Neural networks(NNs), owing to their impressive performance, have gradually begun to dominate multimedia processing. For resource-constrained and energy-sensitive mobile devices, an efficient NN accelerator is necessa...
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Neural networks(NNs), owing to their impressive performance, have gradually begun to dominate multimedia processing. For resource-constrained and energy-sensitive mobile devices, an efficient NN accelerator is necessary. Style transfer is an important multimedia application. However, existing arbitrary style transfer networks are complex and not well supported by current NN accelerators, limiting their application on mobile devices. Moreover, the quality of style transfer needs improvement. Thus, we design the Fast Style system(FSS), where a novel algorithm and an NN accelerator are proposed for style transfer. In FSS, we first propose a novel arbitrary style transfer algorithm, Fast Style. We propose a light network that contributes to high quality and low computational complexity and a prior mechanism to avoid retraining when the style changes. Then, we redesign an NN accelerator for Fast Style by applying two improvements to the basic NVIDIA deep learning accelerator(NVDLA) architecture. First, a flexible dat FSM and wt FSM are redesigned to enable the original data path to perform other operations(including the GRAM operation)by software programming. Moreover, statistics and judgment logic are designed to utilize the continuity of a video stream and remove the data dependency in the instance normalization, which improves the accelerator performance by 18.6%. The experimental results demonstrate that the proposed Fast Style can achieve higher quality with a lower computational cost, making it more suitable for mobile devices. The proposed NN accelerator is implemented on the Xilinx VCU118 FPGA under a 180-MHz clock. Experimental results show that the accelerator can stylize 512×512-pixel video with 20 FPS, and the measured performance reaches up to 306.07 GOPS. The asic implementation in TSMC 28 nm achieves about 22 FPS in the case of a 720-p video.
We proposed a low-complexity multi-input multi-output neural network integrated with a maximum likelihood phase recovery algorithm (MIMO-NN-BMLPR), which is adopted in long-haul coherent optical communication. Neural ...
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On the basis of novel properties of ferroelectric conducting domain walls,the domain wall nanoelectronics emerges and provides a brand-new dimension for the development of high-density,high-speed and energy-efficient ...
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On the basis of novel properties of ferroelectric conducting domain walls,the domain wall nanoelectronics emerges and provides a brand-new dimension for the development of high-density,high-speed and energy-efficient *** in-memory computing,three-terminal devices with both logic and memory functions such as transistors purely based on ferroelectric domain walls are urgently ***,a prototype ferroelectric domain-wall transistor with a well-designed coplanar electrode geometry is demonstrated on epitaxial Bi Fe O_(3)thin *** the logic function,the current switching between on/off states of the transistor depends on the creation or elimination of conducting domain walls between drain and source *** the data storage,the transistor can maintain nonvolatile on/off states after the write/erase operations,providing an innovative approach for the development of the domain wall nanoelectronics.
The advancement of terahertz (THz) communication technology drives the evolution of wireless communication systems,offering novel pathways and technical means for the development of future 6G communication *** wireles...
The advancement of terahertz (THz) communication technology drives the evolution of wireless communication systems,offering novel pathways and technical means for the development of future 6G communication *** wireless communication systems are often constrained by bandwidth limitations of electronic devices in high frequency ***,THz communication technology leverages the characteristics of electromagnetic waves to transcend these limitations,enabling communication athigher frequencies and wider bandwidths.
Ferroelectric domain walls appear as sub-nanometer-thick topological interfaces separating two adjacent domains in different orientations,and can be repetitively created,erased,and moved during programming into differ...
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Ferroelectric domain walls appear as sub-nanometer-thick topological interfaces separating two adjacent domains in different orientations,and can be repetitively created,erased,and moved during programming into different logic states for the nonvolatile memory under an applied electric field,providing a new paradigm for highly miniaturized low-energy electronic *** some specific conditions,the charged domain walls are conducting,differing from their insulating bulk *** the past decade,the emergence of atomic-layer scaling solid-state electronic devices is such demonstration,resulting in the rapid rise of domain wall *** review aims to the latest development of ferroelectric domain-wall memories with the presence of the challenges and opportunities and the roadmap to their future commercialization.
The analog front-end (AFE) circuit of the light detection and ranging (LiDAR) receivers need to provide time-of-flight (ToF) when the laser echo arrives. Accurate ToF is crucial for the ranging accuracy of LiDAR recei...
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This paper proposes a multi-sampling mode capacitor DAC (CDAC) for a 12-bit 200MS/s pipelined-SAR ADC, addressing the issue of overfitting in neural network-based calibrations. By implementing normal, offset, and prop...
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The ring amplifier is an energy effective choice for high performance pipeline ADC. However, sensitivity to process, supply voltage and temperature (PVT) variations and complex stability mechanism make it less practic...
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The unique features of ambipolar two-dimensional materials open up a great opportunity to build gate-programmable devices for reconfigurable circuit applications,e.g.,PN junctions for rectifier ***,current-reported re...
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The unique features of ambipolar two-dimensional materials open up a great opportunity to build gate-programmable devices for reconfigurable circuit applications,e.g.,PN junctions for rectifier ***,current-reported rectifier circuits usually consist of one gate-programmable PN junction as the rectifier and one resistor as the load,which are not conductive to voltage output and large-scale *** we propose an approach of complementary gate-programmable PN junctions to assemble reconfigurable rectifier circuit,which include two symmetric back-to-back black phosphorus(BP)/hexagonal boron nitride(h-BN)/graphene heterostructured semi-gate field-effect transistors(FETs)and perform complementary NP and PN junction like complementary metal-oxide-semiconductor(CMOS)*** investigation exhibits that the circuit can effectively reconfigure the circuit with/without rectifying ability,and can process alternating current(AC)signals with the frequency prior 1 KHz and reconfiguration speed up to 25μ*** also achieve the reconfigurable rectifier circuit memory via complementary semi-floating gate FETs *** complementary configuration here should be of low output impedance and low static power consumption,being beneficial for effective voltage output and large-scale integration.
It is significant to develop a heterogeneous integration technology to promote the application of two-dimensional(2D)materials in silicon roadmap. In this paper, we reported a field-effect WSe_(2)/Si heterojunction di...
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It is significant to develop a heterogeneous integration technology to promote the application of two-dimensional(2D)materials in silicon roadmap. In this paper, we reported a field-effect WSe_(2)/Si heterojunction diode based on ambipolar 2D WSe_(2) and silicon on insulator(SOI). Our results indicate that the device exhibits a p–n diode behavior with a rectifying ratio of ~300 and an ideality factor of 1.37. As a photodetector, it has optoelectronic properties with a response time of 0.13 ms, responsivity of 0.045 A/W, detectivity of 4.5×10~(10) Jones and external quantum efficiency(EQE) of 8.9 %.Due to the ambipolar behavior of the WSe_(2), the rectifying and optoelectronic properties of the heterojunction diode can be modulated by the gate electrical field, enabling various potential applications such as logic optoelectronic devices and neuromorphic optoelectronic devices for in-sensor computing circuits. Thanks to the process based on the mature SOI technique, our field-effect heterojunction diode should have obvious advantages in device isolation and integration.
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