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SSRN 2024年

作者： Niu, Xiang Jiang, Yuleng Liang, Wei Liu, Huanwei Jian, Xiaodong Chen, Xianyi Zeng, Wenhan Xu, Mingtao Qie, Dan Zhu, Zichun Liu, Yufeng Tang, Yi Gong, Weiping Zhao, Xiaobo Yao, Yingbang Liang, Bo Tao, Tao Lu, Sheng-Guo Guangdong Provincial Research Center on Smart Materials and Energy Conversion Devices Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter School of Materials and Energy Guangdong University of Technology Guangzhou510006 China School of integrated Circuits Guangdong University of Technology Guangzhou510006 China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory The 5th Electronics Research Institute The Ministry of Industry and Information Technology Guangzhou510610 China School of Physics and Optoelectronic Engineering Guangdong University of Technology Guangzhou510006 China Department of Materials Science and Engineering National University of Singapore 9 Engineering Drive 1 Singapore117575 Singapore Guangdong Provincial Key Laboratory of Electronic Functional Materials and Devices Huizhou University Guangdong Huizhou516001 China

Developing ecologically benign lead-free dielectrics with overall outstanding energy storage properties (ESP) is a fundamentally significant demand and challenge for the applications in pulse power systems. Herein, a new type of lead-free (0.74-x)Bi0.5Na0.5TiO3-0.06BaTiO3-0.2SrTiO3-xBi(Mg0.5Zr0.5)O3 (NBT-xBMZ) relaxor ferroelectric thick film ceramics were designed and prepared via compositional and microstructural optimization. Doping Bi(Mg0.5Zr0.5)O3 (BMZ) effectively widened the bandgap, introduced polar nanoregions, enhanced the relaxor ferroelectric characteristics, improved the impedances, and ultimately improved the dielectric breakdown strength (DBS) as well as the ESP. As confirmed by both the selected area electron diffraction patterns and the Rietveld refinement of X-ray diffraction patterns, multiphase coexistence structure was successfully constructed, resulting in merged polarization and delayed polarization saturation. Multiphase coexistence structure, pinched polarization-electric field hysteresis loops and ultrahigh DBS collectively boost the ESP. Remarkably, a recoverable energy storage density of 15.79 J/cm3 and an energy storage efficiency of 92.86% were achieved in NBT-0.22BMZ thick film. Benefiting from the microstructural optimization, excellent thermal stability (20–160 °C), frequency stability (1–200 Hz), and fatigue endurance (> 104 cycles) were realized for the same composition. Additionally, the NBT-0.22BMZ thick film also exhibited a large power density of 582.47 MW/cm3 and an ultrafast discharge speed of ~44.0 ns. This work provides a novel strategy to develop next-generation dielectric capacitors with superior energy storage properties for applications in advanced pulse power systems. © 2024, The Authors. All rights reserved.

关键词： Polarization

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Degradation behavior and mechanism of SiC power MOSFETs by total ionizing dose irradiation under different gate voltages

Degradation behavior and mechanism of SiC power MOSFETs by t...

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Workshop on Wide Bandgap Power Devices and applications in Asia (WiPDA Asia)

作者： Kexin Gao Yiqiang Chen Shuaizhi Zheng Min Liao Xinbing Xu Meng Lu Xiangtan University Hunan China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory The No.5 Electronics Research Institute of the Ministry of Industry and Information Technology Guangzhou Guangdong China

ISBN: (纸本)9781665448178

In this work, the degradation behavior of the SiC power MOSFETs under total ionizing dose (TID) irradiation at different gate voltages was investigated. To simulate the radiation environment, 60CO was used as the $\gamma$ -ray source, the dose rate was 50rad/s, and the cumulative absorbed dose was 1M Rad. The experimental results show that when a gate voltage is impressed to the test device, the threshold voltage is obviously negative shift, the output characteristic and capacitance curve also have negative shift phenomenon. Meanwhile, the device with positive gate voltage has more obvious shift than negative bias voltage. Furthermore, the blocking characteristics of the device had a noticeable change after irradiation, it means that the TID effect has an effect on the body diode. Changes in gate capacitance were also analyzed. The reason for this degradation could be that the high-energy particle radiation exciting plenty of electron-hole pairs in the oxide layer of MOSFET, the electrons flow out of the metal electrode after radiation, and the holes are captured by the oxide layer to form a new interface trap charge. This paper may have some reference value for the application of SiC power MOSFET in aerospace.

