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检索条件"机构=2Science and Technology on Reliability Physics and Application of Electronic Component Laboratory"

共 450 条记录，以下是71-80 订阅

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Investigation of Trap States and Reverse Leakage in Fully-Vertical GaN Schottky Barrier Diodes with Laser Lift-Off Substrate

Investigation of Trap States and Reverse Leakage in Fully-Ve...

引用

International Symposium on Power Semiconductor Devices and Ics (ISPSD)

作者： Feng Zhou Wei Qi Teng Ma Can Zou Junfan Qian Weizong Xu Yiwang Wang Dong Zhou Fangfang Ren Dunjun Chen Rong Zhang Youdou Zheng Hai Lu School of Electronic Science and Engineering Nanjing University Nanjing China The Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China

ISBN: (数字)9798350394825

ISBN: (纸本)9798350394832

Lase lift-off (LLO) substrate technology is a promising solution for realizing fully vertical GaN devices based on foreign substrates. By performing deep-level transient spectroscopy (DLTS) experiments and temperature-dependent leakage current characterizations, this work investigates the trap states and leakage mechanisms of fully-vertical GaN Schottky barrier diodes (SBDs) based on LLO substrate, laser annealing and N-implantation termination. By fitting the DLTS spectral signal, the energy levels of the two electron trap states are determined to be $E_{C}$ - 0.6 e V and $E_{C}$ - 0.21 eV respectively, which should originate from the intrinsic traps in GaN epitaxy rather than being introduced by the LLO process. Furthermore, the leakage currents of the device are found to be dominated by Poole-Frenkel emission (PFE, < 35 V), variable range hopping (VRH, 35 ~ 100 V) and trap-assisted tunneling (TAT, > 100 V), respectively, as the bias voltage increases. These results provide important new insights into the implementation of laser lift-off technology in GaN-based power devices.

关键词： Performance evaluation Schottky diodes Electron traps Spectroscopy Annealing Semiconductor lasers Schottky barriers

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Study on the Mechanism of High Power Microwave Radiation Effect of GaN LNA

Study on the Mechanism of High Power Microwave Radiation Eff...

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International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications (MAPE)

作者： Min Liu Zongqi Cai Li'an Bian Anru Lv Houlu Tang Yiqiang Chen Guoguang Lu School of Physical and Electronic Science Changsha University of Science&Technology and CEPREI Guangzhou China The Science and Technology on Reliability Physics and Application of Electronic Component Laboratory CEPREI Guangzhou China

ISBN: (数字)9798331533922

ISBN: (纸本)9798331533939

In this paper, a high-power microwave resonant cavity is designed and used to build a high-power microwave radiation experimental system, and the high-power microwave radiation interference effect of GaN low-noise amplifier is studied. Unlike lots of previous papers whose research focuses on the high-power microwave injection damage effects of RF front-end devices, this paper proposes a simple high-power microwave radiation testing system, which can generate a high-power microwave radiation field of 100kV/m under continuous wave and pulse working conditions. The gain of GaN LNA decreases with the increase of high-power microwave radiation field strength, mainly due to the vertical high-power microwave radiation equal to the injection power to the input port of LNA, which causes saturation of the LNA, and reduces its linearity and amplification ability for weak signals. This experimental system greatly reduces the high cost, difficulty, and safety requirements of traditional high-power microwave effect systems. It has certain practical value for conducting high-power microwave radiation experiments on digital circuits such as MCU and FPGA, as well as analog circuit components such as limiters and amplifiers.

关键词： Microwave antennas Linearity Interference Microwave communication Microwave circuits Microwave amplifiers Safety Field programmable gate arrays Digital circuits Microwave propagation

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Study on Failure Mechanisms of SiC Power Devices Induced by Heavy Ion Irradiation

Study on Failure Mechanisms of SiC Power Devices Induced by ...

引用

International Conference on Radiation Effects of electronic Devices (ICREED)

作者： Chao Peng Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China

Radiation-induced degradations of SiC power JBS diodes and MOSFETs are investigated by 181 Ta ion irradiation. The failure mode characteristics and failure mechanism of SiC devices are studied through failure analysi...

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An Artificial Intelligence Near-Field Probe Calibration Method Based on Generative Adversarial Network

An Artificial Intelligence Near-Field Probe Calibration Meth...

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IEEE International Wireless Symposium (IWS)

作者： Shan Xue Yangyang Zhou Jiong Tang Yu Liu Weiheng Shao Duo-Long Wu Xinxin Tian Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China School of Physics and Optoelectronic Engineering Guangdong University of Technology Guangzhou China

ISBN: (数字)9798350389999

ISBN: (纸本)9798350390001

The near field scanning method specified in the international standard IEC-61967 is an important international diagnostic method for detecting electromagnetic compatibility problems. The near-field probe, as an important part of near-field scanning, mainly detects the magnetic field or electric field. The measurement accuracy of the near field probe directly affects the measurement accuracy of the electromagnetic field on the surface of the device, affecting the accuracy of electromagnetic compatibility diagnostics. To ensure measurement accuracy, it is essential to carry out near-field probe calibration. In this work, we proposed an artificial intelligence probe calibration method based on the generative adversarial networks, which helps improve the difference of calibration parts’ quality difference measurement field and eliminate the unnecessary influence field on the probe performance. Based on the proposed method, we effectively calibrate two kinds of electric field probes, which overcomes the problem of the difference of calibration parts’ quality difference measurement field, and eliminate the influence of unnecessary field to the probe performance.

