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Fluctuations in real population sizes: Mathematical modeling and estimation of demographic parameters

Ecological Modelling 2025年 507卷

作者： Revutskaya, Oksana Neverova, Galina Frisman, Efim Institute for Complex Analysis of Regional Problems Far East Branch Russian Academy of Sciences Sholom-Aleikhem St. 4 Birobidzhan 679016 Russia Institute of Automation and Control Processes Far Eastern Branch Russian Academy of Sciences Radio St. 5 Vladivostok 690041 Russia

This study proposes an approach for estimating the demographic parameters of stage structure of real populations on the basis of their total population size, providing a useful tool for managing species abundance dynamics. To estimate the parameters, we use a transformation from discrete-time two-component models of structured populations to delay-difference equations that depend on the total population size. The two-component model assumes that at the beginning of each breeding season, the population comprises two cohorts: a younger group of juveniles and an older group of mature individuals. Population growth is regulated either by constraining fertility or by limiting the juvenile survival. The proposed approach was tested using available data on the population dynamics of fur-bearing animals in the Jewish Autonomous Region of the Russian Far East. The analyzed species include the squirrel, mountain hare, Manchurian hare, raccoon dog, and Siberian weasel. Their offspring reach reproductive maturity by the next breeding season. The estimates obtained via the proposed approach generally fall within biologically meaningful parameter ranges and reflect population dynamics similar to those observed in nature. In summary, this approach enables the analysis and modeling of population stage structure, as well as the estimation of demographic coefficients using the total size data of the population. © 2025 Elsevier B.V.

关键词： Difference equations

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Molecular Design of -Substituted Curcuminoids of Boron Difluoride: Tuning Luminescence and Nonlinear Optical Properties, Bio-Imaging Applications

SSRN

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SSRN 2024年

作者： Fedorenko, Elena V. Mirochnik, Anatolii G. Gerasimenko, Andrey V. Lyubykh, Nikita A. Beloliptsev, Anton Yu. Mayor, Alexander Yu. Egorov, Anton E. Kostyukov, Alexey A. Burtsev, Ivan D. Nguyen, Tuan M. Shibaeva, Anna V. Markova, Alina A. Kuzmin, Vladimir A. Institute of Chemistry Far-Eastern Branch Russian Academy of Sciences 159 prosp. 100-letiya Vladivostoka Vladivostok690022 Russia Institute of Automation and Control Processes Far Eastern Branch Russian Academy of Sciences 5 Radio Street Vladivostok690041 Russia Emanuel Institute of Biochemical Physics Russian Academy of Sciences 4 Kosygina Street Moscow119334 Russia National Research Nuclear University MEPhI Kashirskoye shosse 1-31 Moscow115409 Russia

Boron diketonates are prospective fluorescent dyes for functional organic materials with enhanced two-photon absorption lead to new technologies in the fields of chemistry, photonics and photobiology. The new NIR-to-NIR luminofors – curcuminoids of boron difluoride with different substituents at the central carbon atom (at the g-position) of the chelate ring 2,2-difluoro-4,6-(р-dimethylaminostyryl)-5-organil-1,3,2-dioxaborines (1-5) were synthesized. Luminescence in solutions, crystals and polymer matrices, photobiological properties and NLO properties in polystyrene (PS) and polymethylmethacrylate (PMMA) were studied. The crystal structure has been determined for 1. For 1-5, in PS film, upon excitation by laser (365 nm), two luminescence bands are observed in the blue (÷430 nm) and red (650-700 nm) regions of the spectrum. For 1-5, two-photon luminescence is recorded in PS and PMMA films. PS 1 films demonstrate high photostability: when modifying films with femtosecond laser radiation with a wavelength of 800 nm, the intensity of two-photon fluorescence of PMMA 1 films decreased significantly, while PS 1 films increased by almost one and a half *** synthesized dyes turned out to be almost non-toxic for HCT116 tumor cells both in a long-term dark experiment (72 hours) and after photoexcitation in accordance with absorption maxima in the submicromolar concentration range. The compounds were rapidly accumulated by cells within 3 hours, demonstrating cytoplasmic distribution and the potential for use as cellular photoimaging agents. © 2024, The Authors. All rights reserved.

