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SSRN 2023年

作者： Yang, Bin Zhang, Hong Wang, Qianjin Li, Bo Liu, Weishu College of Physics and Electronic Information Yunnan Normal University Yunnan Kunming650500 China Department of Materials Science and Engineering Southern University of Science and Technology Guangdong Shenzhen518055 China The Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou510610 China

Given the inherent limitations of sensing technologies, this study aimed to investigate the transformative effect of high-energy X-rays on the enhancement of piezoelectric and pyroelectric properties of poly(vinylidene fluoride-co-trifluoroethylene) (P(VDF-TrFE), 70/30%) films. Our investigation showed a remarkable improvement in the pyroelectric and piezoelectric responses in the P(VDF-TrFE) films after irradiation. When irradiated with 1 Mrad X-rays, the P(VDF-TrFE) films exhibit a pyroelectric coefficient of 252 μC m-2 K-1, which is three times higher than that of non-irradiated films, and the piezoelectric coefficient increased to 33 pC N-1. The sensitivity to temperature changes was measured to be 15.66 V K-1 from 0.05 K to 5 K, respectively. In addition, the pressure sensitivity in the range from 0.025 to 10 kPa and 10 to 50 kPa were determined to be 3.62 V kPa-1 and 0.63 V kPa-1. This considerable increase in performance is primarily due to a significant improvement in crystallinity, which increased from 45% to 80%. Consequently, our results strongly suggest that the application of X-rays to P(VDF-TrFE) films is a reliable and effective method to improve both pyroelectric and piezoelectric responses. © 2023, The Authors. All rights reserved.

关键词： Irradiation

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Using Load Transient Waveform to Analyze Fault Propagation Mechanism in DC-DC Switching Power Supply

Using Load Transient Waveform to Analyze Fault Propagation M...

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Progress in Electromagnetic Research Symposium (PIERS)

作者： Junliang Wan Pengfei Yu Qiang-Ming Cai Xin Cao Longjian Zhou Haoran Li Yuyu Zhu Jun Fan School of Information Engineering Southwest University of Science and Technology Mianyang China Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component Guangzhou China Robot Technology Used for Special Environment Key Laboratory of Sichuan Province Mianyang China Tianfu Institute of Research and Innovation Southwest University of Science and Technology (SWUST-TIRI) China

ISBN: (数字)9798350375909

ISBN: (纸本)9798350375916

The degradation of certain components within DC-DC power supplies can lead to abnormal performance, resulting in the occurrence of faults. The degradation of components can cause changes in output voltage and current, and the different degradation characteristics of components have different impacts on the characteristics of output parameters. Therefore, it is necessary to master this impact relationship, that is, the fault propagation mechanism can be used to effectively diagnose faults and manage health. Studying the fault propagated mechanism is an important prerequisite for fault diagnosis. Output terminals of DC-DC power supply are usually connected in parallel with electrolytic capacitors. The function of electrolytic capacitors is to filter, filtering out most of the AC part of the output voltage, and reducing the ripple of the output voltage. Electrolytic capacitors are the most vulnerable components to failure in switching power supplies, with approximate 60% of failed components being electrolytic capacitors. Therefore, the fault propagation mechanism of electrolytic capacitors is a key research topic. Most research focuses on the fault propagation mechanism based on steady-state output signals. This article studies the fault propagation mechanism based on transient output signals. Through experimental testing, the impact of parameter degradation of electrolytic capacitors on the transient waveform of output voltage and the mapping relationship between capacitor degraded parameters and transient waveform are studied. The method is to analyze the voltage waveform when the current step changes using equivalent degradated experiments of capacitors. Its advantage lies in the fact that transient waveforms are more sensitive than steady-state waveforms and require lower sampling rates, making it easier to analyze the degradated characteristics of electrolytic capacitors. For power supplies with simple structures, data is collected through simulation. For commerc

关键词： Degradation Resistance Power supplies Capacitors Voltage Switches Capacitance

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A Reconfigurable Active-RC Filter with Variable Gain and An RC-Reused Tuning Circuit

A Reconfigurable Active-RC Filter with Variable Gain and An ...

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IEEE Asia-Pacific Conference on Circuits and Systems

作者： Shan Gao Zhi-Jian Chen Xiangfeng Sun Siyuan Yang Bin Li Xiao-Ling Lin School of Microelectronics South China University of Technology Guangzhou China Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory Guangzhou China

A 3 rd -order reconfigurable fully differential active-RC low pass filter (LPF) is presented in this paper. It provides Butterworth response with tunable 3dB-bandwidth from 200KHz to 40MHz and variable gain from OdB to 30dB in 1dB steps. The Tuning circuit presented in this paper is more area-saving by using the R-C array of the filter instead of additional R-C array. The filter is designed in SMIC 55nm CMOS technology and dissipates 6.5mW for a supply voltage of 1.3V. Post-simulation shows that the 3 rd -order harmonic intercept point (IIP3) is larger than 24.4dBm and spurious-free dynamic range (SFDR) is 57.7dB while the gain and bandwidth of the filter are set to OdB and 14MHz respectively.

