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Mechanisms of atmospheric neutron-induced single event upsets in nanometric SOI and bulk SRAM devices based on experiment-verified simulation tool

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Chinese physics B 2018年第6期27卷 336-340页

作者： Zhi-Feng Lei Zhan-Gang Zhang Yun-Fei En Yun Huang Key Laboratory of Low Dimensional Materials ＆ Application Technology of Ministry of Education Xiangtan University Xiangtan 411100 China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou 510610 China

In this paper, a simulation tool named the neutron-induced single event effect predictive platform（NSEEP^2） is proposed to reveal the mechanism of atmospheric neutron-induced single event effect（SEE） in an electronic device, based on heavy-ion data and Monte-Carlo neutron transport simulation. The detailed metallization architecture and sensitive volume topology of a nanometric static random access memory（SRAM） device can be considered to calculate the real-time soft error rate（RTSER） in the applied environment accurately. The validity of this tool is verified by real-time experimental results. In addition, based on the NSEEP^2, RTSERs of 90 nm–32 nm silicon on insulator（SOI） and bulk SRAM device under various ambient conditions are predicted and analyzed to evaluate the neutron SEE sensitivity and reveal the underlying mechanism. It is found that as the feature size shrinks, the change trends of neutron SEE sensitivity of bulk and SOI technologies are opposite, which can be attributed to the different MBU performances. The RTSER of bulk technology is always 2.8–64 times higher than that of SOI technology, depending on the technology node, solar activity, and flight height.

关键词： atmospheric neutron single event effects soft error rate Monte-Carlo simulation

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An Online Monitoring Scheme of Output Capacitor’s ESR for DCM Buck

An Online Monitoring Scheme of Output Capacitor’s ESR for D...

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Prognostics and System Health Management Conference (PHM-Qingdao)

作者： Xiaoxing Duan Jian Zou Dengyun Lei Bo Hou Liwei Wang Yun Huang Science and Technology on Reliability Physics and Application of Electronic Component Laboratory CEPREI Guangzhou China

Electrolytic capacitor is widely selected as output capacitor in DC-DC converter, while it has limited reliability. Monitoring the equivalent series resistance (ESR) is an effective method to diagnostic the output capacitor. In this paper, an online monitoring scheme of ESR is present for discontinuous conduction mode (DCM) Buck converters. Based on the output ripple voltage, the model of ESR is established. By sampling the output ripple voltage, the ESR is calculated using the sampled values. The proposed method reduces the current measurement and avoids the change of converter topology. The simulation and experimental results verify the effectiveness of the method.

关键词： 5G mobile communication

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Cryogenic Characterization of Nano-scale Bulk FinFETs

Cryogenic Characterization of Nano-scale Bulk FinFETs

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International Conference on Solid-State and Integrated Circuit technology

作者： Lin-Jie Fan Jin-Shun Bi Xue Fan Gao-Bo Xu Yan-Nan Xu Kai Xi Zhan-Gang Zhang University of Chinese Academy of Sciences Beijing School of Electrical Engineering Chengdu Technological University Chengdu Institute of Microelectronics Chinese Academy of Sciences Beijing Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou

ISBN: (数字)9781728162355

ISBN: (纸本)9781728162362

For the state-of-art quantum technology applications, the effective control and high-speed reading of a large number of qubits require a combination of complementary metal-oxide-semiconductor (CMOS) circuits in cryogenic temperatures environments. In this letter, the electrical responses of bulk fin field effect transistor (FinFET) devices that could be applied in quantum controllers have been investigated under cryogenic conditions. The devices under test are high-k metal gate bulk FinFETs with 35 nm channel length. The electrical properties of the FinFET device are greatly optimized at cryogenic temperatures. As the temperature decreases, the FinFET exhibits a larger saturation current, smaller subthreshold swing, larger maximum transconductance, and smaller gate-induced drain leakage current. These results provide experimental evidence for the implementation of the FinFET in control systems for quantum chips in cryogenic environments.

关键词： FinFETs Cryogenics Logic gates Temperature Silicon Voltage measurement Tunneling

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Analysis of Atmospheric Neutron Radiation Effects in Automotive electronics Systems

Analysis of Atmospheric Neutron Radiation Effects in Automot...

