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14th IEEE Global reliability and Prognostics and Health Management Conference, PHM-Hangzhou 2023

作者： Zheng, Zhouyou Meng, Linghui Li, Xin Ruan, Bin Cui, Haotian School of Electrical and Information Engineering Anhui University of Science and Technology Anhui Huainan China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guang dong Guang zhou China School of Information Engineering Southwest University of Science and Technology Mianyang China

ISBN: (纸本)9798350301359

Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are gradually replacing silicon (Si)based devices as the core devices for power conversion in high-temperature, high-pressure, and high-frequency applications due to their superior material properties. The long-term reliability of SiC MOSFETs has become a research focus. Power cycling tests, an important aging test for evaluating device reliability, can reflect the reliability under real working conditions to some extent. The test is conducted using a constant on/off time mode, and the on-state resistance and body diode voltage drop of the devices are measured online during the aging test. The experimental results show that an increase in on-state resistance during power cycling tests causes an increase in junction temperature, which leads to wire bond aging and eventually results in SiC MOSFET failure. © 2023 IEEE.

关键词： failure mechanism junction temperature measurement power cycling test SiC MOSFET

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Degradation mechanism of 1310nm vertical cavity surface emission laser

Degradation mechanism of 1310nm vertical cavity surface emis...

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2023 Applied Optics and Photonics China: AI in Optics and Photonics, AOPC 2023

作者： Liao, Wenyuan Zhang, Jide Liu, Yuebo Li, Shuwang Yang, Shaohua Lai, Canxiong Lu, Guoguang Science and Technology on Reliability Physics and Application of Electronic Component Laboratory The Fifth Electronic Research Institute of the Ministry of Industry and Information Technology Guangzhou511370 China State Key Laboratory of High Power Semiconductor Laser Changchun University of Science and Technology Jilin Province Changchun130013 China

ISBN: (纸本)9781510672383

1310nm long-wavelength vertical-cavity surface-emitting lasers (VCSELs) have a wide application prospect in optical data transmission over long distances, in particular for hybrid integration with silicon photonics. With the wide application of 1310nm VCSEL, the reliability requirement is becoming more and more high. In this paper, the degradation mechanism of 1310nm VCSEL is studied by accelerated stress aging experiment. The device accelerates aging for 4000 hours at 8 mA, the maximum output power decreases by 0.04 mW, and the power saturation current and V-I curve remain basically unchanged. Leakage current of the device increases and reverse bias breakdown voltage decreases. Current noise power spectral density of the device is an order of magnitude higher than before aging. In addition, the device with degraded performance is characterized by optical emission microscopy. When the device is forward biased, dark spot defect is found on the edge of the light-emitting hole of the device after burnin. The internal topography of the device is characterized by FIB-SEM, and the oxide layer warpage is found. This is due to the increase of heat inside the device and the increase of stress in oxide layer, resulting in degradation of device's performance. © COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only.

关键词： Surface emitting lasers

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IC-LOGO: A Custom Dataset and Benchmark for Integrated Circuit Logo Detection Task

IC-LOGO: A Custom Dataset and Benchmark for Integrated Circu...

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IEEE International Conference on Artificial Intelligence and Computer applications (ICAICA)

作者： Yue Zhao Jun Luo Zhizhe Wang Qiuzhen Zhang Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China

ISBN: (数字)9798350377255

ISBN: (纸本)9798350377262

In order to enable computers to automatically detect the logo information of Integrated Circuit (IC) images and assist users in searching for the required IC manufacturer information based on the logo images, this article conducted research and analysis on the existing public datasets in the field of logo detection, and found that the existing public datasets cannot meet the specific research and application needs of this article. Therefore, the Integrated Circuit Logo (IC-LOGO) image dataset is presented in this article. The dataset contains 971 internal logo images from 17 manufacturers and 2091 external logo images from 30 manufacturers. Furthermore, the logo images were precisely positioned and annotated. Finally, a benchmark containing 8 different object detection networks was used to test the IC-LOGO dataset. The results show that all detectors trained on the dataset could detect the region and category of LOGO precisely and robustly.

关键词： Training Surveys Image recognition Computational modeling Object detection Benchmark testing Data models Software Robustness Integrated circuit modeling

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MEMS sensitive structure sand and dust pollution test and its degradation characteristics 14

MEMS sensitive structure sand and dust pollution test and it...

