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5th IEEE International Conference on Artificial Intelligence Circuits and systems, AICAS 2023

作者： Xu, Fa Liu, Zihao Lu, Yanheng Li, Sicheng Xu, Susong Fan, Yibo Chen, Yen-Kuang Fudan University State Key Laboratory of Asic & System Shanghai200433 China Alibaba Group China

ISBN: (纸本)9798350332674

Images and videos are vital visual information carriers, and the image signal processor (ISP) is an essential hardware component for capturing and processing these visual signals. ISPs convert raw data into high-quality color images, which requires various function modules to control different aspects of image quality. However, the results of these modules are interdependent and have crosstalk with each other, making it tedious and time-consuming for manual tuning to obtain a set of ideal parameter configurations to achieve stable performance. In this paper, we introduce xkISP, a self-developed open-source ISP project which includes both a C model and hardware implementation of an 8-stage ISP pipeline. Most importantly, we present a novel proxy function-based AI-assisted ISP tuning solution that is demonstrated to accelerate the ISP parameter configuration process and improve performance for both human vision and computer vision tasks. © 2023 IEEE.

关键词： Tuning

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Recent progress on two-dimensional ferroelectrics:Material systems and device applications

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Chinese Physics B 2023年第12期32卷 40-53页

作者：范芷薇渠靖媛王涛温滟安子文姜琦涛薛武红周鹏许小红 Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education and School of Chemistry and Materials Science Shanxi Normal UniversityTaiyuan 030031China State Key Laboratory of ASIC&System School of MicroelectronicsFudan UniversityShanghai 200433China

Ferroelectrics are a type of material with a polar structure and their polarization direction can be inverted reversibly by applying an electric *** have attracted tremendous attention for their extensive applications in non-volatile memory,sensors and neuromorphic ***,conventional ferroelectric materials face insulating and interfacial issues in the commercialization *** contrast,two-dimensional(2D)ferroelectric materials usually have excellent semiconductor performance,clean van der Waals interfaces and robust ferroelectric order in atom-thick layers,and hold greater promise for constructing multifunctional ferroelectric optoelectronic devices and nondestructive ultra-high-density ***,2D ferroelectrics have obtained impressive breakthroughs,showing overwhelming ***,firstly,the progress of experimental research on 2D ferroelectric materials is ***,the preparation of 2D ferroelectric devices and their applications are ***,the future development trend of 2D ferroelectrics is looked at.

关键词： two-dimensional materials ferroelectrics device applications

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CO_(2) reduction with coin catalyst

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Nano Research 2022年第5期15卷 3859-3865页

作者： Taishi Xiao Can Tang Hongbin Li Tong Ye Kun Ba Peng Gong Zhengzong Sun Department of Chemistry and Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials Fudan UniversityShanghai 200433China School of Microelectronics and State Key Laboratory of ASIC and System Fudan UniversityShanghai 200433China

Most organic commodity chemicals are derived from fossil carbon *** dependency is so immense that it is difficult to compensate for the accompanying carbon footprint with current technology and chemical *** mitigate the future fossil fuel usage,it is crucial to explore alternative chemical pathways,which are both sustainable and suitable for large-scale *** we demonstrate a closed-loop carbon-neutral chemical route,using standard coin catalyst,to produce high concentrated formate and formic *** catalyst's Faradaic efficiency(FE)of formate is~95.3% with great *** chemicals are not only synthesized but also purified and utilized in zero-carbon *** successfully harvested 45%formate salt and 86.2% formic acid,for applications like anti-freezing reagent and green liquid fuel to power the fuel-cell vehicles.

关键词： closed-loop lifecycle electrocatalysis coin catalyst

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Surface plasmon assisted high-performance photodetectors based on hybrid TiO_(2)@GaO_(x)N_(y)-Ag heterostructure

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Journal of Semiconductors 2023年第7期44卷 45-53页

作者： Jiajia Tao Guang Zeng Xiaoxi Li Yang Gu Wenjun Liu David Wei Zhang Hongliang Lu State Key Laboratory of ASIC and System Shanghai Institute of Intelligent Electronics&SystemsSchool of MicroelectronicsFudan Univer-sityShanghai 200433China Jiashan Fudan Institute Jiaxing 314100China

In this work,we reported a high-performance-based ultraviolet-visible(UV-VIS)photodetector based on a TiO_(2)@GaO_(x)N_(y)-Ag *** particles were introduced into TiO_(2)@GaO_(x)N_(y)to enhance the visible light detection perfor-mance of the heterojunction *** 380 nm,the responsivity and detectivity of TiO_(2)@GaO_(x)N_(y)-Ag were 0.94 A/W and 4.79×109 Jones,respectively,and they increased to 2.86 A/W and 7.96×1010 Jones at 580 *** rise and fall times of the response were 0.19/0.23 and 0.50/0.57 s,***,at 580 nm,the responsivity of fabricated devices is one to four orders of magnitude higher than that of the photodetectors based on TiO_(2),Ga_(2)O_(3),and other *** excellent optoelectronic characteristics of the TiO_(2)@GaO_(x)N_(y)-Ag heterojunction device could be mainly attributed to the synergistic effect of the type-Ⅱband structure of the metal-semiconductor-metal heterojunction and the plasmon resonance effect of Ag,which not only effectively promotes the separation of photogenerated carriers but also reduces the recombination *** is fur-ther illuminated by finite difference time domain method(FDTD)simulation and photoelectric *** TiO_(2)@GaO_(x)N_(y)-Ag arrays with high-efficiency detection are suitable candidates for applications in energy-saving communica-tion,imaging,and sensing networks.