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International Symposium on Physical & Failure Analysis of Integrated Circuits

作者： Yujuan He Zhifeng Lei Zhangang Zhang Chao Peng Jianke Li Enxia Zhang Yintang Yang Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou city R.P.China Vanderbilt University Nashville TN USA Microelectronics Institute Xidian University Xi'an city R.P.China

ISBN: (数字)9781728161693

ISBN: (纸本)9781728161709

The Single Event Functional Interruption (SEFI) effect of the atmospheric neutron radiation in microprocessor parts of automotive electronic systems is analyzed in this study. The white neutron source of CSNS (China Spallation Neutron Source) is used for three automotive electronic Systems to neutron radiation test in the microprocessors in the systems. It shows that the neutron fluence threshold of SEFI varies greatly with the feature size of the device. The 40 nm process device with large feature size do not failure at 5xl0 9 n/cm 2 neutron fluence, but SEFI phenomenon occurs in both devices of 28nm process. The SEFI section and soft error rate of the 28nm process MPU microprocessors are calculated, and the soft error rate is above 10 3 FIT, far exceeding the soft failure rate requirements of automotive electronic systems. It can be seen that large-scale advanced process integrated circuits in automotive electronic systems are susceptible to atmospheric neutron radiation effects, and it will affect automotive safety issues.

关键词： Neutrons Automotive electronics Silicon-on-insulator Error analysis Random access memory reliability Mesons

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Enhancing dipole polarization loss in conjugated metal-organic frameworks via coordination symmetry breaking under electromagnetic field

Advanced Powder Materials

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Advanced Powder Materials 2025年第4期4卷

作者： Wang, Weize Liu, Rong Tao, Jiaqi Yu, Tinglei Liu, Yijie Duan, Lvtong Zhang, Zifu He, Zhihao Chen, Shuang Zhou, Jintang Chen, Ping Liu, Peijiang Yao, Zhengjun College of Materials Science and Technology Nanjing University of Aeronautics and Astronautics Nanjing211100 China Ministry of Industry and Information Technology Nanjing211100 China Kuang Yaming Honors School Nanjing University Nanjing210023 China College of chemistry and chemical engineering Lanzhou University Lanzhou730000 China School of Electronic Science and Engineering Nanjing University Nanjing210023 China Reliability Physics and Application Technology of Electronic Component Key Laboratory the fifth Electronics Research Institute of the Ministry of Industry and Information Technology Guangzhou510610 China Department of Materials Science and Engineering National University of Singapore 117575 Singapore

Modulating the dipole polarization loss in the single-atom region and establishing its direct relationship with the electromagnetic wave absorption (EWA) performance remain an unmet challenge. Here, a dual-ligand modulation strategy, i.e., partially changing coordination atoms in the single-metal region (sMr), is introduced to effectively break the coordination symmetry of conjugated metal-organic frameworks (cMOFs), finally enhancing EWA property of cMOFs materials. Further, the asymmetrical sMr is experimentally found to elicit the dipole polarization loss, overcoming the handicaps of other electromagnetic wave loss mechanisms, which directly contribution to enhance EWA performance of this series of cMOFs. This strategy is further confirmed by replacing metal centers. Among studied series of cMOFs, Cu2.25/Co0.75(HHTP1.67HITP0.33) achieves excellent EWA performance with an effective absorption bandwidth of 5.00 GHz and a reflection loss of −66.03 dB. We introduce a dual-ligand modulation strategy targeting single-metal regions within cMOFs here, aiming to achieve superior EWA performance through atomic-scale dipole polarization loss modulation. We hope our study can inspire more exploration to realize high-performance EWA materials. © 2025 Central South University.

关键词： Evanescent fields

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Influence of Packaging Forms and Interconnection Structures on Thermal Fatigue reliability of Large-Scale Packaging

Influence of Packaging Forms and Interconnection Structures ...

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International Conference on (ICEPT) electronic Packaging technology

作者： Rourou Jia Bin Zhou Si Chen Tong An Fei Qin Beijing University of Technology Beijing China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China

ISBN: (数字)9781728150642

ISBN: (纸本)9781728150659

At present, with the development of the electronic packaging industry, the size of the packaging is getting larger and larger, and the density of the interconnection is getting higher and higher, which brings great challenges to the reliability of the packaged device. Both the packaging forms and the interconnection structures have a great influence on the reliability of the electronic packaging. Column grid array and ball grid array are the two most widely used forms of array interconnects, and the ceramic packaging and plastic packaging are the most widely used forms of packaging. Therefore, in view of different packaging forms and different interconnection structures, three different devices, namely, CCGA (Ceramic Column Grid Array), CBGA (Ceramic Ball Grid Array) and PBGA (Ceramic Ball Grid Array), are used for temperature cycling. Through comparative analysis, the effects of packaging forms and interconnection structures on the reliability of large-scale packaging in low-temperature thermal fatigue environment were studied, and life prediction was carried out. According to the analysis, under the same temperature cycling condition, the form of plastic packaging is better than that of ceramic packaging, and the thermal fatigue resistance of the solder column interconnection structure is stronger than that of the solder ball interconnection structure.