关键词： Wireless communication Low-pass filters Bandwidth Voltage Receivers CMOS technology Harmonic analysis

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An Investigation of Time Dependent Dielectric Breakdown (TDDB) on Carbon Nanotube Field-Effect Transistors (CNTFETs)

An Investigation of Time Dependent Dielectric Breakdown (TDD...

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International Conference on (ICEPT) electronic Packaging technology

作者： Tang Chao Rui Gao Chao Li Long Wei Yichi Zhang Zhizhe Wang Guangzhou Wide Bandgap Semiconductor Innovation Center Guangzhou Institute of Technology Xidian University Guangzhou China National Key Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component The Fifth Electronics Research Institute of the Ministry of Industry and Information Technology Guangzhou China

ISBN: (数字)9798350353808

ISBN: (纸本)9798350353815

As technology nodes continue to scale down, silicon-based integrated circuits have approached physical limits. In order to sustain Moore's Law, new materials have become a major focus of research in the field of integrated circuits, with carbon-based integrated circuits considered one of the most promising new materials due to their superior electrical characteristics. Currently, reliability is a primary concern constraining the development of carbon-based integrated circuits. Time-dependent dielectric breakdown (TDDB) is a common reliability issue in field-effect transistors, and it is also prevalent in CNTFETs. This paper employs the measure-atress-measure (MSM) method to investigate the TDDB phenomenon in CNTFETs, applying 3 different constant electrical stress on multiple devices and extract the time to breakdown (tbd). Experiment results show tbd follows weibull distribution, same as silicon MOSFETs, but with a much smaller voltage accelerate factor of 16.91 compare to the typical values of silicon. It is speculated this might be due to the inferior oxide/CNT interface quality compared to silicon allows generated trap to form a leakage path under relatively low electric filed stress.

关键词： Integrated circuits MOSFET Silicon Time measurement CNTFETs Dielectric breakdown Transistors

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Electromagnetically-induced-absorption-like ground state cooling in a hybrid optomechanical system

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Chinese physics B 2025年第4期 423-432页

作者：董耀勇郑学军王登龙赵鹏 School of Electromechanical Engineering Guangdong University of Technology School of Mechanical Engineering and Mechanics Xiangtan University School of Physics and Optoelectronics Xiangtan University Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute

We present a scheme for the electromagnetically-induced-absorption(EIA)-like ground state cooling in a hybrid optomechanical system which is combined by two-level quantum systems(qubits) and a high-Q optomechanical cavity. Under the weak qubit-cavity coupling, the system exhibits an EIA-like effect and this effect is caused by quantum destructive interference that is distinct from the conventional EIA effect driven by quantum constructive interference. More importantly,the EIA-like cooling mechanism can significantly enhance the cooling rate of the hybrid system, enabling the final phonon number beyond the classical cooling limit in the strong optomechanical coupling regime. Meanwhile, the cooling effects of the EIA case is better than that of the normalmode splitting case under the same optomechanical coupling strength and qubit dissipation rate.

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Effect of X-rays Irradiation on the reliability of 850nm High-speed VCSEL

Effect of X-rays Irradiation on the Reliability of 850nm Hig...

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International Conference on (ICEPT) electronic Packaging technology

作者： Jide Zhang Wenyuan Liao Shaohua Yang Guoguang Lu Xiaohua Wang Zhipeng Wei College of Physics Changchun University of Science and Technology Changchun China College of Physics & Electronic Information Baicheng Normal University Baicheng China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory The Fifth Electronic Research Institute of the Ministry of Industry and Information Technology Guangzhou China Zhongshan Institute Changchun University of Science and Technology Zhongshan China

With the development of nuclear engineering and aerospace industry, the requirement for reliability of optical communication systems under a radiation environment is more and more strict. To explore the reliability of vertical-cavity surface-emitting lasers (VCSELs) in radiation environment, the photoelectric performances and lifetime of 850 nm high-speed VCSELs under X-rays irradiation are investigated. The results show that the gradual degradation of the photoelectric properties of VCSEL is caused by ionization damage. The performances of VCSEL are slightly improved under a certain dose, and the phenomenon can be explained as the radiation-induced ordering effect in crystals. Deposited energy can promote the ordering of crystals near the quantum well interface so as to compensate or even overcome the influence of ionization damage. The results of a high current accelerated life test show that the lifetime of VCSELs at the operating current is shortened with the increase in the total irradiation dose. These results provide support for the application of VCSEL and the data communication and instrument system containing VCSEL in harsh space radiation environments.