关键词： Degradation Performance evaluation MOSFET Silicon carbide Photonic band gap Asia Logic gates

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Degradation mechanism of D-mode GaN HEMT based on high temperature reverse bias stress

Degradation mechanism of D-mode GaN HEMT based on high tempe...

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Workshop on Wide Bandgap Power Devices and applications in Asia (WiPDA Asia)

作者： Meng Lu Yiqiang Chen Min Liao Chang Liu Shuaizhi Zheng Kexin Gao Xiangtan University Xiangtan China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory The No.5 Electronics Research Institute of the Ministry of Industry and Information Technology Guangzhou Guangzhou China

ISBN: (纸本)9781665448178

This paper systematically discusses the degradation of reliability of depleted gallium nitride devices under short to long-term high temperature reverse bias (HTRB) stress. The electrical parameters of the device during the whole process were obtained by the stress-measure-stress alternation experimental scheme. We believe that the Schottky barrier decreases and the channel conduction resistance increases in the process of high temperature and high field stress. This conclusion can be verified by the gate-lag characteristics. It is a new phenomenon that capacitor degradation can be divided into three stages in the experiment. Further analysis shows that the device has three processes: dielectric layer consumption-AlGaNlGaN layer interface donor state increase-AlGaN barrier layer degradation FN emission and trap-assisted tunneling. There is also a positive correlation between capacitance and gate leakage. When the channel is rapidly depleted, the capacitance decreases gradually and the leakage reaches saturation. Current saturation is mainly because the external voltage has little effect on the longitudinal electric field between Schottky electrode and Ohm electrode, but has a great effect on the transverse electric field. The conclusion of this paper will be of reference significance to the manufacturing process and the life of the device under normal operation.

关键词： Degradation Electrodes Temperature Asia HEMTs Capacitance reliability

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Failure mechanism analysis on copper-filled TSV interposer based on transient thermal mechanical stress simulation 29

Failure mechanism analysis on copper-filled TSV interposer b...

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29th European Safety and reliability Conference, ESREL 2019

作者： Chen, Yuan Zhang, Peng Su, Wei Huang, Hongzhong Lai, Ping Lin, Xiaoling En, Yunfei Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Fifth Electronics Research Institute Ministry of Industry and Information Technology China School of Mechanical and Electrical Engineering University of Electronic Science and Technology of China China Analysis and Test Center South China University of Technology China

ISBN: (纸本)9789811127243

With the development of 3D integrated packaging, Through Silicon Via (TSV) has become one of the most promising technologies in 3D stacking package. TSV three-dimensional integrated device will gradually fail under the joint effect of thermal mechanical stress, electrical stress and other stress, which will greatly affect the reliability of the TSV three-dimensional device. In this paper, the reliability of TSV interposer under thermal cycling stress is analyzed. The thermo-structural coupling model under the thermal cycling stress of typical TSV interposer is established. In addition, thermal cycling experiment has been performed to verify the simulation results. The physical failure mechanism of the copper-filled TSV is confirmed by the transient thermal mechanical stress simulation analysis. It is found that the failure modes are related to the stress distribution and displacement form of TSV. The simulation results are in good correspondence with the experimental results. © 2019 European Safety and reliability Association. Published by Research Publishing, Singapore.

关键词： Finite element method

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Study on Electrothermal Characteristics of the Reverse-Conducting IGBT (RC-IGBT) 21

Study on Electrothermal Characteristics of the Reverse-Condu...

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21st International Conference on electronic Packaging technology, ICEPT 2020

作者： Chen, Yuan Zhang, Peng Hu, Xiaofeng Huang, Hong-Zhong Lai, Ping He, Zhiyuan Chen, Yiqiang Fu, Zhi Wei Liu, Chang Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Fifth Electronics Research Institute of Ministry of Industry and Information Technology Guangzhou China School of Mechanical and Electrical Engineering University of Electronic Science and Technology of China Chengdu China South China University of Technology Guangzhou China

ISBN: (数字)9781728168265

ISBN: (纸本)9781728168265

The reverse-conducting IGBT RC-IGBT is a new structure device, which integrates an IGBT chip and a fast recovery diode (FRD) chip on a single chip. Compared with traditional IGBT, the RC-IGBT has many advantages such as high power density, small size, high reliability and low cost. However, its complex structure and process, as well as snap-back effect during forward conduction, lead to a different electrothermal characteristics from traditional IGBT. In this paper, we study the electrothermal characteristics of RC-IGBT under four modes. The first is the temperature-sensitive characteristic analysis under constant small current mode. The second is the temperature-sensitive characteristic analysis under single-pulse high current mode. The third is the thermal resistance junction to case (Rthjc) measurement of steady-state under constant high current mode. The last is the thermal resistance junction to case (Rthjc) measurement of steady-state under the sequential pulse mode. The electro thermal characteristics test results of the RC-IGBT under four modes are discussed and compared with traditional IGBT. © 2020 IEEE.

