the theoretical derivation and experimental verification method to complete the study, and in the organic pollution test, organic substances will mainly have an impact on the strength of the comb structure of the acceleration sensor, so this paper focuses on the comb structure before and after the organic pollution of the strength of the change. The results of the experimental study show that the strength of the comb structure of the MEMS device decreases to a certain extent after the contamination compared with that before the contamination. This research result provides a theoretical basis for finding the failure inducing factors in the MEMS failure mode and predicting the device life.

关键词： Micromechanical devices Accelerometers Microelectromechanical systems Degradation Pollution Nanoelectromechanical systems Life estimation

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A Wideband Low-Noise Amplifier for 5G and Satellite Communication

A Wideband Low-Noise Amplifier for 5G and Satellite Communic...

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International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Feng-Yuan Mao Zhi-Jian Chen Bin Li Zhao-hui Wu Quansheng Guan Shaowei Liao Xiaoling Lin School of Microelectronics South China University of Technology Guangzhou Guangdong China Application of Electronic Component Laboratory The Science and Technology on Reliability Physics China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou Guangdong China

ISBN: (数字)9798350389968

ISBN: (纸本)9798350389975

This paper presents an 18.5-32.5 GHz low-noise amplifier (LNA) in 0.1-μm Gallium Nitride (GaN) process for 5G base station applications. Transmission lines are introduced between decoupling capacitors to increase the isolation of RF choke. A parallel RC network is used in the last stage to improve wideband output return loss. The proposed LNA shows a peak gain of 23.2 dB with a 3-dB bandwidth from 18.5 to 32.5 GHz. The in-band noise figure (NF) is 0.65-0.9 dB. The input return loss and output return loss are both better than 10 dB. The LNA consumes 290mW and occupies a compact chip area of 2.2 ×1.3 mm 2 .

关键词： Radio frequency Low-noise amplifiers Noise figure Power transmission lines 5G mobile communication Gallium nitride Inductors

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Effects of Porosity on Thermal Resistance Aging at Submicron Silver Interfaces

Effects of Porosity on Thermal Resistance Aging at Submicron...

引用

International Conference on (ICEPT) electronic Packaging technology

作者： Jian Wang Mowen Zhang Chao Yang Zhiyuan He Zhiwei Fu Jia-Yue Yang School of Energy and Power Engineering Shandong University Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Jinan China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China School of Energy and Power Engineering Shandong University Science and Technology on Reliability Physics and Application of Electronic Component Laboratory CEPREI Guangzhou China School of Energy and Power Engineering Shandong University Optics & Thermal Radiation Research Center Institute of Frontier and Interdisciplinary Science Shandong University Jinan China

The thermally conductive silver adhesive is widely used as a thermal interface material for thermal management of electronic device packaging. In engineering applications, the evolution of holes inside the silver adhesive interface seriously affects its service life. In this paper, we designed high-temperature accelerated aging experiments for submicron silver adhesive interfaces. The evolution of the pores during interfacial aging was characterized by X-ray scanning and scanning electron microscopy and counting the porosity. The temperature fields of interfaces with different porosities were simulated using finite element simulation. Both experimental and simulation results show that the increase in porosity accelerates the aging of the silver-glue interface. When the porosity is increased to 30%, the simulated equivalent thermal conductivity reduces by 52.50%, and the experimentally tested interfacial thermal resistance increases by 71.58%. The experimental test results of the interfacial thermal resistance are more significant than the simulated results, indicating that porosity is not the only factor influencing accelerated interfacial aging. It provides a theoretical and experimental basis for further research on porosity accelerated aging of silver adhesive interfaces.

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Vibration reliability Analysis of the Gold Wire Leads of MEMS Inertial Devices

Vibration Reliability Analysis of the Gold Wire Leads of MEM...

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International Conference on reliability, Maintainability and Safety,ICRMS

作者： Yingyu Xu Chunhua He Qinwen Huang CEPREI Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China Guangdong University of Technology School of Computer Guangzhou China

ISBN: (数字)9798350329988

ISBN: (纸本)9798350329995

With the rapid development of the Internet of Things (IoT), MEMS inertial devices are being employed for various applications such as in smart homes, unmanned aerial vehicles, and aerospace. The MEMS inertial devices are exposed to harsh vibration environments, and the deformation of the internal bonding wire may cause reliability issues such as short circuits and fracture failures. The reliability of the gold wire leads of MEMS inertial devices in practice is theoretically analyzed to study the failure mechanisms. The failures caused by the resonance of the wire leads attributed to the mechanical vibration at different temperatures are studied by establishing finite element method models, and the inherent frequency and stress distribution of the wire lead are obtained. The root of the wire lead has the highest stress, and it is the weakest link. Further, the reliability of the wire lead can be improved by increasing its diameter or shortening its length.

