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2020 International Conference on Applied physics and Computing, ICAPC 2020

作者： Su, Wei Luo, Wenhao Li, Junkui Liu, Renhuai MOE Key lab of Disaster Forecast and Control in Engineering Guangzhou510632 China Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou510610 China School of Mechanics and Construction Engineering Jinan University Guangzhou510632 China

In this paper, the thermal analysis and structural analysis of MLCC are carried out by using the commercial finite element software ANSYS. By comparing the thermal-mechanical analysis results of the structural optimization models of different schemes, the optimal optimization scheme is found. The model calculated the time required for MLCC to reach temperature stability considering thermal convection and heat conduction, and obtained the thermal deformation and thermal stress distribution of MLCC element. Based on the analysis results of MLCC original model, the thermal analysis under different wave soldering temperatures was carried out. Based on the simulated transient results, the structure and materials of MLCC key components were optimized. The results provide a basis for the optimal design of MLCC. © 2020 Institute of physics Publishing. All rights reserved.

关键词： Thermoanalysis

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Ultimate strength analysis of three-way pipe considering plastic reinforcement effect

Ultimate strength analysis of three-way pipe considering pla...

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2020 International Conference on Applied physics and Computing, ICAPC 2020

作者： Su, Wei Luo, Wenhao Dong, Xianshan Liu, Renhuai MOE Key lab of Disaster Forecast and Control in Engineering Guangzhou 510632 China Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory China Electronic Product Reliability Environmental Testing Research Institute Guangzhou510610 China School of Mechanics and Construction Engineering Jinan University Guangzhou510632 China

Considering the plastic reinforcement effect in materials, the plastic limit load of the three-way structure is analyzed. ANSYS commercial finite element software is used for numerical simulation. According to the results, the paper discusses the influence of the plastic reinforcement effect on the pipe's plastic ultimate load and failure mode. And the structure is further analyzed to verify the theory and design ideas in actual engineering. For improving the design and safety assessment of the three-way structure, the results provide a theoretical basis and a numerical reference, and the finite element method is economical than the experimental method. At last, it satisfies the accuracy requirements of engineering. © 2020 Institute of physics Publishing. All rights reserved.

关键词： Finite element method

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A Method for Simultaneously Monitoring Gate Leakage Current and Threshold Voltage of SiC Power MOSFETs Under Repetitive Short-Circuit Stress

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IEEE Transactions on Transportation Electrification 2025年

作者： Chen, Y.Q. Li, W.F. Li, Z.J. Hou, B. Wu, Z.H. Li, B. Science and Technology on Reliability Physics and Application of Electronic Component Laboratory The No. 5 Electronics Research Institute of the Ministry of Industry and Information Technology Guangdong Guangzhou510370 China South China University of Technology Guangdong Guangzhou510610 China

In this work, the variations of gate-source leakage current (Igss) and threshold voltage (VTH) are converted into the changing rate of drain current (id), which is selected as a new aging indicator. Therefore, a method for monitoring the gate-source leakage current and the threshold voltage through a current sensor is proposed. The health monitoring method is simple, low-cost, and does not require additional circuits. The corresponding modeling is carried out for the Silicon carbide (SiC) power MOSFETs in power conversion systems (PCS). In addition, repetitive Short-Circuit (SC) stress is used to accelerate the degradation of SiC power MOSFETs. According to the experimental results, the threshold voltage increases significantly and the on-state resistance (Rdson) increases slightly. At the same time, the gate-source leakage current of the SiC power MOSFETs increases greatly with the increase of SC cycles. Furthermore, the health condition monitoring has been simulated and experimentally verified in the Boost converter, the simulation and experimental results show that the changing rate of drain current of the devices in the Boost converter could be used to monitor the threshold voltage and the deterioration of the gate-source leakage current. The work may be useful for degradation monitoring of the SiC power MOSFETs in PCS. © 2015 IEEE.

关键词： Threshold voltage

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Ultimate strength analysis of local thinning tee pipe considering plastic strengthening effect

Ultimate strength analysis of local thinning tee pipe consid...