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Decapsulation Method for 3D Stacked-die Packaged Devices

Decapsulation Method for 3D Stacked-die Packaged Devices

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International Symposium on Physical & Failure Analysis of Integrated Circuits

作者： Xiaoling Lin Chaohui Liang Science and Technology Laboratory on Reliability Physics and Application of Electronic Component The fifth institute of MIIT P.R. China Guangzhou China Reliability Analysis Center The fifth institute of MIIT P.R. China Guangzhou China Reliability Analysis Center The fifth institute of MIIT P.R.China Guangzhou China

ISBN: (数字)9781728161693

ISBN: (纸本)9781728161709

3-dimensional (3D) stacked-die package is one of the important package styles for MEMS inertial devices. Its unique packaging brings new challenges for its decapsulation method. In this paper, a new decapsulation method for 3D stacked-die packaged MEMS inertial devices is introduced with method's steps, technical flow and application. This decapsulation method is the combination of laser-decap and multi-steps chemical etching. It reveals the stacked-dies layer by layer and makes the possibility to analyze the structures in the MEMS inertial devices, such as accelerometer, gyroscope, ASIC, etc. It provides good technical support for inner-inspection of 3D stacked-die packaged MEMS inertial devices.

关键词： Micromechanical devices Plastics Etching Accelerometers Chemicals Gyroscopes Morphology

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Effect of random vibration load on flat cover and T-shaped cover in CCGA package

Effect of random vibration load on flat cover and T-shaped c...

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International Conference on (ICEPT) electronic Packaging technology

作者： Zezheng Li Bin Zhou Si Chen Tong An Fei Qin Beijing University of Technology Beijing China Science and technology on reliability physics and application of electronic component laboratory Guangzhou China

ISBN: (数字)9781728150642

ISBN: (纸本)9781728150659

This paper uses the finite element method to establish a three-dimensional finite element model of a ceramic column grid array (CCGA) package flat cover and T-cover structure. The stress distribution of CCGA package sealing cover under three random vibration loads (acceleration root mean square values of 53.5 m/s 2, 92.6 m/s 2 , 119.5 m/s 2 ) is analyzed, and the flat cover and T-shaped cover are respectively determined. The dangerous position of the plate structure, the initial position of the crack and the crack propagation. The results show that the flat cover plate is prone to cracks at the four corners of the interface between sealing cover and solder, and the T-shaped cover plate is liable to cracks in the middle of the edge of the interface between sealing cover and solder.

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Degradation of current–voltage and low frequency noise characteristics under negative bias illumination stress in InZnO thin film transistors

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Chinese physics B 2018年第6期27卷 524-530页

作者： Li Wang Yuan Liu Kui-Wei Geng Ya-Yi Chen Yun-Fei En School of Electronic and Information Engineering South China University of TechnologyGuangzhou 510640China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory CEPREIGuangzhou 510610China Key Laboratory of Silicon Device Technology Chinese Academy of SciencesBeijing 100029China

The instabilities of indium–zinc oxide thin film transistors under bias and/or illumination stress are studied in this paper. Firstly, illumination experiments are performed, which indicates the variations of current–voltage characteristics and electrical parameters（such as threshold voltage and sub-threshold swing） are dominated by the stress-induced ionized oxygen vacancies and acceptor-like states. The dependence of degradation on light wavelength is also investigated. More negative shift of threshold voltage and greater sub-threshold swing are observed with the decrease of light ***, a negative bias illumination stress experiment is carried out. The degradation of the device is aggravated due to the decrease of recombination effects between ionized oxygen vacancies and free carriers. Moreover, the contributions of ionized oxygen vacancies and acceptor-like states are separated by using the mid-gap method. In addition, ionized oxygen vacancies are partially recombined at room temperature and fully recombined at high temperature. Finally, low-frequency noise is measured before and after negative bias illumination stress. Experimental results show few variations of the oxide trapped charges are generated during stress, which is consistent with the proposed mechanism.

关键词： indium-zinc oxide thin film transistor illumination low frequency noise

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Electromagnetic Pattem Extraction and Classification of Integrated Circuit under Different Operation State

Electromagnetic Pattem Extraction and Classification of Inte...

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Workshop on Electromagnetic Compatibility of Integrated Circuits (EMC Compo)

作者： Rongquan Chen Weiheng Shao Wenxiao Fang Meizhen Xiao Lei Wang Xinxin Tian Zhiyuan He Hengzhou Liu Xuecheng Xu Yulong Wang Hang Zhang Zeyi Li Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute (CEPREI) Guangzhou China

Extracting electromagnetic patterns by near field scanning can provide concrete information about a device under test (DUT), which benefits a lot when locating EMI sources. In this paper, we extracted the electromagnetic pattern of DUT under different operation state and classify the pattern with a machine learning algorithm for simplifying post-process procedure and better EMC engineering. The result showed different operation state lead to different electromagnetic emission.

关键词： Electromagnetic compatibility Electromagnetics Field programmable gate arrays Integrated circuit modeling Electromagnetic interference Standards

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