关键词： Insulated gate bipolar transistors (IGBT)

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Negative gate bias stress effects on conduction and low frequency noise characteristics in p-type poly-Si thin-film transistors

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Chinese physics B 2019年第8期28卷 397-402页

作者： Chao-Yang Han Yuan Liu Yu-Rong Liu Ya-Yi Chen Li Wang Rong-Sheng Chen School of Electronic and Information Engineering South China University of TechnologyGuangzhou 510640China School of Automation Guangdong University of TechnologyGuangzhou 510006China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory CEPREIGuangzhou 510610China

The instability of p-channel low-temperature polycrystalline silicon thin film transistors(poly-Si TFTs)is investigated under negative gate bias stress(NBS)in this ***,a series of negative bias stress experiments is performed,the significant degradation behaviors in current-voltage characteristics are *** the stress voltage decreases from-25 V to-37 V,the threshold voltage and the sub-threshold swing each show a continuous shift,which is induced by gate oxide trapped charges or interface ***,low frequency noise(LFN)values in poly-Si TFTs are measured before and after negative bias *** flat-band voltage spectral density is extracted,and the trap concentration located near the Si/SiO2 interface is also ***,the degradation mechanism is discussed based on the current-voltage and LFN results in poly-Si TFTs under NBS,finding out that Si-OH bonds may be broken and form Si*and negative charge OH-under negative bias stress,which is demonstrated by the proposed negative charge generation model.

关键词： polycrystalline silicon thin film transistor negative bias stress low frequency noise

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Analysis of GaN HEMT Degradation under RF Overdrive Stress

Analysis of GaN HEMT Degradation under RF Overdrive Stress

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Workshop on Wide Bandgap Power Devices and applications in Asia (WiPDA Asia)

作者： YuHan Xie RongSheng Chen Chang Liu YiQiang Chen Yan Ren The School of Electronic and Information Engineering South China University of Technology Guangzhou China The Science and Technology on Reliability Physics and Application of Electronic Component Laboratory The No.5 Electronics Research Institute of the Ministry of Industry and Information Technology Guangzhou China

ISBN: (纸本)9781665448178

This work concentrated at the degradation characteristics of GaN HEMT devices when exposed to RF overdrive stress. According to results of the experiment, the drain current of GaN HEMT decreases by 35.6% from 877 mA to 564mA after RF overstress. Moreover, after the experiment, the threshold voltage has a 0.26-V positive shift, and the maximum transconductance decreases. The gate leakage current increases by three times more than that of original ones. The gate-lag characteristics also deteriorates with the increase of experimental time. After measuring the high frequency performance, the return loss of the device degrades. Based on the measurement of leakage current, the height of Schottky barrier before and after the experiment was calculated and the captured charge density was extracted as ${1.11\,\times \,10^{14}\,cm^{2}}$ by combining with the threshold voltage drift.

关键词： Radio frequency Degradation Current measurement Schottky barriers HEMTs Threshold voltage Loss measurement

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All-Fiber Electric Field Sensor with Tapered Two-Mode Fiber Structure on Dr1/Pmma Polymer

SSRN

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SSRN 2022年

作者： Fan, Pengpeng Li, Zhibin Zhou, Tianyi Han, Longwei Tang, Jieyuan Zhu, Wenguo Qiu, Wentao Zheng, Huadan Zhong, Yongchun Fang, Wenxiao Lu, Guoguang Xiong, Deng Zou, Xihua Yu, Jianhui Chen, Zhe Key Laboratory of Optoelectronic Information and Sensing Technologies of Guangdong Higher Education Institutes Jinan University Guangzhou510632 China Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications Jinan University Guangzhou510632 China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou510610 China Center for Information Photonics and Communications School of Information Science and Technology Southwest Jiaotong University Chengdu611756 China