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2020 International Conference on Applied physics and Computing, ICAPC 2020

In this paper, the locally thinned three-way structure under internal pressure is analyzed based on the theory of plastic strengthening effect and limit analysis. A finite element model is presented through ANSYS commercial software to simulate the mechanical properties of orthogonal and oblique three-way structures. This paper systematically analyses how the shape and size of the thinning effect the plastic limit load of the pipe and what is the typical failure mode of plastic failure. Some valuable conclusions are drawn, which provide a useful reference for the design and production of the tee pipe. © 2020 Institute of physics Publishing. All rights reserved.

关键词： Finite element method

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Performance-based reliability Prediction of Power Supply Considering Degradation Uncertainties

Performance-based Reliability Prediction of Power Supply Con...

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System reliability and Safety Engineering (SRSE), International Conference on

作者： Hao Niu Shaohua Yang Wenyuan Liao Canxiong Lai Wen Sun Science and Technology on Reliability Physics and Application of Electronic Component Laboratory No.5 Electronics Research Institute of Ministry of Industry and Information Technology (MIIT) Guangzhou China Key Laboratory of Infrared Imaging Materials and Detectors Shanghai Institute of Technical Physics Shanghai China

ISBN: (纸本)9781665401616

reliability prediction is an effective approach to find weak links and evaluate whether the product satisfies its reliability requirement during the design phase. For the highly reliable product, it is far difficult to predict its reliability level according to the traditional method that largely relies on historical data from reliability handbooks. This paper proposes a performance-based reliability prediction method, which makes use of degradation to reflect product's health conditions. Additionally, a degradation model considering multivariate uncertainties such as operation conditions and parameter randomness is proposed to describe soft failures induced by degradation. A case study of power supply is illustrated to show the effectiveness and feasibility of the proposed method and degradation model for reliability prediction.

关键词： Degradation Uncertainty Power supplies Sensitivity analysis Predictive models Maintenance engineering reliability engineering

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Analytical and Measurement-Based Method for Diagnosing the Fault of Channels in TSV-Based 3D ICs

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Journal of physics: Conference Series 2022年第1期2242卷

作者： Chenbing Qu Linting Zheng Liwei Wang Chen Sun Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou 511370 China

Three-dimensional integrated circuits (3D ICs) based on through silicon via (TSV) technology can effectively solve many bottlenecks in the development of ICs. It has rapidly developed into a key cutting-edge technology representing the medium and long-term sustainable development of microelectronics industry. Process fluctuation causes TSV process defects, resulting in the change of structural parameters of RDL and TSV interconnection structure. Finally, it leads to the degradation of performance parameters and functional failure of 3D interconnection and devices. Aiming at the high-resistance and open-circuited faults of 3D ICs, this paper develops an analysis method based on micro nano machining and detection technology. The electrical characteristics and images of typical chain TSV interconnections are analyzed by scanning electron microscope high-resolution imaging. The mechanism of fault diagnosis is based on potential difference and electron transfer.

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Influence of the acceptor-type trap on the characteristic of the short-channel GaN MOS-HEMT

Influence of the acceptor-type trap on the characteristic of...

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International Conference on Solid-State and Integrated Circuit technology

作者： Yijun Shi Zhiwei Fu Bin Yao Si Chen Yiqiang Chen Bin Zhou Yun Huang Zhizhe Wang The Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China

ISBN: (数字)9781728162355

ISBN: (纸本)9781728162362

In this work, the influences of the acceptor-type trap (located at GaN/insulator interface and GaN buffer layer) on the threshold voltage and 2-dimension electron gas (2DEG) density are analyzed for short-channel GaN MOS-HEMT. Particularly, the influence of the acceptor-type trap on short-channel effect in short-channel GaN MOS-HEMT is analyzed and modeled for the first time. The analyzed results have shown that the acceptor-type trap plays an important role on the threshold voltage, 2DEG density, and short-channel effect. The calculated results are well supported by the numerical simulation and experimental measurement, which verified the correctness and accuracy of the presented model to predict the dependence of threshold voltage, 2DEG density, and short-channel effect on acceptor-type trap.

关键词： Gallium nitride Threshold voltage MODFETs HEMTs Electron traps Logic gates Aluminum oxide

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Research on package reliability of the fiber optic hydrophone based on SEM

Research on package reliability of the fiber optic hydrophon...