关键词： Wireless communication Magnetic field measurement Accuracy Electric variables measurement Generative adversarial networks Electromagnetic compatibility Calibration Probes Electric fields Artificial intelligence

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Experimental Evaluation of Dynamic On-resistance and Switching Performance of Cascode GaN HEMTs 14

Experimental Evaluation of Dynamic On-resistance and Switchi...

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14th International Conference on reliability, Maintainability and Safety, ICRMS 2023

作者： Li, Yao He, Xuan He, Liang He, Zhiyuan Ni, Yiqiang Han, Xiaobiao Liu, Jun Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China Industry-Education-Research Institute of Advanced Materials and Technology for Integrated Circuits School of Electronics and Information Engineering Anhui University Hefei China School of Electrical Engineering University of South China Hengyang China

ISBN: (纸本)9798350329988

The dynamic on-resistance degradation and switching performance of a commercial 6S0 V cascode GaN power device are evaluated. A double-pulse test platform is used to investigate the dynamic on-resistance behaviors with various off-state drain bias voltages, drain currents, and off-state stress times under hard-switching conditions. To evaluate switching performance, an Si-based metal-oxide-semiconductor field-effect transistor (MOSFET) is used as a reference for comparing dynamic on-resistance and switching energy loss with cascode GaN high-electron-mobility transistors (HEMT). The test results indicate that higher off-state drain bias and drain current lead to more severe dynamic on-resistance degradation. Moreover, with a higher switching speed, the cascode GaN HEMT demonstrates a reduced switching energy loss compared to that of the Si-based MOSFET. © 2023 IEEE.

关键词： Gallium nitride

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Degradation Analysis of Double Trench-Gate SiC MOSFETs Under Single Surge Current Stress

Degradation Analysis of Double Trench-Gate SiC MOSFETs Under...

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International Conference on (ICEPT) electronic Packaging technology

作者： Mowen Zhang Qijun Wen Liang He Dezhi Ma Shuanzhu Fang Zhizheng Wang Zhiyuan He Jia-Yue Yang Yiqiang Chen Reliability Physics and Application of Electronic Component Laboratory School of Energy and Power Engineering Shandong University Science and Technology Jinan China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China School of Integrated Circuits Guangdong University of Technology Guangzhou China School of Energy and Power Engineering Shandong University Jinan China

ISBN: (数字)9798350353808

ISBN: (纸本)9798350353815

In this work, the degradation processes and mechanisms of commercial double trench gate SiC MOSFETs under single surge current (SSC) stresses are delved into. Based on comprehensive characterizations on device parameters before/after SSC stresses, we elucidate degradation behaviors exhibited by these MOSFETs. Notably, when SSC reaches the maximum value, the stability of the threshold voltage (Vth) and on-state resistance ( $R$ ds,on ) suggests that the gate oxide for these MOSFETs is not obviously influenced by SSC stresses. Additionally, scanning acoustic microscopy (SAM) analysis confirm the reliability of package. Through directly measuring the I-V characteristics of the body diode, the damage to body diode is identified as the primary cause of device failure, resulting the increase of the drain leakage current (Idss) and the loss in blocking capability. This work contributes usefully to the refinement of surge reliability assessment for SiC MOSFETs.

关键词： Degradation MOSFET Silicon carbide Current measurement Logic gates Loss measurement Threshold voltage

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Degradation Evaluation of Neutron Irradiation Effect on AlGaN/GaN Metal-Insulator- Semiconductor High Electron Mobility Transistors

Degradation Evaluation of Neutron Irradiation Effect on AlGa...

引用

International Conference on (ICEPT) electronic Packaging technology

作者： Xiaoyue Duan Pinbo Li Liang He Yijun Shi Xinghuan Chen Yiqiang Ni Jun Liu Zhiyuan He Yiqiang Chen Physics and Application of Electronic Component Laboratory School of Electrical Engineering University of South China Science and Technology on Reliability Hengyang China Physics and Application of Electronic Component Laboratory Science and Technology on Reliability Guangzhou China School of Electrical Engineering University of South China Hengyang China School of Integrated Circuits Guangdong University of Technology Guangzhou China

ISBN: (数字)9798350353808

ISBN: (纸本)9798350353815

We investigate the degradation effects of neutron irradiation on AIGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) in this work. The performance of the devices is characterized through relevant electrical current-voltage (I-V) test and capacitance- voltage (C-V) test. The result indicates that the electrical parameter of the device degrades after neutron irradiation, such as positive shift of threshold voltage, reduction in output drain current, and the increase of the on-resistance. Additionally, combining with the frequency-dependent conductance method, it displays that shallow energy level- interface states at the AIGaN/GaN heterojunction increase, along with slightly shifting to deeper energy level after neutron irradiation. Neutron irradiation introduces more interface states and increase the scattering which degrading the carrier concentration and mobility, causing related degradation on electrical performances. This study provides useful reference value for the application of GaN-based devices in the aerospace.

