检索结果-内蒙古大学图书馆

European Conference on Radiation and its Effects on components and Systems (RADECS)

作者： Chao Peng Zhifeng Lei Zhangang Zhang Yujuan He Yun Huang Yunfei En Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China

A radiation hardening process of shallow trench isolation oxide is proposed for 130 nm PDSOI technology. The TID effect and high temperature annealing effect after irradiation are investigated for the PDSOI nMOSFET.

ISBN: (数字)9781665412353

ISBN: (纸本)9781665429597

关键词： Performance evaluation MOSFET Annealing Radiation hardening (electronics) Silicon-on-insulator Silicon nitride MOSFET circuits

来源：评论

学校读者我要写书评

暂无评论

Manganese-Based Lithium-Ion Battery: Mn_(3)O_(4) Anode Versus LiNi_(0.5)Mn_(1.5)O_(4) Cathode

引用

Automotive Innovation 2020年第2期3卷 123-132页

作者： Wenfeng Mao Wei Yue Feng Pei Xiaochen Zhao Xiangdong Huang Guo Ai Tianjin Key Laboratory of Structure and Performance for Functional Molecules MOE Key Laboratory of Inorganic-Organic Hybrid Functional Material ChemistryCollege of ChemistryTianjin Normal UniversityTianjin 300387China Guangzhou Automobile Group Co. Ltd.Guangzhou 511434China School of Materials Science and Engineering South China University of TechnologyGuangzhou 510641China College of Physics and Materials Science Tianjin Normal UniversityTianjin 300387China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory No.5 Electronic Research Institute of the Ministry of Industry and Information TechnologyGuangzhou 510610China

Lithium-ion batteries(LIBs)are widely used in portable consumer electronics,clean energy storage,and electric vehicle ***,challenges exist for LIBs,including high costs,safety issues,limited Li resources,and manufacturingrelated *** this paper,a novel manganese-based lithium-ion battery with a LiNi_(0.5)Mn_(1.5)O_(4) ‖ Mn_(3)O_(4) structure is reported that is mainly composed of environmental friendly manganese compounds,where Mn_(3)O_(4) and LiNi_(0.5)Mn_(1.5)O_(4) (LNMO)are adopted as the anode and cathode materials,*** proposed structure improves battery safety and reduce costs compared with current battery technology,provides comparable energy density with that of traditional graphite-based ***,the characteristics and the electrochemical performances of the Mn_(3)O_(4) anode and the LNMO cathode are investigated separately against Li metal in half cell configurations,with promising performances being demonstrated by both ***,a full cell structure with Mn_(3)O_(4) against LNMO is constructed that provides an average discharge voltage of 3.5 V and an initial specific capacity of 86.2 mA;h;g−*** importantly,the electrochemical performance of the LNMO‖ Mn_(3)O_(4) full cell and its possible decay mechanisms are discussed systemically;and efficient strategies are proposed to further improve both the electrochemical performance of Mn_(3)O_(4) and the stability of LNMO.

关键词： Mn_(3)O_(4) LiNi_(0.5)Mn_(1.5)O_(4) Chemical synthesis Composite Energy storage

来源：评论

学校读者我要写书评

暂无评论

Heavy-ion and pulsed-laser single event effects in 130-nm CMOS-based thin/thick gate oxide anti-fuse PROMs

引用

Nuclear science and Techniques 2019年第5期30卷 92-102页

作者： Chang Cai Tian-Qi Liu Xiao-Yuan Li Jie Liu Zhan-Gang Zhang Chao Geng Pei-Xiong Zhao Dong-Qing Li Bing Ye Qing-Gang Ji Li-Hua Mo Institute of Modern Physics Chinese Academy of Sciences University of Chinese Academy of Sciences School of Physical Science and Technology Lanzhou University Academy of Shenzhen State Microelectronic Co. Ltd. Science and Technology on Reliability Physics and Application of Electronic Component Laboratory