关键词： Laser excitation

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Extreme Softening of QCD Phase Transition under Weak Acceleration: First-Principles Monte Carlo Results for Gluon Plasma

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Physical Review Letters 2025年第11期134卷 111904-111904页

作者： M. N. Chernodub V. A. Goy A. V. Molochkov D. V. Stepanov A. S. Pochinok Institut Denis Poisson UMR 7013 Université de Tours 37200 Tours France Department of Physics West University of Timişoara Bd. Vasile Pârvan 4 Timişoara 300223 Romania Pacific Quantum Center Far Eastern Federal University 690922 Vladivostok Russia Institute of Automation and Control Processes Far Eastern Branch Russian Academy of Science 5 Radio Str. Vladivostok 690041 Russia Beijing Institute of Mathematical Sciences and Applications Tsinghua University 101408 Beijing China

We study the properties of gluon plasma subjected to a weak acceleration using first-principles numerical Monte Carlo simulations. We use the Luttinger (Tolman-Ehrenfest) correspondence between temperature gradient and gravitational field to impose acceleration in imaginary time formalism. Under acceleration, the system resides in global thermal equilibrium. Our results indicate that even the weakest acceleration up to a≃16 MeV drastically softens the deconfinement phase transition, converting the first-order phase transition of a static system to a soft crossover for accelerating gluons. The accelerating environment can be relevant to the first moments of the early Universe and the initial glasma regime of relativistic heavy ion collisions. In particular, our results imply that the acceleration, if present, may also inhibit the detection of the thermodynamic phase transition from quark-gluon plasma to the hadronic phase.

关键词： Heavy ions

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Simulation of gasification of solid porous fuel in a low-temperature gas generator of ramjet

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AIP Conference Proceedings 2023年第1期2504卷

作者： E. A. Salgansky N. A. Lutsenko L. S. Yanovskiy 1Institute of Problems of Chemical Physics Russian Academy of Sciences Chernogolovka Russia 2Institute of Automation and Control Processes Far Eastern Branch of the Russian Academy of Sciences Vladivostok Russia 3Far Eastern Federal University Vladivostok Russia 4Moscow Aviation Institute Moscow Russia

A low-temperature gas generator with a sequential arrangement of propellant and solid fuel for generating hydrocarbon gases is considered. The present work is devoted to the theoretical study of the regularities and mechanisms of gasification of solid porous fuel when hot gases with different fixed initial velocities pass through the fuel. The influence of the characteristics of solid fuel on the operating conditions of the gas generator has been investigated for polymethyl methacrylate, polyethylene, and hydroxyl-terminated polybutadiene. The shortest gas generator operation time is observed for polymethyl methacrylate and the longest for polyethylene. The maximum mass flow of polymethyl methacrylate gasification products is observed for the minimum initial gas velocity.

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Formation and thermoelectric properties of the n- And p-type silicon nanostructures with embedded GaSb nanocrystals

Formation and thermoelectric properties of the n- And p-type...

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作者： Goroshko, Dmitrii L. Chusovitin, Evgeniy A. Subbotin, Evgeniy Y. Chusovitina, Svetlana V. Balagan, Semeyon A. Galkin, Konstantin N. Dotsenko, Sergey A. Gutakovskii, Anton K. Khovaylo, Vladimir V. Nazarov, Vladimir U. Galkin, Nikolay G. Institute of Automation and Control Processes FEB RAS 5 Radio Street Vladivostok690041 Russia Far Eastern Federal University 10 Ajax Bay Russky Island Vladivostok Russia Institute of Semiconductor Physics of SB RAS 13 pr. Lavrentieva Novosibirsk630090 Russia National University of Science and Technology MISiS 4 Leninskiy pr. Moscow119049 Russia Research Center for Applied Sciences Academia Sinica Taipei11529 Taiwan

A silicon heterostructure with four layers of embedded gallium antimonide nanocrystals was formed on a Si(111) substrate by co-deposition of Ga and Sb using solid-phase epitaxy. Si(111)2 1-Sb surface reconstruction formed prior to the GaSb nanocrystal growth, which kept the nanocrystals from decomposition during the silicon epitaxial layer formation. P- and n-type structures were obtained using silicon of different conductivity types. In the 200-550 K temperature range they showed increases in both electrical conductivity and Seebeck coefficient compared with the bulk samples, which was explained by the peculiarities of the heterointerface band alignment and density of states at the Fermi level. The results open the way for creating multilayer structures with enhanced thermoelectric performance. © 2020 The Japan Society of Applied Physics.