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14th International Conference on reliability, Maintainability and Safety, ICRMS 2023

作者： Ruan, Bin Zhu, Chunlong Liu, Tingting He, Chunhua Liu, Ruiwen Huang, Qinwen School of Information Engineering Southwest University of Science and Technology Mianyang China Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory China Electronic Product Reliability Environmental Testing Research Institute Guangzhou China School of Computer Guangdong University of Technology Guangzhou China Institute of Microelectronics Chinese Academy of Science Beijing China

ISBN: (纸本)9798350329988

The sensitive structures of certain devices containing micro-electromechanical system (MEMS) must be directly exposed to the working environment, making them vulnerable to contamination by dust and other pollutants in that environment. Consequently, this contamination degrades the performance of the device, impacting both its working life and stability. Existing test methods, such as GB/T 4208-2017 and GB/T 2423.37-2006, are not entirely suitable for evaluating the sand and dust contamination test of these MEMS devices. To address these issues, a thermistor-based test structure was designed and processed to develop an evaluation method suitable for testing the sand and dust contamination sensitive MEMS structures. The test results indicate that, unlike other hermetically sealed electronic devices, the imposition of electrical stress and cycling of the operating voltage "on-off" during the test does not increase dust accumulation. Furthermore, due to sand and dust contamination, the thermistor value of the device drifts during operation. This drift primarily arises from increased thermal resistance between the heating element of the device and the surrounding environment, resulting from the accumulation of sand and dust, which results in the increase of temperature of the heating element and ultimately results in an elevated thermistor value. This study can provide support for the structural design and package design of MEMS sensitive structures, and provide a basis for the identification and inspection of related products and the development of detailed specifications. © 2023 IEEE.

关键词： Thermistors

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A Single-Loop Narrow-Band Force Rebalance Control Method with Temperature Self-Compensation for a MEMS Gyroscope 38

A Single-Loop Narrow-Band Force Rebalance Control Method wit...

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38th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2025

作者： He, Chunhua Xu, Yingyu Wu, Heng Huang, Qinwen Zhao, Qiancheng Yan, Guizhen Guangdong University of Technology School of Computer China Ceprei Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory China Guangdong University of Technology School of Automation China Peking University School of Integrated Circuits Beijing China National Key Lab of Micro/Nano Fabrication Technology Beijing China

ISBN: (纸本)9798331508890

This paper presents a novel single-loop narrow-band force rebalance control method with temperature self-compensation for a MEMS gyroscope. The narrow-bandwidth force rebalance control for the sense mode is achieved using a simple bandpass filter (BPF) and without modulation or demodulation. The center frequency of the BPF is adjusted automatically to match the resonant frequency of the sense mode. Meanwhile, its gain is tuned based on the real-time quality factor of the sense mode. Experimental results demonstrate that the bias drift of the gyroscope with self-compensation is reduced from 1320 deg/h to 16 deg/h, while the scale factor drift is reduced from 0.616 mV/deg/s to 0.075 mV/deg/s. © 2025 IEEE.

关键词： Gyroscopes

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Non-destructive measurement of temperature in the micro-area wafer using Mueller matrix spectroscopic ellipsometry 8

Non-destructive measurement of temperature in the micro-area...

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8th International Workshop on Advanced Patterning Solutions, IWAPS 2024

作者： Sun, Qimeng Jin, Xing Ma, Bingxu Lei, Zhidan Liu, Xiaoli Peng, Jun Yang, Lin Calibration and Testing Center China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou510000 China The Test Center of Electronic Components China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou510000 China The Science and Technology on Reliability Physics Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou510000 China The Institute of Technological Sciences Wuhan University Wuhan430072 China

ISBN: (数字)9781510686335

ISBN: (纸本)9781510686328

As the number of 3D stacking layers continues to increase and the thermal design power of logic chips escalates, thermal management is confronted with unprecedented challenges. The temperature of the surface to be treated is also a parameter that is difficult to measure non-invasively. The standard technique is infrared (IR) pyrometry. However, due to the transparency of Si wafers in the IR spectrum, it cannot be used in the low-temperature regime (0℃ ~ 400℃). In this study, a new low-temperature thermal measurement method was developed, utilizing Mueller matrix spectroscopic ellipsometry (MMSE) combined with thermo-optical coefficients (TOC). Firstly, the coefficients of the Cauchy dispersion equation for Si-based SiO2 films were measured at different temperatures. The experimental results indicated that the refractive index of SiO2 films exhibits high sensitivity to temperature in the ultraviolet to visible spectra. Subsequently, MMSE was combined with deep learning to reverse characterize the temperature in the chip overlay region. The results indicated that effective Mueller matrix elements and multi-channel deep learning could accurately identify the temperature in the overlay region, with an accuracy of 99.81% and a recognition precision of 1K. The proposed method contributes to optimizing automatic process control, alleviating wafer deformation and overlay errors caused by thermal management, thereby enhancing the reliability of high-bandwidth memory. © 2024 SPIE.

关键词： Silicon wafers

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Simulation and experiment of microstrip lines temperature rise based on COMSOL Multiphysics 7

Simulation and experiment of microstrip lines temperature ri...

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7th IEEE International Symposium on Electromagnetic Compatibility, ISEMC 2023

作者： Huang, Lijuan Liao, Jinfu Fang, Wenxiao Wang, Jianying School of Electronic and Information Engineering South China Normal University Foshan China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China School of Integrated Circuit Sun Yat-Sen University Guangzhou China

ISBN: (纸本)9798350333107

Conductor loss and dielectric loss of the microstrip line can lead to temperature rise and limit the power capacity of the microstrip circuit. This involves the interaction (coupling) between the electric and temperature fields. In this study, the factors affecting the temperature rise of the microstrip line were analyzed by means of the parallel plate model. In addition, based on COMSOL Multiphysics simulation software, the influence of dielectric dissipation factor tanδ of microstrip lines of FR4 and RO4350B on the temperature rise per unit input power (TRPIP) was simulated. The simulation results under the set basic parameters show that the TRPIP of the strip conductors of the FR4-substrate microstrip lines with tanδ of 0.02 is about 4.8 °C, and that of RO450B-substrate microstrip lines with tanδ of 0.0037 is about 1.38 °C. Finally, in order to verify the simulation results, a non-invasive measuring device with an infrared camera was constructed to measure the heat distribution on the surface of the microstrip line. © 2023 IEEE.