关键词： TiO_(2)@GaO_(x)N_(y)-Ag ultraviolet-visible photodetector type-Ⅱband structure plasmon resonance effect

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Thermal engineering in ALD-grown ZGO thin films for high-performance photodetectors

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材料科学技术（英文版） 2025年第6期209卷 19-26页

作者： Si-Tong Ding Yu-Chang Chen Cai-Yu Shi Lei Shen Qiu-Jun Yu Lang-Xi Ou Ze-Yu Gu Na Chen Ting-Yun Wang David Wei Zhang Hong-Liang Lu State Key Laboratory of ASIC and System Shanghai Institute of Intelligent Electronics & SystemsSchool of MicroelectronicsFudan UniversityShanghai 200433China Zhangjiang Fudan International Innovation Center Shanghai 201203China National Integrated Circuit Innovation Center Shanghai 201203China Key Laboratory of Specialty Fiber Optics and Optical Access Networks Shanghai Institute Communication and Data ScienceShanghai UniversityShanghai 200444China State Key Laboratory of ASIC and System Shanghai Institute of Intelligent Electronics & SystemsSchool of MicroelectronicsFudan UniversityShanghai 200433China Zhangjiang Fudan International Innovation Center Shanghai 201203China National Integrated Circuit Innovation Center Shanghai 201203China Jiashan Fudan Institute Jiaxing 314100China

Doped gallium oxide-based thin films are a class of wide-band semiconductor materials with the ad-vantages of chemically stable,tunable bandgap,and offer the benefit of ultraviolet *** order to obtain photodetectors(PDs)with superior response,higher demands are placed on the quality of growth and processing of doped *** this work,Zn-doped ternary metal oxide ZnGaO(ZGO)thin films were grown using the atomic layer deposition technique and annealed at different temperatures under an oxy-gen *** results showed that the high-quality ZGO films with good uniformity,high visible light transmittance,low roughness,and significant reduction of oxygen vacancies were obtained after ***,metal-semiconductor-metal PDs were prepared based on the studied ZGO *** responsivity(R),detectivity(D*),and external quantum efficiency(EQE)of the optimized device are 61.8 A W-1,1.2 x 1012 Jones,and 255.9％,*** to the unannealed device,the an-nealed ZGO PD achieves a maximum 309-fold increase in *** thermal engineering work may provide a strong reference for the development of low-cost,large-area,high-performance ultraviolet *** it also broadens the application of ternary metal oxides in optoelectronics.

关键词： Atomic layer deposition Oxygen annealing ZGO thin films Photodetector Ultraviolet detection

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Broadband hollow-core NANF transmission utilizing optimal carrier phase estimation for probabilistic shaping constellation

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Chinese Optics Letters 2025年第2期23卷 25-30页

作者： Chen Wang Jianyu Long Bohan Sang Bowen Zhu Peng Li Kaihui Wang Wen Zhou Lei Shen Jianjun Yu State Key Laboratory of ASIC and System udan UuniversityShanghai 20043 China Yangze Optial Fiber and Cable(YOFC) Wuhan 430073China

In this Letter, we provide a novel maximum a posteriori probability detection-based decision-directed carrier phase estimation(MAP-DDCPE) algorithm. The introduced probability-aware maximum a posteriori probability(MAP) detection avoids the decision errors brought by an ununiform probability distribution, which enhances the phase-tracking ability for the probabilistic shaping(PS) signals. With the proposed MAP-DDCPE, we experimentally demonstrate the 96-channel transmission that delivers 40-GBaud polarization division multiplexing(PDM) PS-64-ary quadrature amplitude modulation(64QAM) signals over the 2-km nested anti-resonant nodeless fiber(NANF). We believe the PS-assisted broadband NANF transmission enabled by the MAP-DDCPE is a promising solution for large-capacity optical communication.

关键词： anti-resonant hollow-core fiber probabilistic shaping technology carrier phase estimation wavelength division multiplexing.