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Analysis of Power Cycle Aging Test for SiC MOSFET

Analysis of Power Cycle Aging Test for SiC MOSFET

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Prognostics and System Health Management Conference (PHM-Qingdao)

作者： Zhouyou Zheng Linghui Meng Xin Li Bin Ruan Haotian Cui School of Electrical and Information Engineering Anhui University of Science and Technology Huainan Anhui China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guang zhou Guang dong China School of Information Engineering Southwest University of Science and Technology Mianyang China

Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are gradually replacing silicon (Si)-based devices as the core devices for power conversion in high-temperature, high-pressure, and high-frequency applications due to their superior material properties. The long-term reliability of SiC MOSFETs has become a research focus. Power cycling tests, an important aging test for evaluating device reliability, can reflect the reliability under real working conditions to some extent. The test is conducted using a constant on/off time mode, and the on-state resistance and body diode voltage drop of the devices are measured online during the aging test. The experimental results show that an increase in on-state resistance during power cycling tests causes an increase in junction temperature, which leads to wire bond aging and eventually results in SiC MOSFET failure.

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Enhanced Inverter Hybrid Fault Diagnosis Through RAM and CNN Integration

Enhanced Inverter Hybrid Fault Diagnosis Through RAM and CNN...

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International Conference on reliability, Maintainability and Safety,ICRMS

作者： Linghui Meng Lin Li Yuanyuan Jiang Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou Guangdong China Anhui University of Science and Technology School of Institute of Artificial Intelligence Huainan Anhui China Anhui University of Science and Technology School of electrical and Information Engineering Huainan Anhui China

ISBN: (数字)9798350329988

ISBN: (纸本)9798350329995

Deep learning has been widely used in inverter open-circuit fault diagnosis; however, traditional neural networks only extract signal features of inverter faults without distinguishing between significant and minor features. To address this limitation, this paper proposes a diagnostic method for inverter hybrid faults that combine reverse attention mechanism (RAM) and convolutional neural networks. The proposed method highlights important features by utilizing RAM to reverse the attention and prune the minor features. In addition, long short-term memory is used to learn temporal information between the features. Finally, fault classification is performed using fully connected layers. Simulation experiments indicate that the proposed diagnostic method significantly improves fault diagnosis accuracy. Compared to traditional neural network fault diagnosis methods, our proposed method achieves up to 8.07% higher diagnosis accuracy, thereby validating its effectiveness.

关键词： Fault diagnosis Deep learning Accuracy Neural networks Random access memory Feature extraction Inverters Safety Convolutional neural networks Long short term memory

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A 4-stage Low-Noise Amplifier with 1.52-1.67dB Noise Figure

A 4-stage Low-Noise Amplifier with 1.52-1.67dB Noise Figure

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International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Feng-yuan Mao Bin Li Zhi-Jian Chen Zhao-hui Wu Xiao-Ling Lin School of Microelectronics South China University of Technology Guangzhou Guangdong China Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory Guangzhou China

ISBN: (纸本)9781665482271

In this paper, a 23-27GHz MMIC low-noise amplifier (LNA) using $0.15\mu\mathrm{m}$ Gallium Nitride (GaN) process is proposed. By introducing a 5-element low-Q network between stages, the proposed 4-stage LNA achieves a good balance among bandwidth, noise figure (NF), gain and input return loss. The LNA exhibits a peak gain of 25.2dB and a minimum NF of 1.52dB with a 3-dB bandwidth from 23 to 27GHz. The input return loss and output return loss are better than 10 dB and 15 dB respectively. The LNA MMIC can be powered-up using a +5V DC power supply and it consumes total DC current of 30 rnA. The overall chip size is 2.7 $\times 1.8\text{mm}^{2}$ .

关键词： Low-noise amplifiers Noise figure Microwave technology Microwave integrated circuits Power supplies RNA Millimeter wave technology

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A wide-band Low-Noise Amplifier with 0.537-0.677dB Noise Figure

A wide-band Low-Noise Amplifier with 0.537-0.677dB Noise Fig...

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International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Zhi-Jian Chen Yang Li Honglin Zhang Bin Li Xiao-Ling Lin School of Microelectronics South China University of Technology Guangzhou Guangdong China Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory Guangzhou China

ISBN: (纸本)9781665482271

Gallium nitride(GaN) process technology is gradually being used in the design of low-noise amplifiers(LNA) to obtain low-noise performance and high power tolerance ability. This paper presents a GaN monolithic microwave integrated circuits(MMIC) LNA operating in 21-36GHz frequency band, which is designed by 100nm GaN-on-silicon(Si) process. The proposed LNA uses a hybrid structure of common source and cascode. Simulation results show that this LNA can achieve a noise figure of 0.537-0.677dB and a gain of 28.3-30dB. The input and output return loss is better than −10dB, and the stability factor is greater than 1 within 0∼100GHz. P1dB and OIP3 are 16.5dBm and 26dBm, respectively. The proposed LNA has the performance advantages of low noise, high gain, and good linearity.

关键词： Noise figure Low-noise amplifiers Gallium Simulation Millimeter wave technology MMICs Microwave circuits

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