关键词： Vibrations Micromechanical devices Gold Simulation Resonant frequency reliability theory Lead reliability engineering Wire Stress

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4.9 GHz A1-mode Lamb Wave Resonator based on Partially Released LN Film

4.9 GHz A1-mode Lamb Wave Resonator based on Partially Relea...

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International Conference on electronics technology (ICET)

作者： Zhuo Zhang Ting-Yang Zhang Qin-Wen Huang Shao-Hua Yang Xiao-Sheng Zhang Cheng Tu School of Electronic Science and Engineering University of Electronic Science and Technology of China Chengdu China Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China

This work presents a 4.9 GHz ${A}_{1}$ -mode Lamb wave resonator (LWR) based on partially released Z-cut lithium niobate (LN) thin film, which is aimed at application of 5G communication in N79 band. The designed LWR utilizes the horizontal electric field for efficient excitation of first-order antisymmetric (A 1 ) mode in the acoustic cavity made of LN film. The fabrication process for the designed LWR is described and validated. The measured results show that the partially released devices achieve large electromechanical coupling coefficient (k$_{t}^{2}$=27%), which is comparable to that of reported fully released devices. The measured results are in good agreement with the finite element (FE) simulations. The presented partially released LWRs show prospect to improve the mechanical robustness of such devices without much sacrifice to performance.

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Effect of Residual Stress After Reflow Soldering of Ball Grid Array Mixed Solder Joint on Thermal Cycling reliability

Effect of Residual Stress After Reflow Soldering of Ball Gri...

引用

International Conference on reliability, Maintainability and Safety,ICRMS

作者： Fangzhou Chen Jiahao Liu Jianyu Wu Hao Zhao Hui Xiao Tao Lu Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Guangzhou China Reliability Research and Analysis Center Ceprei Laboratory China Electronic Product Reliability and Environmental Testing Guangzhou China

ISBN: (数字)9798350329988

ISBN: (纸本)9798350329995

This study investigates the influence of residual stress after reflow soldering on the thermal cycling of a ball grid array (BGA). The devices were analyzed after thermal cycling using methods such as macroscopic morphology observation and microscopic structure evolution. The residual stress and strain of an Sn63Pb37/Sn3.0Ag0.5Cu mixed BGA structure were obtained by applying the reflow soldering temperature profile through finite element simulation. Subsequently, temperature cycling loads were applied to the BGA package model after reflow soldering. The thermal fatigue life of the BGA solder joints was predicted using the Darveaux fatigue model based on the strain energy damage. The results showed that considering the residual stress after reflow soldering in the simulation, the equivalent plastic strain was relatively large. The maximum stress was located at the corners where the solder joints contacted the PCB and chip. Microscopic cracks were formed on the interface at the chip-end in critical solder joints. The life prediction indicated that the relatively high residual stress generated during the reflow soldering process had negligible effect on the thermal fatigue performance of the hybrid BGA solder joints.

关键词： Semiconductor device modeling Fatigue Residual stresses Finite element analysis Thermal analysis reliability Plastics Thermal stresses Reflow soldering Strain

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A Novel Learning Approach to MIMO Networked Control Systems with Uncertain Parameters

A Novel Learning Approach to MIMO Networked Control Systems ...

引用

Prognostics and System Health Management Conference (PHM-Qingdao)

作者： Hanguang Jia School of Automation Science and Engineering South China University of Technology National Key Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component Guangzhou China

This paper proposes a new learning approach to solve control design problems involving uncertain parameters in MIMO networked control systems. This approach combines neural network technology with control system modeling in real-time through learning and adaptation of data, thereby achieving stability and optimization of network-based control systems. The authors first establish a network-based control model and then improve it by replacing the linear parameters with nonlinear ones. To ensure real-time and stable communication between devices, this method also uses adaptive iterative learning control (AILC) technology and error feedback control technology. A network-based control system is used to verify the effectiveness of the proposed approach. The results show that this approach is effective in achieving sufficient communication between devices, adapting to uncertain parameters, and improving control performance.

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Fault Diagnosis Algorithm for Power Module Based on A Hybrid Attention Network

Fault Diagnosis Algorithm for Power Module Based on A Hybrid...