Single event effects of 1-T structure programmable read-only memory(PROM) devices fabricated with a 130-nm complementary metal oxide semiconductorbased thin/thick gate oxide anti-fuse process were investigated using heavy ions and a picosecond pulsed laser. The cross sections of a single event upset(SEU) for radiationhardened PROMs were measured using a linear energy transfer(LET) ranging from 9.2 to 95.6 MeV cm^2mg^(-1).The result indicated that the LET threshold for a dynamic bit upset was ～ 9 MeV cm^2mg^(-1), which was lower than the threshold of ～ 20 MeV cm^2mg^(-1) for an address counter upset owing to the additional triple modular redundancy structure present in the latch. In addition, a slight hard error was observed in the anti-fuse structure when employing209 Bi ions with extremely high LET values(～ 91.6 MeV cm^2mg^(-1)) and large ion fluence(～ 1×10~8 ions cm^(-2)). To identify the detailed sensitive position of a SEU in PROMs, a pulsed laser with a 5-μm beam spot was used to scan the entire surface of the *** revealed that the upset occurred in the peripheral circuits of the internal power source and I/O pairs rather than in the internal latches and buffers. This was subsequently confirmed by a ^(181)Ta experiment. Based on the experimental data and a rectangular parallelepiped model of the sensitive volume, the space error rates for the used PROMs were calculated using the CRèME-96 prediction tool. The results showed that this type of PROM was suitable for specific space applications, even in the geosynchronous orbit.

关键词： Anti-fuse PROM Single event effects Heavy ions Pulsed laser Space error rate

来源：评论

学校读者我要写书评

暂无评论

Investigating Neutron-Induced Single Event Transient Characteristics by TCAD Simulations in 65 nm technology and below 3

Investigating Neutron-Induced Single Event Transient Charact...

引用

3rd International Conference on Radiation Effects of electronic Devices, ICREED 2019

作者： Peng, Chao Lei, Zhifeng Zhang, Zhangang En, Yunfei Huang, Yun China Electronic Product Reliability and Environmental Testing Research Institute Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou510610 China

ISBN: (纸本)9781728173184

The neutron-induced secondary ions can cause single event effects through direct ionization, while the LET values of the secondary ions are quite lower than heavy ions in space. Monte Carlo simulation results show that although the maximum LET of secondary ions produced by different energy neutrons incident into the circuit can reach 25.6 MeV-cm2/mg, 98% of the secondary ions have LET values below 16 MeV-cm2/mg. This may lead to different charge collection mechanisms and single event transient (SET) characteristics for neutron. In this paper, the charge collection mechanisms of neutron secondary ions in a single 65 nm planar bulk transistor are studied through 3D TCAD simulations. The neutron-induced SET characteristics in planar bulk transistor, UTBB FDSOI and bulk/SOI FinFET are also compared. Based on the simulation results, UTBB FDSOI shows the best single event effect immunity compared with planar bulk transistor, bulk FinFET and SOI FinFET under the same technology node. © 2019 IEEE.

关键词： Neutrons

来源：评论

学校读者我要写书评

暂无评论

Performance Enhancement Mechanisms and Optimization of Multi-Pass Parallel Flow Condensers with Liquid-Vapor Separation

SSRN

引用

SSRN 2024年

作者： Pu, Jin Huan Hua, Nan Jian, Xiaodong Chen, Ying Li, Yongliang Yang, Tong Wang, Hua Sheng Shandong Institute for Advanced Technology Shandong University Shandong Jinan250061 China Ningbo Institute of Technology Beihang University Zhejiang Ningbo315832 China School of Engineering and Materials Science Queen Mary University of London LondonE1 4NS United Kingdom The Science and Technology on Reliability Physics Application of Electronic Component Laboratory The 5th Electronics Research Institute The Ministry of Industry and Information Technology Guangdong Guangzhou510610 China School of Material and Energy Guangdong University of Technology Guangdong Guangzhou510006 China School of Chemical Engineering University of Birmingham BirminghamB15 2TT United Kingdom Faculty of Science and Technology Middlesex University LondonNW4 4BT United Kingdom