关键词： Silicon

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Comparison of the structural, optical and thermoelectrical properties of Ca silicide films with variable composition on Si substrates 4th

Comparison of the structural, optical and thermoelectrical p...

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4th Asian School-Conference on Physics and Technology of Nanostructured Materials, ASCO-Nanomat 2018

作者： Galkin, Nikolay G. Galkin, Konstantin N. Chernev, Igor M. Goroshko, Dmitrii L. Chusovitin, Evgeniy A. Shevlyagin, Alexander V. Usenko, Andrei A. Khovailo, Vladimir V. Institute of Automation and Control Processes FEB RAS 5 Radio Street Vladivostok690041 Russia National University of Science and Technology 4 Leninsky Av. Moscow119049 Russia

ISBN: (纸本)9783035714777

The growth, structure, optical, electrical and thermoelectric properties of calcium silicides of various compositions on silicon substrates with (100) and (111) orientations were experimentally studied. It was found that when the atoms of Ca and Si are co-deposited on atomically clean silicon, the basis phases in the composition of the formed films depends on the substrate temperature and the annealing temperature: Ca2Si (TSi = 20oC, Tann = 330oC), CaSi (TSi = 190-320oC, Tann = 330°C) and CaSi2 (TSi = 500°C). It was established that the Ca2Si phase is a direct-gap semiconductor with a band gap of 0.82±0.02 eV, large contribution of defect levels to the absorption coefficient at energies 0.25 - 0.50 eV and huge transmission up 90% in the far IR region. In CaSi-based films the high transmission (30-40%) up to 25 μm was observed, which corresponds to a semimetal with a constant density of states near the Fermi level. It was found that CaSi-based films have the maximum Seebeck coefficient and the power factor (up to 430 μV/K and up to 1.14×10-6 W/(K2×m), respectively) at 330K. CaSi2 films with CaSi2 lattice stretching and epitaxial ordering relative to the Si(100) substrate exhibit semimetal properties, with very high conductivity and light transparency (up 12%) in the photon energy range 0.06 - 0.65 eV. © 2018 Trans Tech Publications, Switzerland

关键词： Silicides

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Static and dynamic sorption of free amines on surface of carbon nanotubes modified with nanolayers of polymer 4th

Static and dynamic sorption of free amines on surface of car...

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4th Asian School-Conference on Physics and Technology of Nanostructured Materials, ASCO-Nanomat 2018

作者： Galkina, Anna Sergeev, Alexander Leonov, Andrey Romashko, Roman Jiang, Jyh-Chiang Liaw, Der-Jang Institute of Automation and Control Processes FEB RAS 5 Radio St. Vladivostok690041 Russia Far Eastern Federal University 8 Sukhanova St. Vladivostok690950 Russia National Taiwan University of Science and Technology 43 Sec. 4 Keelung Rd. Taipei10607 Taiwan

ISBN: (纸本)9783035714777

In this work, we present a novel pyrene-functionalized benzoxazine (Py-BZ)/single-walled carbon nanotubes (SWNTs) complex material as an efficient luminescent chemosensor for gaseous amines. It is shown that an interaction of poly(Py-BZ)/SWCNTs nanocomposites with analyte vapor leads to the increase of the intensity of luminescence. The response of these sensors to methylamines by static and dynamic flow measurement were studied. © 2018 Trans Tech Publications, Switzerland

关键词： Chemosensor

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Thermoelectric properties of nanostructured material based on Si and GaSb 4th

Thermoelectric properties of nanostructured material based o...