关键词： Degradation Performance evaluation Radiation effects Electron traps Neutrons Energy states Threshold voltage

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A New Probe with High Sensitivity and Dual components Measurement

A New Probe with High Sensitivity and Dual Components Measur...

引用

International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Lei Wang Rong Zhou Hongyue Wang Zhangming Zhu Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Electronic Product Reliability and Environmental Testing Research Institute GuangZhou China School of Microelectronics Xidian University Xi'an Shaanxi China

ISBN: (数字)9798350389968

ISBN: (纸本)9798350389975

A new electromagnetic probe with dual electromagnetic field components measurement and high detection sensitivity is presented in this work. It is well known that a traditional If-shaped loop probe is often utilized to simultaneously test two electric- and magnetic-field components. However, the If-shaped loop has an obvious drawback, which is that the electric-field sensitivity is much lower than the magnetic-field sensitivity. For the purpose of increasing the electric-field sensitivity, a pair of long strips is inserted into the V-shaped loop to increase the electric-field sensitivity in the presented probe. Moreover, some vias fences are used to prevent the undesired electromagnetic modes. For the purpose of verifying the outstanding feature of the probe, a simulated model is given and simulated on a four-layers PCB, and characterized by a standard microstrip line. By combining the long strips and If-shaped loop, the presented probe not only could measure two electric- and magnetic-field components at the same time, but also has a higher detection sensitivity, which could improve measurement accuracy and save measurement time.

关键词： Microwave measurement Strips Sensitivity Magnetic field measurement Millimeter wave measurements Electric variables measurement Time measurement

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Effect of the Off State/Half-On State/On State Electrical Stresses on the reliability of Packaged D-Mode GaN/AlGaN HEMTs

Effect of the Off State/Half-On State/On State Electrical St...

引用

International Conference on (ICEPT) electronic Packaging technology

作者： Dongsheng Zhao Lijuan Wu Yijun Shi Qingzong Xiao Guoguang Lu Zhiyuan He Liang He Zigui Tu Jie Yuan School of Physical and Electronic Changsha University of Science and Technology Changsha China Application of Electronic Component Laboratory CEPREI The Science and Technology on Reliability Physics Guangzhou China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China

ISBN: (数字)9798350353808

ISBN: (纸本)9798350353815

In this study, different typical electrical stresses (ES) were applied to the depletion mode GaN/AlGaN high electron mobility transistors (HEMTs) to simulate the application scenarios in real production and life. By applying three kinds of typical electrical stress, we observed the device static obvious changes in the electrical parameters are as follows: (1) Compared with the original device, the threshold voltage VTH of the device has obvious left drift, and the transconductance and Rds,on decrease under the Off State electrical stress; (2) Under the Half-On State/On State electrical stress, the threshold voltage of the device is positively skewed, the on-resistance Rds,on increases, and the saturation leakage current Idsat decreases significantly. The experiments reveal the dependence of threshold voltage (VTH), peak transconductance (Gmmax) and saturation leakage current (Idsat) on different stress modes, which provides an intentional reference for the quality and reliability of subsequent GaN/AlGaN HEMTs practical production applications.

关键词： Degradation Charge carriers Production HEMTs Threshold voltage Leakage currents MODFETs

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Fault Prediction of DC-DC Devices Based on Deep Belief Network

Fault Prediction of DC-DC Devices Based on Deep Belief Netwo...

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International Conference on Sensing, Diagnostics, Prognostics, and Control (SDPC)

作者： Pengfei Yu Jiao Wang Junliang Wan Qiang-ming Cai Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component Guangzhou China China Electronic Products Reliability and Environmental Test Institute Guangzhou China School of Information Engineering Southwest University of Science and Technology Mianyang China

ISBN: (数字)9798350388855

ISBN: (纸本)9798350388862

Fault prediction is an important research field for power supply status management. Choosing an appropriate algorithm has a significant impact on the effectiveness of prediction. This article uses Deep Belief Network (DBN) to predict the device efficiency degradation of an isolated flyback DC-DC converter. Deep Belief Network (DBN) can be seen as a stack of a series of Restricted Boltzmann Machines (RBMs). The final prediction error (RMSE) is 0.00039. The results indicate that DBN has a relatively small error in predicting device efficiency degradation in DC-DC devices. The advantage of DBN is that DBN can perform fault prediction on complex power systems without establishing a physical model. It is convenient to research fault prediction only based on mathematical models.

关键词： Degradation Performance evaluation Deep learning Accuracy Power supplies DC-DC power converters Predictive models Prediction algorithms Mathematical models Sensors

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