This study employed a distributed-parameter model developed by the authors to investigate the mechanisms of condensation heat transfer enhancement using liquid-vapor separation (LS) in multi-pass parallel flow condensers (MPFCs). Additionally, tube pass arrangements for MPFCs with LS were optimized. Simulations characterized relationships among refrigerant flow rate, vapor quality, flow patterns, heat-transfer coefficient and pressure drop at tube level, along with heat-transfer coefficient and tube-wall temperature distributions at the segment level. An entropy analysis based on the second law of thermodynamics quantified contributions from heat transfer and pressure drop. The results demonstrate that introducing LS leads to (1) a 9.1% increase in the average heat-transfer coefficient, (2) a 50.4% reduction in pressure drop, (3) similar entropy generation numbers due to heat transfer for both MPFC and MPFC-LS, (4) significantly higher entropy generation numbers due to pressure drop in the last two tube passes, and (5) a 51.4% lower average entropy generation number for MPFC-LS compared to MPFC. Compared to a baseline serpentine condenser, MPFCs-LS reduced pressure drop by 84% to 98% while maintaining nearly the same heat transfer rate, resulting in an overall performance improvement of 5% to 9%. The optimal tube-pass arrangement for MPFCs-LS was identified as 3-3-2-2-2-2-2-1-1-1-1. © 2024, The Authors. All rights reserved.

关键词： Parallel flow

来源：评论

学校读者我要写书评

暂无评论

Threshold Voltage Instability Mechanisms of SiC Power MOSFETs under Different Gate Preconditon Durations

Threshold Voltage Instability Mechanisms of SiC Power MOSFET...

引用

7th International Forum on Wide Bandgap Semiconductors&18th China International Forum on Solid State Lighting (第七届国际第三代半导体论坛暨第十八届中国国际半导体照明论坛)

作者： Yunliang Rao Yuan Chen Zhiyuan He Yiqiang Chen Xinbing Xu Yang Liu School of Electronics and Information Technology Sun Yat-sen University510006GuangzhouChina Scien Science and Technology on Reliability Physics and Application of Electronic Component Laboratory No. School of Electronics and Information Technology Sun Yat-sen University510006GuangzhouChina

在这项工作中，研究了不同栅极预偏置条件持续时间下SiC功率 MOSFETs的阈值电压不稳定性及其机理.这项工作中使用的SiC功率MOSFETs来自三个供应商，即某国产半导体公司、罗姆半导体和英飞凌，他们的产品分别地代表了具有平面栅极、双沟...

在这项工作中，研究了不同栅极预偏置条件持续时间下SiC功率 MOSFETs的阈值电压不稳定性及其机理.这项工作中使用的SiC功率MOSFETs来自三个供应商，即某国产半导体公司、罗姆半导体和英飞凌，他们的产品分别地代表了具有平面栅极、双沟槽栅极和非对称沟槽栅极的最先进的MOSFETs.

关键词：

来源：评论

学校读者我要写书评

暂无评论

Cryogenic Characterization of Nano-scale Bulk FinFETs 15

Cryogenic Characterization of Nano-scale Bulk FinFETs

引用

15th IEEE International Conference on Solid-State and Integrated Circuit technology, ICSICT 2020

作者： Fan, Lin-Jie Bi, Jin-Shun Fan, Xue Xu, Gao-Bo Xu, Yan-Nan Xi, Kai Zhang, Zhan-Gang Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China School of Electrical Engineering Chengdu Technological University Chengdu611730 China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou510610 China

ISBN: (纸本)9781728162355

For the state-of-Art quantum technology applications, the effective control and high-speed reading of a large number of qubits require a combination of complementary metal-oxide-semiconductor (CMOS) circuits in cryogenic temperatures environments. In this letter, the electrical responses of bulk fin field effect transistor (FinFET) devices that could be applied in quantum controllers have been investigated under cryogenic conditions. The devices under test are high-k metal gate bulk FinFETs with 35 nm channel length. The electrical properties of the FinFET device are greatly optimized at cryogenic temperatures. As the temperature decreases, the FinFET exhibits a larger saturation current, smaller subthreshold swing, larger maximum transconductance, and smaller gate-induced drain leakage current. These results provide experimental evidence for the implementation of the FinFET in control systems for quantum chips in cryogenic environments. © 2020 IEEE.