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Defect physics of the quasi-two-dimensional photovoltaic semiconductor GeSe

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Chinese Physics B 2022年第11期31卷 60-66页

作者： Saichao Yan Jinchen Wei Shanshan Wang Menglin Huang Yu-Ning Wu Shiyou Chen Key Laboratory of Polar Materials and Devices(MOE)and Department of Electronics East China Normal UniversityShanghai 200241China State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 200433China

GeSe has recently emerged as a photovoltaic absorber material due to its attractive optical and electrical properties as well as earth abundancy and low ***,the efficiency of GeSe thin-film solar cells(TFSCs)is still low compared to the Shockley–Queisser *** defects are believed to play important roles in the electrical and optical properties of GeSe thin ***,we perform first-principles calculations to study the defect characteristics of *** results demonstrate that no matter under the Ge-rich or Se-rich condition,the Fermi level is always located near the valence band edge,leading to the p-type conductivity of undoped *** Se-rich condition,the Ge vacancy(V_(Ge))has the lowest formation energy,with a(0/2–)charge-state transition level at 0.22 eV above the valence band *** high density(above 10^(17)cm^(-3))and shallow level of VGeimply that it is the p-type origin of *** Se-rich growth condition,Seihas a low formation energy in the neutral state,but it does not introduce any defect level in the band gap,suggesting that it neither contributes to electrical conductivity nor induces non-radiative *** addition,Gei introduces a deep charge-state transition level,making it a possible recombination ***,we propose that the Se-rich condition should be adopted to fabricate high-efficiency GeSe solar cells.

关键词： GeSe bulk point defect concentration photovoltaic

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2-DOF MIMO Decoupling Control of the Gantry High Performance Motion system 5

2-DOF MIMO Decoupling Control of the Gantry High Performance...

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5th International Conference on Mechatronics and Computer Technology Engineering, MCTE 2022

作者： Zhang, Yang Ding, Chenyang Liu, Weike Guo, Liang State Key Laboratory of ASIC and System Fudan University Shanghai China

ISBN: (纸本)9781510661073

The gantry high performance motion system is widely used in many high-precision servo motion scenarios. In this paper, a two-degree-of-freedom MIMO decoupling control strategy is proposed. In this strategy, a MIMO decoupling matrix is designed in a targeted manner, and a two-degree-of-freedom control structure composed of acceleration feedforward and closed-loop feedback control is used to suppress various disturbances, and then the motion coordination control of the motion stage is carried out from a global perspective. Finally, the effectiveness of the control strategy is verified by the actual test of the fourth-order setpoint trajectory tracking, and the performance is compared with the general cross-coupling control strategy. The results show that the root mean square value of the tracking error and the maximum absolute value of the tracking error in the combined test of the X, Y direction and the YX axis of the gantry high performance motion system have been effectively improved. © 2022 SPIE.

关键词： MIMO systems

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An Order-Reduced Memory Polynomial Behavioral Model for RF Power Amplifier 7

An Order-Reduced Memory Polynomial Behavioral Model for RF P...

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7th International Conference on Integrated Circuits and Microsystems, ICICM 2022

作者： Hua, Di Wang, Tao Shi, Lingyun Hong, Zhiliang Fudan University State Key Laboratory of ASIC and System Shanghai China

ISBN: (纸本)9781665460439

This paper presents a behavioral model of order-reduced memory polynomial (ORMP) for digital predistortion (DPD) in RF power amplifiers. After iterative training with Greedy-Search method and Model-Growth technique, the proposed ORMP model with additional crossing terms achieves better predistortion performance and lower complexity compared with other DPD techniques. The effectiveness of the proposed model is verified by the measurement results of a switched capacitor power amplifier (SCPA). For LTE 10MHz64 QAM PAPR S.4dB signal, the EVM is improved by 6. 144dB and the ACPR is improved by 6. 189dB. For LTE 20MHz64 QAM PAPR 8. 4dB signal, the EVM and ACPR are improved by 4. 723dB and 2. 542dB respectively. © 2022 IEEE.

关键词： Peak to average power ratio

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Forming-free flexible memristor with multilevel storage for neuromorphic computing by full PVD technique

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Journal of Materials Science & Technology 2021年第1期60卷 21-26页

作者： Tian-Yu Wang Jia-Lin Meng Qing-Xuan Li Lin Chen Hao Zhu Qing-Qing Sun Shi-Jin Ding David Wei Zhang State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 200433China

Flexible resistive random access memory(RRAM) has shown great potential in wearable *** tunable multilevel resistance states,flexible memristors could be used to mimic the bio-synapses for constructing high-efficient wearable neuromorphic computing ***,the flexible substrate has intrinsic disadvantages including low-tempe rature tolerance and poor complementary metal-oxidesemiconductor(CMOS) compatibility,which limit the development of flexible *** physical vapor deposition(PVD) fabrication process could prepare RRAM without requirement of further treatment,which greatly simplified preparation steps and reduced the production *** the other hand,forming process,as a common pre-programing operation in RRAM,increases the energy consumption and limits the application scenarios of ***,a NiO-based forming-free RRAM with low set voltage was fabricated via full PVD *** flexible device exhibited reliable re sistive switching characteristics under flat state even compre s sive and tensile states(R=10 mm).The tunable multilevel resistance states(5 levels) could be obtained by controlling the compliance ***,synaptic plasticities also were verified in this *** flexible NiO-based RRAM shows great potential in wearable forming-free multibit memo ry and neuromorphic computing electronics.

关键词： Full PVD process Flexible memristor Forming-free Multilevel storage Neuromorphic application

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