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International Conference on (ICEPT) electronic Packaging technology

作者： Shuwang Li Guoguang Lu Canxiong Lai Shaohua Yang Yun Huang Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China

ISBN: (数字)9781728168265

ISBN: (纸本)9781728168272

As underwater acoustic sensor, the fiber optic hydrophone needs to be used in harsh marine environment for decades. A reliable packaging structure of the fiber optic hydrophone is critical. On one hand, the package structure needs to have a good sound transmission performance to achieve high-precision underwater acoustic detection. On the other hand, it also needs to ensure enough strength to resist hydrostatic pressure and insulate sea water. Therefore, the combination designed of polyurethane packaging and metal matrix is adopted, and the interface was bonded by adhesive. Obviously, the bonded strength of interface is one determined packaging reliability factor, and the proper thickness of adhesive is the guarantee of bonded strength. In other words, if the thickness is not properly controlled, the bonded strength will not enough, and the packaging interface will become the weak links. So, effective measurement and characterization method is the basis of thickness control. In this paper, a research on package reliability of fiber optic hydrophone based on scanning electron microscope (SEM) has been present. In details, two sample preparation methods of breezing method and grinding method were introduced, further the thickness of the adhesive was measured by SEM. The results show that both of two methods can measure the thickness with submicron accuracy, and the comparison test of the same sample shows that two methods have good consistency, and the result is about 12 microns which is a lower than the required adhesive thickness of 25 microns, this will result in the adhesive strength cannot meet the reliable requirements, and became a weak links of reliability. Further analysis also show that, methods proposed in this paper can accurately measure the thickness of adhesive in submicron scale and effectively find the key process defects. This method will help to improve the packaging reliability of the fiber optic hydrophone.

关键词： reliability Optical fibers Sonar equipment Micrometers Thickness measurement Packaging Scanning electron microscopy

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Prediction of electromigration lifetime of copper pillar bumps in ceramic packaging device

Prediction of electromigration lifetime of copper pillar bum...

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International Conference on (ICEPT) electronic Packaging technology

作者： Fangzhou Chen Si Chen Zhiwei Fu Yun Huang Fei Qin Tong An Beijing University of Technology Beijing China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China

ISBN: (数字)9781728168265

ISBN: (纸本)9781728168272

In this study, a model for predicting the electromigration lifetime of copper pillar bumps in ceramic packaging device was established. In order to determine the relevant parameters in the Black model of electromigration lifetime prediction, three current density levels, 2.5×10 4 A/cm 2 , 3×10 4 A/cm 2 and 3.5×10 4 A/cm 2 , were selected to conduct the electromigration tests on the Cu pillar bump in ceramic package samples at ambient temperatures of 125°C and 160°C respectively. SEM was used to observe the failure mode of bumps under different temperature and current density. The experiment of on-line monitoring of the bump resistance was used to monitor the resistance information in real time, and then obtain the electromigration lifetime of the copper pillar bumps under each load condition. By determining the current influence index n and the failure activation energy Q, this paper defines the black model of the electromigration lifetime prediction of the copper pillar bumps in the ceramic package.

关键词： Copper Electromigration Resistance Current density Ceramics Couplings Monitoring

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Simulation Analysis of Mechanical Response of Wire Bonding in SiP under Thermal-mechanical-electrical Coupling Load

Simulation Analysis of Mechanical Response of Wire Bonding i...

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IEEE International Conference on Integrated Circuits, Technologies and applications (ICTA)

作者： Fangzhou Chen Si Chen Bin Zhou Yun Huang Fei Qin Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China Beijing University of Technology Beijing China

ISBN: (数字)9781728180328

ISBN: (纸本)9781728180335

The heat dissipation of chips rise the risk for reliability of the system in package (SiP). Sequential coupling FEM simulation method was adopted to evaluate the reliability of SiP. The sub-model technology was used to analyze the thermo-mechanical response of gold wire leads in the whole SiP device. Based on the simulation, the stress and temperature distribution of the lead wires are obtained. The maximum value is compared with the ultimate strength to evaluate the reliability of the product under working conditions.

关键词： Heating systems Wires Lead reliability Integrated circuit modeling Stress Load modeling

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