关键词： Cryogenics

来源：评论

学校读者我要写书评

暂无评论

An R-SIFT Image Matching Intelligent Algorithm Applied to Hardware Trojan Detection

An R-SIFT Image Matching Intelligent Algorithm Applied to Ha...

引用

作者： Chen Sun Pujiang Liang Lingling Li Jingjing Ma Licheng Jiao Fang Liu Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Key Laboratory of Intelligent Perception and Image Understanding of Ministry of Education International Research Center for Intelligent Perception and ComputationJoint International Research Laboratory of Intelligent Perception and ComputationSchool of Artificial IntelligenceXidian University

Malicious modification, deletion or addition of some modules in the integrated circuits(ICs) will cause the chip to be attacked, which is called Hardware Trojans(HTs). Reverse engineering(RE) is a classic destructive method and widely used in HTs detection. However, RE is very time-consuming and error prone. In this paper, based on RE, we propose the R-SIFT algorithm to match image and reformulate the Trojan detection problem as change detection problem. For the R-SIFT algorithm, the ratio of exponentially weighted averages(Roewa) operator is introduced into the scale-invariant feature transform(SIFT) algorithm. Experiments show that the proposed method has 7 to 56 times more matching points than the original SIFT can be effectively applied to HTs detection.

关键词： Trojan detection R-SIFT Image matching

来源：评论

学校读者我要写书评

暂无评论

Degradation Studies on 8-Layer 3D Vertical Resistive Random Access Memory Under Moisture

Degradation Studies on 8-Layer 3D Vertical Resistive Random ...

引用

International Symposium on Physical & Failure Analysis of Integrated Circuits

作者： Dengyun Lei Huiwei Wu Yiqiang Chen Yun Huang Yunfei En Qiantong Guo Feng Zhang Rui Gao Science and Technology on Reliability Physics and Application of Electronic Component Laboratory The No.5 Electronics Research Institute of the Ministry of Industry and Information Technology Guangzhou China China Electronics Corporation Beijing China Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China

Resistive random-access memory (RRAM) is a promising alternative to Flash memory. For high density application, 3D vertical RRAM (VRRAM) is a cost-effective method that attracts many attentions. However, the VRRAM also has some reliability issues. In this paper, the degradation under moisture stress is studied. High resistant state(HRS) is sensitive to moisture, while the low resistant state(LRS) remains stable. So, the moisture stress decreases the memory window. This degradation is caused by the moisture invasion HfO2/TaOx interface along the side wall and reduce the barrier of the interface. Based on Poole-Frenkel emission, this paper models the degradation mechanism to illustrate the process.

关键词： Degradation Resistance Integrated circuits Three-dimensional displays Resistive RAM Moisture Hafnium compounds

来源：评论

学校读者我要写书评

暂无评论

A reliability evaluation software for Flip Chip based on failure physics

A reliability evaluation software for Flip Chip based on fai...

引用

International Conference on (ICEPT) electronic Packaging technology

作者： Si Chen Qiushi Wu Zhiwei Fu Yun Huang Bin Yao Bin Zhou Physics and Application of Electronic Component Laboratory Science and Technology on Reliability Guangzhou China School of Electronic and Information Engineering South China University of Technology Guangzhou China

ISBN: (数字)9781728168265

ISBN: (纸本)9781728168272

This paper introduces the flip chip reliability evaluation software developed based on failure physics. Firstly, the system framework of the software is introduced, and then the core algorithm of the software is described. Key parameters such as stress, strain, plastic strain energy density, displacement, acceleration can be extracted, and the service life of the selected structure is obtained through relevant failure physical models. The lifetime of each key structure is used to obtain the lifetime of the whole flip chip device through the competition algorithm of short board effect. An example of Flip chip device reliability evaluation under condition of standard GJB548B-2005 method 1010.1 C temperature cycling was given, it shows that the predicted device life is 207 cycles.

关键词： Load modeling Software Analytical models Software reliability Flip-chip devices Finite element analysis

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：