关键词： Multiphysics

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A K/Ka-Band Frequency Reconfigurable GaN LNA for Multi-Band Communication applications

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Chinese Journal of electronics 2025年第3期34卷 739-748页

作者： Zeng Dingyuan Zhu Haoshen Gao Outong Cai Zongqi Che Wenquan Xue Quan Guangdong Provincial Key Laboratory of Millimeter-Wave and Terahertz School of Electronic and Information Engineering South China University of Technology Guangzhou 510641 China Guangdong-Hong Kong-Macao Joint Laboratory for Millimeter-Wave and Terahertz School of Electronic and Information Engineering South China University of Technology Guangzhou 510641 China Department of National Key Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou 510610 China

A frequency reconfigurable low noise amplifier (LNA) in a 0.15-μm gallium nitride (GaN) high-electron-mobility-transistor process is presented. The concept of frequency reconfiguration utilizing a switch-based reconfigurable resonator (SBRR) to adjust the resonant frequency and introduce a transmission zero in the lower out-of-band region is discussed. Additionally, a K/Ka-band frequency-reconfigurable LNA that incorporates the SBRR is designed and fabricated for validation. The proposed LNA features a small-signal gain of 13.9/8.9 dB and a noise figure of 2.4/3.2 dB at 21/30 GHz. The measured output power 1-dB compression point (OP1-dB) is 5.5/6.7 dBm at 21/30 GHz, respectively. The chip size is 1.5 × 1.75 mm2. The reconfigurable GaN LNA is attractive for future multi-band communication systems compatible for multiple standards.

关键词： Gallium nitride (GaN) Low noise amplifier (LNA) Monolithic microwave integrated circuit Reconfigurable Multi-band

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Impact of incident direction on neutron-induced single-bit and multiple-cell upsets in 14 nm FinFET and 65 nm planar SRAMs

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Chinese physics B 2022年第12期31卷 375-381页

作者： Shao-Hua Yang Zhan-Gang Zhang Zhi-Feng Lei Yun Huang Kai Xi Song-Lin Wang Tian-Jiao Liang Teng Tong Xiao-Hui Li Chao Peng Fu-Gen Wu Bin Li School of Physics and Optoeletronic Engineering Guangdong University of TechnologyGuangzhou 510006China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research InstituteGuangzhou 510370China Institute of Microelectronics of Chinese Academy of Sciences Beijing 100029China Institute of High Energy Physics Chinese Academy of SciencesBeijing 100049China Spallation Neutron Source Science Center Dongguan 523803China School of Microelectronics South China University of TechnologyGuangzhou 510640China

Based on the BL09 terminal of China Spallation Neutron Source(CSNS),single event upset(SEU)cross sections of14 nm fin field-effect transistor(FinFET)and 65 nm quad data rate(QDR)static random-access memories(SRAMs)are obtained under different incident directions of neutrons:front,back and *** is found that,for both technology nodes,the“worst direction”corresponds to the case that neutrons traverse package and metallization before reaching the sensitive *** SEU cross section under the worst direction is 1.7-4.7 times higher than those under other incident *** for multiple-cell upset(MCU)sensitivity,side incidence is the worst direction,with the highest MCU *** largest MCU for the 14 nm FinFET SRAM involves 8 ***-Carlo simulations are further performed to reveal the characteristics of neutron induced secondary ions and understand the inner mechanisms.

关键词： neutron fin field-effect transistor(FinFET) single event upset(SEU) Monte-Carlo simulation

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The study of parameters variation of nMOSFET affected by the HCI 14

The study of parameters variation of nMOSFET affected by the...

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14th IEEE International Conference on ASIC, ASICON 2021

作者： Xiaowen, Zhang Xiaoling, Lin Rui, Gao Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou510610 China

ISBN: (纸本)9781665411493

Hot Carrier injection (HCI) degradation is a critical issue for deep sup micro and nm technology. An Accelerated lifetime experiment is proposed in this paper to study the parameters degradation of nMOSFET induced by the HCI. A Device is considered to fail when a chosen device parameter changes by more than the specified failure criterion at worst use condition (typically VDDMAX= 1.1VDD) at a specified end of life. The results shows that the MTTF of HCI is depend on the parameter choose from. If the failure criteria is |ΔIds,sat/Ids,sat|=10%, then the MTTF has the maximum value. The model parameter m of Substrate/drain current ratio has been compared by using three stress conditions with single stress condition, it shows that the model parameter N obtained by single stress condition has low value. © 2021 IEEE.

关键词： Hot carriers

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