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4th Asian School-Conference on Physics and Technology of Nanostructured Materials, ASCO-Nanomat 2018

作者： Goroshko, Dmitrii L. Subbotin, Evgeniy Y. Chusovitin, Evgeniy A. Balagan, Semeyon A. Galkin, Konstantin N. Dotsenko, Sergey A. Gutakovskii, Anton K. Khovaylo, Vladimir V. Usenko, Andrey A. Nazarov, Vladimir U. Galkin, Nikolay G. Institute of Automation and Control Processes FEB RAS 5 Radio St. Vladivostok690041 Russia Institute of Semiconductor Physics of SB RAS 13 pr. Lavrentieva Novosibirsk630090 Russia National University of Science and Technology "MISiS" 4 Leninskiy pr. Moscow119049 Russia Academia Sinica Research Center for Applied Sciences 128 Section 2 Academia Road Nangang Taipei11529 Taiwan

ISBN: (纸本)9783035714777

Successively forming GaSb islands by solid-phase epitaxy and covering them with a silicon layer, a nanostructured material containing 4 layers of GaSb nanocrystals (NCs) was grown on Si(111) surface. Due to a small size of the NCs (average height ~ 1.7 nm, average lateral size ~ 14 nm) and, as a consequence, to a significant quantum-size effect, a high electrical conductivity (~ 100 Ω-1·cm-1 at 600 K) together with a low thermal conductivity (~ 1 - 1.5 W·m-1·K-1 at 600 K) was obtained in the nanostructured material Si/NC_GaSb/Si. As a result, the thermoelectric figure of merit of the material has reached 0.82 at 600 K. © 2018 Trans Tech Publications, Switzerland

关键词： Silicon

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High-performance femtosecond laser fabrication of plasmon elements using DOE

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AIP Conference Proceedings 2017年第1期1874卷

作者： P. A. Danilov E. P. Litovko S. I. Kudryashov A. A. Kuchmizhak A. Porfirev O. B. Vitrik S. Ph. Umanskaya 1Lebedev Physical Institute 119991 Moscow Russia 2Moscow Institute of Physics and Technology (National University) 141701 Dolgoprudny Moscow region Russia 3ITMO University St. Peterburg 197101 Russia 5National Research Nuclear University MEPhI (Moscow Engineering Physics Institute) 115409 Moscow Russia 4Institute of Automation and Control Processes Far Eastern Branch Russian Academy of Science Vladivostok 690041 Russia 6Samara National Research University Moskovskoe shosse 34 Samara 443086 Russia

Broadband optically tunable diffractive optical elements (DOEs) were used to generate structured optical beams with considerably increased focal depth. Such beams were justified for high-performance ablative and translative printing of various plasmonic elements via high-efficiency multiplexing of femtosecond Gaussian-shaped laser beams to multiple micro-beams. The increased focal depth of such DOEs and easy-to-implement optical structuring of output beams as well as their high multiplexing efficiency make them very useful devices for high-performance laser fabrication of surface-enhanced infrared absorption sensors.

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Photoluminescence spectroscopy investigation of epitaxial Si/GaSb nanocrystals/Si heterostructure

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AIP Conference Proceedings 2017年第1期1874卷

作者： Dmitry L. Goroshko Alexander V. Shevlyagin Evgeniy A. Chusovitin Sergey A. Dotsenko Anton K. Gutakovskii M. Iinuma Y. Terai Evgeniy Yu. Subbotin Nikolay G. Galkin 1Institute of Automation and Control Processes FEB RAS 5 Radio St. 690041 Vladivostok Russia 2Far Eastern Federal University 8 Sukhanova St. 690950 Vladivostok Russia 3Rzhanov Institute of Semiconductor Physics SB RAS Lavrentieva Ave.13 Novosibirsk Russia 4Kyushu Institute of Technology Department of Computer Science and Electronics 680-4 Kawazu Iizuka Fukuoka 820-8502 Japan

Two-layer heterostructure with GaSb nanocrystals formed by solid phase epitaxy and embedded into the silicon was investigated using low-temperature (10-140 K) photoluminescence and time-resolved photoluminescence spectroscopies. Two characteristic luminescence bands with a maximum of about 0.82 and 0.87 eV were observed. It was found that low-energy peak is associated with D1 dislocation-related luminescence in silicon. Analysis of the decay components together with temperature and power dependencies of the photoluminescence for the high-energy maximum revealed that emission is more likely originated from the combined D2 dislocation centers in silicon and radiative recombination in type–II band alignment Si/GaSb nanocrystals/Si heterostructure. A nonradiative recombination dominates in all temperature range studied.

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