A novel all-fiber electric field sensor based on a tapered two-mode fiber (TTMF) structure with DR1/PMMA polymer is proposed and demonstrated for the first time. The modal interferometer with HE11 and HE12 modes consists of a TTMF sandwiched between two single-mode fibers. The section of TTMF provides the uniform modal interferometer involved with HE11 and HE12 modes which can show a high sensitivity of 7500 nm/RIU. The electric field sensor is achieved due to the electro-optic Kerr effect of the DR1/PMMA polymer. The transmission spectrum exhibits a blue shift with increasing applied electric field as proved by experiments. Experimental results show that an electric field sensitivity of 1.26 dB/V and a high extinction ratio of 6.5 dB with an external voltage are applied. The device can achieve a 3 dB bandwidth of 1.4 kHz, the total harmonic distortion is less than 2.5% as the modulator function. The proposed all-fiber structure with a simple, low-cost fabrication and seamless connectivity to optical fiber systems, opens up a new mind of electric field sensors design and has potential application in the measurement of the electric field. © 2022, The Authors. All rights reserved.

关键词： Single mode fibers

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An Efficient Machine Learning-Enhanced DTCO Framework for Low-Power and High-Performance Circuit Design

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Journal of Information and Intelligence 2025年

作者： Mingyang Liu Zhengguang Tang Hailong You Cong Li Guangxin Guo Zeyuan Wang Linying Zhang Xingming Liu Yu Wang Yong Dai Geng Bai Xiaoling Lin Institute of Microelectronics Xidian University Xi’an 710071 China SMiT Group Fuxin Technology Limited Shenzhen 518000 China The Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou Guangdong Province China

The standard Design technology Co-Optimization (DTCO) involves frequent interactions between circuit design and process manufacturing, which requires several months. To assist designers in establishing a bridge between device parameters and circuit metrics efficiently, and provide guidance for parameter optimization in the early stages of circuit design. In this paper, we propose an efficient machine learning (ML)-enhanced DTCO framework. This framework achieves the co-optimization of device parameters and circuit metrics. We select the gate metal work function (WF) as the parameter to validate the effectiveness of our framework. And the ridge regression approach is used to bypass TCAD simulation, compact model extraction and cell library characterization. We reduces time consumption by at least 92% compared to traditional DTCO framework, while ensuring that errors of delay, internal power consumption and leakage power below 4ps, 0.035mJ, and 0.4uW, respectively. By adjusting the WF, we achieved a better balance between circuit delay and power consumption. This work contributes to designers exploring a broader design space and achieving a efficient DTCO flow.

关键词： Machine learning DTCO Cell library Work function Parameter extraction

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Study on acceleration life test method of thick film hybrid integrated circuits

Study on acceleration life test method of thick film hybrid ...

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2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2020

作者： Xiaowen, Zhang Hongjie, Lv Xiaoling, Lin Science and Technology on Reliability Physics and Application of Electronic Component Laboratory 110 DongGuangZhuang Road Guangzhou510610 China Research Institute of China Electronics Technology Group Corp 19 Hehuan Road High-tech Zone Hefei230088 China

ISBN: (纸本)9781728161693

In order to establish an accelerated life test method for thick film hybrid integrated circuits (HIC) and obtain its lifetime data, the accelerated life experiment of medium power thick film HIC was carried out, and the experiment results were summarized and analyzed. Based on the analysis of influencing factors of thick film HIC reliability, and the time-temperature regression in table 1 of mil-std-883h method 1015.10, three groups of comparative experiments were conducted in combination with the characteristics of the product. Group 1 is the test requirement in the detailed specification and is the comparison benchmark between group 2 and group *** difference between group 2 and group 3 is the different load. After high temperature burn in test, the degradation of thick film HIC would be accelerated and the sample failure would be caused. Failure analysis showed that high temperature burn in test can induce Au4A1 and in Kirkendall void in Au/A1 bonding system, in the following steady state life experiment, with the continuous production of Au4A1 and the Kirkendall void expanding, bonding wire contact resistance increases, eventually the bonding wire of triode V2 in the sample produced strength failure, caused PWM lose power supply, which made the sample output failure. All these fail samples are in the same group, it implys that worst experiment condition can speed up the degradation of thick film HIC, thus it is recommend that the case temperature should not exceed 125°C during the operation condition. © 2020 IEEE.

关键词： Thick films

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