引用

Prognostics and System Health Management Conference (PHM-Qingdao)

作者： Lubin Yu Zhenwei Zhou Yuhang Huang Junbin Liu Shilie He Pengfei Yu Linghui Meng Danni Hong Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China Guangzhou Institute of Technology Xidian University Guangzhou China

Fault diagnosis has a significant contribution to the reliability of the power module, the stability and accuracy of the fault diagnosis algorithm based on single-channel data have major limitations, and existing fault diagnosis algorithms based on multi-channel data have limitations such as insufficient capability of extracting features and low utilization rate of inter-channel correlation information. Therefore, in this paper, a multi-channel fault diagnosis algorithm for power modules based on a hybrid attention network is proposed, aiming at solving the problems of limited fault characterization capability of single-channel data and insufficient feature extraction of existing multi-channel input models. The hybrid attention module of this network adopts a mechanism that combines time attention and channel attention to extract the features of multi-channel data from both channel and time series dimensions of the input data in a holistic manner. The experiments have demonstrated that the hybrid attention network proposed in this paper achieves an accuracy of 99.40% in the multi-channel fault diagnosis test set, which is highly state-of-the-art and practicable, and can provide new ideas and methods for the research in fault diagnosis.

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Failure Mechanisms Investigation of Through Glass via (TGV) Under Thermal Annealing and Shock

Failure Mechanisms Investigation of Through Glass via (TGV) ...

引用

International Conference on (ICEPT) electronic Packaging technology

作者： Haozhong Wang Chunchao Lai Bingxu Ma Xiaodong Jian Si Chen Hongtao Chen Laiwang Fang Xiaofeng Yang Sauvage Laboratory for Smart Materials Harbin Institute of Technology (Shenzhen) Shenzhen China The Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China Laboratory of Science and Technology on Integrated Logistics Support National University of Defense Technology Changsha China

ISBN: (数字)9798350353808

ISBN: (纸本)9798350353815

2.5D advanced packaging technology is a promising solution for “more than Moore”. TGV interposer has attracted growing attention for the high-frequency applications in 2.5D advanced packaging due to its low dielectric constant and loss tangent, etc. Some typical failure modes of TGV structure were discussed in the previous literatures. However, there is a lack of systematic research on the failure mechanisms of TGV under annealing and thermal shock condition. This paper focused on the failure mechanisms of TGV under different thermal conditions using both experimental and simulation methods. Annealing experiment was carried on the TGV sample at 400 °C for different periods. Crack appeared in the glass at the top corner of TGV after annealed at 400 °C for 5 min. With the increasing annealing period from 5 min to 30 min at 400 °C, the protrusion height of TGV increased from $0.61\ \mu\mathrm{m}$ to $1.21\ \mu \mathrm{m}$ , and the simulated protrusion height increased from $0.50\ \mu \mathrm{m}$ to $0.89\ \mu \mathrm{m}$ . The FEA simulation result showed that stress concentration was located in the top corner of TGV, the stress was 1456.63 MPa at 400 °C for 5 min. TGV samples were subjected to 0, 300, 500 and 1000 cycles under the condition of $-55\ ^{\circ}\mathrm{C}$ to 150 °C. Glass will crack around TGV-RDL after 300 thermal shock cycles. The stress was found concentrated around TGV-RDL according to FEA, which was 370.34 MPa. Crack appeared at the bottom corner of the TGV after 1000 cycles. The equivalent plastic strain at the bottom corner of TGV increased from 1.09 to 3.64 with the cycles increased from 300 to 1000. This article analyzes failure mechanisms of TGV and provides design guidelines for the pretreatment process of TGV. The simulation result offers information for the reliability evaluation of TGV.

关键词： Annealing Simulation Thermal shock Failure analysis Glass Simulated annealing reliability

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Degradation Behavior and Mechanisms of E-mode GaN HEMTs with p-GaN Gate under High Temperature Gate Bias Stress 12

Degradation Behavior and Mechanisms of E-mode GaN HEMTs with...

引用

12th IEEE Global reliability and Prognostics and Health Management, PHM-Nanjing 2021

作者： Chen, WenYang Chen, Y.Q. Geng, KuiWei School Of Electronic And Information Engineering South China University Of Technology Guangzhou China Science And Technology On Reliability Physics And Application Of Electronic Component Laboratory Guangzhou China

ISBN: (纸本)9781665401302

In this work, the degradation behavior and the physical mechanism of the AlGaN/GaN HEMTs with p-GaN gate after HTGB stress were investigated. The experiment results show that the threshold voltage ($V{th})$ and gate leakage currents (Igss) increase obviously. At the same time, the drain-source current (Ids) decreases significantly after HTGB stress. However, the on-state resistance (Ron) and the blocking characteristics have no change. Furthermore, obvious decrease was observed in the $C{g}-V{g}$ curve, and it shows that the interface state increases significantly after HTGB stress. The physical mechanism of the degradation behavior could be attributed to electromigration and the formation of new traps at p-GaN layer, AlGaN barrier, p-GaN/AlGaN interface, and AlGaN/GaN interface. This work could be a useful reference for the study of AlGaN/GaN HEMTs. © 2021 IEEE.

关键词： Gallium nitride

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